Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering.

Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an Al sputtering target and N2 as the reactive gas. The N2 working gas flow rate was varied among 20, 30, and 40 sccm to optimize the AlN thin film growth. The optimal AlN thin film was produced with 40 sccm N2 flow at 500 W under 100% N2 gas and at 600 °C. The films were studied using X-ray diffraction and had (002) phase orientation. X-ray photoelectron spectroscopy was used to determine the atomic content of the optimal film to be Al, 32%; N, 52%; and O, 12% at 100 nm beneath the surface of the thin film. The film was also investigated through atomic force microscopy and had a root mean square roughness of 2.57 nm and a hardness of 76.21 GPa. Finally, in situ continual sputtering was used to produce a gallium nitride (GaN) layer on Si with the AlN thin film as a buffer layer. The AlN thin films investigated in this study have excellent material properties, and the proposed process could be a less expensive method of growing high-quality GaN thin films for various applications in GaN-based power transistors and Si integrated circuits.

One-pot synthesis of cobalt complexes with 2,6-bis(arylimino)phenoxyl/phenthioxyl ligands and catalysis on isoprene polymerization.

Several cobalt complexes supported by 2,6-bis(arylimino)phenoxyl/phenthioxyl ligands κ2N,X-Ar[NXN]CoCl(THF) (1a, X = O, Ar = 2,6-Me2C6H3; 1b, X = O, Ar = 2,6-iPr2C6H3; 2a, X = S, Ar = 2,6-Me2C6H3; 2b, X = S, Ar = 2,6-iPr2C6H3) were synthesized by direct oxygen(sulfur) insertion into the C-Co bond of the mixed-valence cobalt complexes {κ2C,N,η6-Ar[NCN]Co-κN-CoCl(µ-Cl)}2. Crystallization of 1b in the presence of water gave the hydrolysis product 1b'. Treatment of Ar[NCN]Li with dioxygen followed by the addition of CoCl2 afforded the heteroatomic complexes {κ2N,O-Ar[NON]Co(µ-Cl)2Li}2 (3a, Ar = 2,6-Me2C6H3; 3b, Ar = 2,6-iPr2C6H3) or κ2N,O-Ar[NON]Co2Cl2(µ-Cl)2Li(THF)2 (4a, Ar = 2,6-Me2C6H3; 4b, Ar = 2,6-iPr2C6H3) depending on the amount of CoCl2 used. The Co(iii)/Li heterometallic complex 3b' with imino-phenoxyl-amino ligands was formed probably via a redox reaction of 3b. The reactions of Ar[NCN]Li with elemental sulfur and CoCl2 gave κ2N,S-Ar[NSN]Co2Cl2(µ-Cl)2Li(THF)2 (5a, Ar = 2,6-Me2C6H3; 5b, Ar = 2,6-iPr2C6H3) respectively. These complexes were well characterized by FT-IR and elemental analyses, and the molecular structures of 1b', 3b', 4a, and 4b were confirmed by X-ray crystallography. Upon activation with Al2Et3Cl3 in toluene, these complexes showed high activities in isoprene polymerization affording cis-1,4 enriched polymers with a moderate molecular weight (0.85-4.72 × 104 Da).

Bis(imino)aryl NCN pincer cobalt complexes: synthesis and disproportionation.

Treatment of iPr[NCN]Br (2,6-(2,6-iPr2C6H3C[double bond, length as m-dash]N)2C6H3Br) with nBuLi in THF and the subsequent addition of 1 equiv. of CoCl2, CoCl2(Ph3P)2, and CoBr2 gave pincer Co(ii) complexes {iPr[NCN]Co(µ-Cl)}2 (1d), iPr[NCN]CoClPh3P (1d-Ph3P), and iPr[NCN]CoBr2·Li(THF)4 (1d-LiBr) respectively in moderate yields, whereas the slow addition of in situ prepared iPr[NCN]Li to CoCl2 in THF afforded an unexpected mixed-valence cobalt(i/ii) complex κ2C,N,η6-iPr[NCN]Co-κN-CoCl3·Li(THF)4 (2d). Complex 2d was probably formed via a disproportionation reaction of the iPr[NCN]Co(ii) species with excess CoCl2 during the reaction. Nevertheless, addition of CoCl2 to in situ formed 1d-THF at room temperature did not lead to 2d but gave a trinuclear Co(ii) complex {iPr[NCN]Co(µ-Cl)(µ-Br/Cl)}2Co (1d-CoCl2) in moderate yield. Similar reactions using ligands containing small ortho groups in the imine moieties R[NCN]Br (2,6-(2,6-Me2C6H3C[double bond, length as m-dash]N)2C6H3Br, Me[NCN]Br; 2,6-(2,6-Et2C6H3C[double bond, length as m-dash]N)2C6H3Br, Et[NCN]Br; 2,6-(2,4,6-Me3C6H2C[double bond, length as m-dash]N)2C6H3Br, Mes[NCN]Br) and CoBr2, regardless of the reactant addition sequence, afforded mixed-valence cobalt(i/ii) complexes {κ2C,N,η6-R[NCN]Co-κN-CoBr(µ-Br)}2 (Me[NCN] (2a), Et[NCN] (2b), and Mes[NCN] (2c)), suggesting that the bulkiness of the ortho-groups in the imine moieties of the ligands plays an important role in the disproportionation reaction. In the presence of PMe3, Co(ii) complexes κ2C,N-R[NCN]CoBr(PMe3)2 (3a-d) and a bisligated cobalt(ii) complex κ3N,C,N-κ2C,N-iPr[NCN]2CoPMe3 (4d) can be prepared respectively in high yields. The molecular structures of 1d-LiBr, 1d-CoCl2, 2b, 2d, 3a, and 4d were confirmed by X-ray crystallographic analysis and the detailed mechanisms of the disproportionation reaction were proposed.

Study on biomass circulation and gasification performance in a clapboard-type internal circulating fluidized bed gasifier.

We investigated the solid particle flow characteristics and biomass gasification in a clapboard-type internal circulating fluidized bed reactor. The effect of fluidization velocity on particle circulation rate and pressure distribution in the bed showed that fluidization velocities in the high and low velocity zones were the main operational parameters controlling particle circulation. The maximum internal circulation rates in the low velocity zone came almost within the range of velocities in the high velocity zone, when u(H)/u(mf)=2.2-2.4 for rice husk and u(H)/u(mf)=3.5-4.5 for quartz sand. In the gasification experiment, the air equivalence ratio (ER) was the main controlling parameter. Rice husk gasification gas had a maximum heating value of around 5000 kJ/m(3) when ER=0.22-0.26, and sawdust gasification gas reached around 6000-6500 kJ/m(3) when ER=0.175-0.24. The gasification efficiency of rice husk reached a maximum of 77% at ER=0.28, while the gasification efficiency of sawdust reached a maximum of 81% at ER=0.25.