High-beam-quality low-resistance vertical-cavity surface-emitting laser array with graphene electrode.

Thermal crosstalk and current crowding effects are pressing issues that significantly impact the beam quality and efficiency of vertical-cavity surface-emitting laser (VCSEL) arrays. In this paper, by taking advantage of the excellent current transmission characteristics of graphene, what we believe to be a novel VCSEL array based on graphene electrode is designed to realize vertical current injections. The series resistance and self-heating of arrays are reduced by controlling the transport direction of the current, effectively suppressing the thermal crosstalk effect. Furthermore, high array beam quality is obtained by optimizing the current density distribution in active regions. Ultimately, the high-power quasi-single mode emission of VCSEL arrays is achieved by introducing graphene electrodes (Gr-VCSEL array) designs. Compared to traditional VCSEL arrays, the 10 × 10 Gr-VCSEL array demonstrates a 41% reduction in series resistance, a side mode suppression ratio of 32 dB, and a divergence angle around 12 °. This structure simultaneously achieves quasi-single mode emission and effectively suppresses the thermal crosstalk effect, providing a new method for the development of high-beam quality VCSEL arrays.

A synapse with low power consumption based on MoTe2/SnS2heterostructure.

The use of two-dimensional materials and van der Waals heterostructures holds great potential for improving the performance of memristors Here, we present SnS2/MoTe2heterostructure synaptic transistors. Benefiting from the ultra-low dark current of the heterojunction, the power consumption of the synapse is only 19pJ per switching under 0.1 V bias, comparable to that of biological synapses. The synaptic device based on the SnS2/MoTe2demonstrates various synaptic functionalities, including short-term plasticity, long-term plasticity, and paired-pulse facilitation. In particular, the synaptic weight of the excitatory postsynaptic current can reach 109.8%. In addition, the controllability of the long-term potentiation and long-term depression are discussed. The dynamic range (Gmax/Gmin) and the symmetricity values of the synaptic devices are approximately 16.22 and 6.37, and the non-linearity is 1.79. Our study provides the possibility for the application of 2D material synaptic devices in the field of low-power information storage.

High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel.

Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.

Highly efficient and ultracompact InP/InGaAsP three-port trench-based couplers.

Existing photonic couplers are limited by either large footprint or long interaction length. Here a highly efficient and ultracompact three-port trench-based coupler (TBC) is proposed on an InP platform in terms of the frustrated total internal reflection principle. A single slash-shaped narrow trench located at the "T" intersection of two InP/InGaAsP multiquantum well ridge waveguides forms the coupler. The finite-difference time-domain numerical method is utilized to optimize the parameterization of the couplers, such as splitting ratios and efficiency versus trench widths, lengths, locations, and angles. A single-mode 2 µm wide ridge waveguide coupler having a high aspect ratio trench filled with Al2O3 was fabricated and characterized at 1.55 µm wavelength. The "trench-first" fabrication process is optimized to reduce its inherent insertion loss (IL), showing the IL within a range of 0.3-0.5 dB. The devices can outperform the state-of-the-art trench couplers by ≥∼24 times the figure of merit. These TBCs are thus promising candidates for applications in the next generation of photonic integrated circuits.

Compact InGaAsP/InP 3 × 3 multimode-interference coupler-based electro-optic switch.

Optical switches are key components in data links for optical communication networks requiring low crosstalk and insertion loss, high switching speed, and power efficiency. A multimode-interference (MMI)-coupler-based switch with multiple inputs and outputs serving as a switching unit is desired toward forming a large-scale switch matrix. Here we demonstrate a compact 3×3 MMI coupler electro-optic switch based on the carrier injection effect on InGaAsP/InP substrates. This switch device is 2780 µm long by 18 µm wide. The switching states can be controlled by two index-modulation regions through applied bias voltages. Our simulation results show that the device exhibits low crosstalk of <-22 dB, high extinction ratio of ≳23 dB, low electrical switching energy of ∼2.0 pJ/bit, maximum operational frequency of ∼1.0 GHz, and optical bandwidth of ∼20 nm in the C band. We experimentally validated one of the switching states on a fabricated device with maximum current injections of ∼25 mA under combined bias voltages of ∼2.5 and ∼3.0 V. Such monolithic integration schemes make them an ideal candidate for future on-chip photonic integrated circuits.

Fabrication of Efficient and Simple-Structured Perovskite Solar Cells Using a Multifunctional Biocolina Surface Treatment.

The electron transport layer (ETL)-free perovskite solar cells (PSCs) have gained significant interest by simplifying the manufacture process and reducing the time/energy required for the fabrication of ETLs. Unfortunately, the performance of these ETL-free PSCs still lags behind those of the conventional counterparts due to the slow electron extraction and undesired interfacial charge recombination loss at the buried interface. In this work, a facile and multifunctional biocolina thin layer is incorporated on the bottom electrodes to regulate the interface energy level alignment by forming an interface dipole layer, resulting in a suppressed nonradiative recombination and an improved charge extraction. Furthermore, the biocolina thin layer possess the capability to passivate the surface defects within the perovskite films while simultaneously facilitate the formation of perovskite crystals. Consequently, a remarkable enhancement in photovoltaic performance is observed in the biocolina-based ETL-free PSCs with an increase from 15.96 % to an outstanding 20.01 %. Additionally, the biocolina extends the stability and relieves the hysteresis effect through the interface defect passivation and inhibition of interface charge accumulation. This research contributes to the development of cost-effective, simplified designs for highly efficient ETL-free PSCs by modifying the bottom electrodes.

Multifunctional Self-Assembled Ionic Liquid Modified Rigid and Flexible Substrates for Efficient Simple-Structured Perovskite Solar Cells.

The advancement of electron transport layer (ETL)-free perovskite solar cells (PSCs) is crucial for the commercialization of PSCs. At present, the slow electron extraction and significant carrier recombination, related to the energy-level alignment at the FTO/perovskite interface, restrict the performance of ETL-free PSCs. The facile modification of bottom electrodes is pivotal for tackling these issues and stimulating the photovoltaic potential of perovskite. Herein, a cost-competitive and neoteric 1-hydroxyethyl-3-methylimidazolium chloride, [HOEtMIM]Cl, ionic liquid is employed to modify the surface of rigid and flexible electrodes, and thus enable an energetically well-aligned interface with perovskite layer via the electric dipole effects. The resulting barrier-free FTO/perovskite contact can tremendously ameliorate the electron extraction and collection, with mitigated nonradiative interfacial carrier recombination loss. Additionally, the lone pair on the nitrogen of the imidazole group passivates the surface defects of perovskite layers, and the chloride anion plays a role in the crystallinity improvement of perovskite. Leveraged by the [HOEtMIM]Cl modification, the resulting ETL-free rigid and flexible devices deliver an outstanding power conversion efficiency of 19.60 % and 15.57 %, along with the ameliorated hysteresis and long-term tenability. This finding highlights the drastic potential of the engineered [HOEtMIM]Cl in manufacturing stable and high-performance ETL-free PSCs for their scaled-up production.

Surface Vertical Multi-Emission Laser with Distributed Bragg Reflector Feedback from CsPbI3 Quantum Dots.

Quantum dots (QDs) laser has become an important way to solve micro-application problems in many fields. However, single wavelength distributed Bragg reflector (DBR) has many limitations in practical applications, such as signal transmission. How to realize multiwavelength DBR lasing output simply is a challenge. To achieve a stable multi-wavelength quantum dots laser in the near-infrared region, the perovskite CsPbI3 QDs laser with DBR structure is developed in this paper. A tetragonal crystal structure with complete bonding information and no defect is explained by X-ray diffractions (XRD) and Raman spectrum. The cross-section morphology of the DBR laser and the surface morphology of QDs is measured by scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. An elliptical light propagation field and a double wavelength laser radiation are obtained from the finite-difference time-domain (FDTD) simulation. The output of the three wavelength lasers at 770 nm, 823 nm, and 873 nm is measured. The emission time of a DBR laser is about 2 h, and the average fluorescence quantum yield is 60%. The cavity length selection and energy level model are put in place to clearly see the working mechanism. All the results suggest that an effective and stable CsPbI3 quantum dots DBR laser is realized.

Intrinsically Stretchable and Conductive Textile by a Scalable Process for Elastic Wearable Electronics.

The prosperous development of stretchable electronics poses a great demand on stretchable conductive materials that could maintain their electrical conductivity under tensile strain. Previously reported strategies to obtain stretchable conductors usually involve complex structure-fabricating processes or utilization of high-cost nanomaterials. It remains a great challenge to produce stretchable and conductive materials via a scalable and cost-effective process. Herein, a large-scalable pyrolysis strategy is developed for the fabrication of intrinsically stretchable and conductive textile in utilizing low-cost and mass-produced weft-knitted textiles as raw materials. Due to the intrinsic stretchability of the weft-knitted structure and the excellent mechanical and electrical properties of the as-obtained carbonized fibers, the obtained flexible and durable textile could sustain tensile strains up to 125% while keeping a stable electrical conductivity (as shown by a Modal-based textile), thus ensuring its applications in elastic electronics. For demonstration purposes, stretchable supercapacitors and wearable thermal-therapy devices that showed stable performance with the loading of tensile strains have been fabricated. Considering the simplicity and large scalability of the process, the low-cost and mass production of the raw materials, and the superior performances of the as-obtained elastic and conductive textile, this strategy would contribute to the development and industrial production of wearable electronics.

Hierarchical Graphene Foam for Efficient Omnidirectional Solar-Thermal Energy Conversion.

Efficient solar-thermal energy conversion is essential for the harvesting and transformation of abundant solar energy, leading to the exploration and design of efficient solar-thermal materials. Carbon-based materials, especially graphene, have the advantages of broadband absorption and excellent photothermal properties, and hold promise for solar-thermal energy conversion. However, to date, graphene-based solar-thermal materials with superior omnidirectional light harvesting performances remain elusive. Herein, hierarchical graphene foam (h-G foam) with continuous porosity grown via plasma-enhanced chemical vapor deposition is reported, showing dramatic enhancement of broadband and omnidirectional absorption of sunlight, which thereby can enable a considerable elevation of temperature. Used as a heating material, the external solar-thermal energy conversion efficiency of the h-G foam impressively reaches up to ≈93.4%, and the solar-vapor conversion efficiency exceeds 90% for seawater desalination with high endurance.