RESUMEN
Intercalation has proven to be a powerful strategy for physical and chemical property modulation in two dimensional (2D) van der Waals (vdW) materials. Traditional gaseous and chemical intercalation methods offer the ability for mass production, and the electrochemical method provides reversible fine tuning for in situ material investigation. Spatial control, or even direct patterning, of ions is widely required for practical device fabrication and integration; yet it is not realized. Here we demonstrate a self-driven ion (Co2+, Sn4+, and Cu2+) intercalation approach with patterning ability on vdW α-MoO3. It is proved that the self-driven intercalation was enabled by the formation of a local galvanic cell and could be controlled by the metal electrode potential and the solution concentration. The universality of self-intercalation was confirmed in various types of 2D materials (MoS2, WS2, MoSe2, WSe2 and graphene). Furthermore, the feasibility of building heterostructures by multiple species (Sn & Co) intercalation in a single nanosheet was demonstrated for broadband photodetection. The enhancement of conductivity and photoresponse was found to be due to the synergistic effect of lattice distortion from Sn intercalation and the d orbital from the Co atom. This approach offers a feasible way for direct nano-fabrication in 2D vdW material and functional device integration.
RESUMEN
Defects engineering can broaden the absorption band of wide band gap van der Waals (vdW) materials to the visible or near-IR regime at the expense of material stability and photoresponse speed. Herein, we introduce an atomic intercalation method that brings the wide band gap vdW α-MoO3 for vis-MIR broadband optoelectronic conversion. We confirm experimentally that intercalation significantly enhances photoabsorption and electrical conductivity buts effects negligible change to the lattice structure as compared with ion intercalation. Charge transfer from the Sn atom to the lattices induces an optoelectrical change. As a result, the Sn-intercalated α-MoO3 shows room temperature, air stable, broadband photodetection ability from 405 nm to 10 µm, with photoresponsivity better than 9.0 A W-1 in 405-1500 nm, â¼0.4 A W-1 at 3700 nm, and 0.16 A W-1 at 10 µm, response time of â¼0.1 s, and peak D* of 7.3 × 107 cm Hz0.5 W-1 at 520 nm. We further reveal that photothermal effect dominates in our detection range by real-time photothermal-electrical measurement, and the materials show a high temperature coefficient of resistance value of -1.658% K-1 at 300 K. These results provide feasible route for designing broadband absorption materials for photoelectrical, photothermal, or thermal-electrical application.
RESUMEN
A transparent and flexible film heater was fabricated; based on a hybrid structure of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) and silver nanowires (Ag NWs) using a screen printing; which is a scalable production technology. The resulting film integrates the advantages of the two conductive materials; easy film-forming and strong adhesion to the substrate of the polymer PEDOT:PSS; and high conductivity of the Ag NWs. The fabricated composite films with different NW densities exhibited the transmittance within the range from 82.3% to 74.1% at 550 nm. By applying 40 V potential on the films; a stable temperature from 49 °C to 99 °C was generated within 30 s to 50 s. However; the surface temperature of the pristine PEDOT:PSS film did not increase compared to the room temperature. The composite film with the transmittance of 74.1% could be heated to the temperatures from 41 °C to 99 °C at the driven voltages from 15 V to 40 V; indicating that the film heater exhibited uniform heating and rapid thermal response. Therefore; the PEDOT:PSS/Ag NW composite film is a promising candidate for the application of the transparent and large-scale film heaters.