RESUMEN
The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic x-ray scattering. From configuration-interaction cluster-model calculations, the line shapes of the Mn L3 resonant inelastic x-ray scattering spectra can be explained by d-d excitations from the Mn ground state dominated by charge-transferred states, in which hole carriers are bound to the Mn impurities, rather than a pure acceptor Mn2+ ground state. Unlike archetypical d-d excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the d-d excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through the hybridization of the Mn 3d orbital with the ligand band.
RESUMEN
The magnetic properties of as-grown Ga1-xMnxAs have been investigated by the systematic measurements of temperature and magnetic field dependent soft x-ray magnetic circular dichroism (XMCD). The intrinsic XMCD intensity at high temperatures obeys the Curie-Weiss law, but a residual spin magnetic moment appears already around 100 K, significantly above the Curie temperature (T_{C}), suggesting that short-range ferromagnetic correlations are developed above T_{C}. The present results also suggest that the antiferromagnetic interaction between the substitutional and interstitial Mn (Mn_{int}) ions exists and that the amount of the Mn_{int} affects T_{C}.
RESUMEN
We developed a 1.5-microm band TM-mode waveguide optical isolator that makes use of the nonreciprocal-loss phenomenon. The device was designed to operate in a single mode and consists of an InGaAlAs/InP ridge-waveguide optical amplifier covered with a ferromagnetic MnAs layer. The combination of the optical waveguide and the magnetized ferromagnetic metal layer produces a magneto-optic effect called the nonreciprocal-loss phenomenon--a phenomenon in which the propagation loss of light is larger in backward propagation than it is in forward propagation. We propose the guiding design principle for the structure of the device and determine the optimized structure with the aid of electromagnetic simulation using the finite-difference method. On the basis of the results, we fabricated a prototype device and evaluated its operation. The device showed an isolation ratio of 7.2 dB/mm at a wavelength from 1.53 to 1.55 microm. Our waveguide isolator can be monolithically integrated with other waveguide-based optical devices on an InP substrate.
RESUMEN
Electron paramagnetic resonance spectrum with C(3V) symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si(C)). The spin S = 1/2 and the observation of the defect only in p-type material suggest that the Si(C) is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si(C)(+) center indicates a considerable lattice relaxation in the vicinity of the defect.