Pre-Buried Additive for Cross-Layer Modification in Flexible Perovskite Solar Cells with Efficiency Exceeding 22.

Halide perovskites have shown superior potentials in flexible photovoltaics due to their soft and high power-to-weight nature. However, interfacial residual stress and lattice mismatch due to the large deformation of flexible substrates have greatly limited the performance of flexible perovskite solar cells (F-PSCs). Here, ammonium formate (HCOONH4 ) is used as a pre-buried additive in electron transport layer (ETL) to realize a bottom-up infiltration process for an in situ, integral modification of ETL, perovskite layer, and their interface. The HCOONH4 treatment leads to an enhanced electron extraction in ETL, relaxed residual strain and micro-strain in perovskite film, along with reduced defect densities within these layers. As a result, a top power conversion efficiency of 22.37% and a certified 21.9% on F-PSCs are achieved, representing the highest performance reported so far. This work links the critical connection between multilayer mechanics/defect profiles of ETL-perovskite structure and device performance, thus providing meaningful scientific direction to further narrowing the efficiency gap between F-PSCs and rigid-substrate counterparts.

Morphology Tuning and Its Role in Optimization of Perovskite Films Fabricated from A Novel Nonhalide Lead Source.

Usage of nonhalide lead sources for fabricating perovskite solar cells (PSCs) has recently attracted increasing attention as a promising route toward realizing high quality PSC devices. However, the unique role of nonhalide lead sources in improving perovskite film morphology and PSC performance has largely remained unexplored, impeding broader application of these materials. Here, it is demonstrated that by using a new nonhalide lead source, lead formate (Pb(HCOO)2), good control of perovskite film morphology can be achieved. With the usage of lead formate, PbI2 can nicely border the perovskite grain boundaries (GBs) and form domain "walls" that segregate the individual perovskite crystal domains. The PbI2 at the GBs lead to significant improvement in film quality and device performance through passivating the defects at the perovskite GBs and suppressing lateral carrier diffusion. An impressive carrier lifetime at the microsecond scale (τ 2 = 1714 ns) is achieved, further with an optimal power conversion efficiency of 20.3% for the resulting devices. This work demonstrates a promising and effective method toward fabricating high-quality perovskites and high-efficiency PSCs.