Ferroelectricity-Driven Phonon Berry Curvature and Nonlinear Phonon Hall Transports.

Berry curvature (BC) governs topological phases of matter and generates anomalous transport. When a magnetic field is applied, phonons can acquire BC indirectly through spin-lattice coupling, leading to a linear phonon Hall effect. Here, we show that polar lattice distortion directly couples to a phonon BC dipole, which causes a switchable nonlinear phonon Hall effect. In a SnS monolayer, the in-plane ferroelectricity induces a phonon BC and leads to the phononic version of the nonvolatile BC memory effect. As a new type of ferroelectricity-phonon coupling, the phonon Rashba effect emerges and opens a mass gap in tilted Weyl phonon modes, resulting in a large phonon BC dipole. Furthermore, our ab initio non-equilibrium molecular dynamics simulations reveal that nonlinear phonon Hall transport occurs in a controllable manner via ferroelectric switching. The ferroelectricity-driven phonon BC and corresponding nonlinear phonon transports provide a novel scheme for constructing topological phononic transport/memory devices.

Data-Driven Enhancement of ZT in SnSe-Based Thermoelectric Systems.

Doping and alloying are fundamental strategies to improve the thermoelectric performance of bare materials. However, identifying outstanding elements and compositions for the development of high-performance thermoelectric materials is challenging. In this study, we present a data-driven approach to improve the thermoelectric performance of SnSe compounds with various doping. Based on the newly generated experimental and computational dataset, we built highly accurate predictive models of thermoelectric properties of doped SnSe compounds. A well-designed feature vector consisting of the chemical properties of a single atom and the electronic structures of a solid plays a key role in achieving accurate predictions for unknown doping elements. Using the machine learning predictive models and calculated map of the solubility limit for each dopant, we rapidly screened high-dimensional material spaces of doped SnSe and evaluated their thermoelectric properties. This data-driven search provided overall strategies to optimize and improve the thermoelectric properties of doped SnSe compounds. In particular, we identified five dopant candidate elements (Ge, Pb, Y, Cd, and As) that provided a high ZT exceeding 2.0 and proposed a design principle for improving the ZT by Sn vacancies depending on the doping elements. Based on the search, we proposed yttrium as a new high-ZT dopant for SnSe with experimental confirmations. Our research is expected to lead to novel high-ZT thermoelectric material candidates and provide cutting-edge research strategies for materials design and extraction of design principles through data-driven research.

Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal.

Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2-2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m-1 K-1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te.

Thermoelectric materials with high average power factor and thermoelectric figure of merit (ZT) has been a sought-after goal. Here, we report new n-type thermoelectric system CuxPbSe0.99Te0.01 (x = 0.0025, 0.004, and 0.005) exhibiting record-high average ZT ∼ 1.3 over 400-773 K ever reported for n-type polycrystalline materials including the state-of-the-art PbTe. We concurrently alloy Te to the PbSe lattice and introduce excess Cu to its interstitial voids. Their resulting strong attraction facilitates charge transfer from Cu atoms to the crystal matrix significantly. It follows the increased carrier concentration without damaging its mobility and the consequently improved electrical conductivity. This interaction also increases effective mass of electron in the conduction band according to DFT calculations, thereby raising the magnitude of Seebeck coefficient without diminishing electrical conductivity. Resultantly, Cu0.005PbSe0.99Te0.01 attains an exceptionally high average power factor of ∼27 µW cm-1 K-2 from 400 to 773 K with a maximum of ∼30 µW cm-1 K-2 at 300 K, the highest among all n- and p-type PbSe-based materials. Its ∼23 µW cm-1 K-2 at 773 K is even higher than ∼21 µW cm-1 K-2 of the state-of-the-art n-type PbTe. Interstitial Cu atoms induce the formation of coherent nanostructures. They are highly mobile, displacing Pb atoms from the ideal octahedral center and severely distorting the local microstructure. This significantly depresses lattice thermal conductivity to ∼0.2 Wm-1 K-1 at 773 K below the theoretical lower bound. The multiple effects of the dual incorporation of Cu and Te synergistically boosts a ZT of Cu0.005PbSe0.99Te0.01 to ∼1.7 at 773 K.

Mixed Sulfur and Iodide-Based Lead-Free Perovskite Solar Cells.

The use of divalent chalcogenides and monovalent halides as anions in a perovskite structure allows the introduction of 3+ and 4+ charged cations in the place of the 2+ metal cations. Herein we report for the first time on the fabrication of solar cells exploiting methylammonium antimony sulfur diiodide (MASbSI2) perovskite structures, as light harvesters. The MASbSI2 was prepared by annealing under mild temperature conditions, via a sequential reaction between antimony trisulfide (Sb2S3), which is deposited by the chemical bath deposition (CBD) method, antimony triiodide (SbI3), and methylammonium iodide (MAI) onto a mesoporous TiO2 electrode, and then annealed at 150 °C in an argon atmosphere. The solar cells fabricated using MASbSI2 exhibited power conversion efficiencies (PCE) of 3.08%, under the standard illumination conditions of 100 mW/cm2.

High-Performance n-Type PbSe-Cu2Se Thermoelectrics through Conduction Band Engineering and Phonon Softening.

From a structural and economic perspective, tellurium-free PbSe can be an attractive alternative to its more expensive isostructural analogue of PbTe for intermediate temperature power generation. Here we report that PbSe0.998Br0.002-2%Cu2Se exhibits record high peak ZT 1.8 at 723 K and average ZT 1.1 between 300 and 823 K to date for all previously reported n- and p-type PbSe-based materials as well as tellurium-free n-type polycrystalline materials. These even rival the highest reported values for n-type PbTe-based materials. Cu2Se doping not only enhance charge transport properties but also depress thermal conductivity of n-type PbSe. It flattens the edge of the conduction band of PbSe, increases the effective mass of charge carriers, and enlarges the energy band gap, which collectively improve the Seebeck coefficient markedly. This is the first example of manipulating the electronic conduction band to enhance the thermoelectric properties of n-type PbSe. Concurrently, Cu2Se increases the carrier concentration with nearly no loss in carrier mobility, even increasing the electrical conductivity above ∼423 K. The resulting power factor is ultrahigh, reaching ∼21-26 µW cm-1 K-2 over a wide range of temperature from ∼423 to 723 K. Cu2Se doping substantially reduces the lattice thermal conductivity to ∼0.4 W m-1 K-1 at 773 K, approaching its theoretical amorphous limit. According to first-principles calculations, the achieved ultralow value can be attributed to remarkable acoustic phonon softening at the low-frequency region.

Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites.

The Rashba effect is spin degeneracy lift originated from spin-orbit coupling under inversion symmetry breaking and has been intensively studied for spintronics applications. However, easily implementable methods and corresponding materials for directional controls of Rashba splitting are still lacking. Here, we propose organic-inorganic hybrid metal halide perovskites as 3D Rashba systems driven by bulk ferroelectricity. In these materials, it is shown that the helical direction of the angular momentum texture in the Rashba band can be controlled by external electric fields via ferroelectric switching. Our tight-binding analysis and first-principles calculations indicate that S = 1/2 and J = 1/2 Rashba bands directly coupled to ferroelectric polarization emerge at the valence and conduction band edges, respectively. The coexistence of two contrasting Rashba bands having different compositions of the spin and orbital angular momentum is a distinctive feature of these materials. With recent experimental evidence for the ferroelectric response, the halide perovskites will be, to our knowledge, the first practical realization of the ferroelectric-coupled Rashba effect, suggesting novel applications to spintronic devices.

Extraordinary Off-Stoichiometric Bismuth Telluride for Enhanced n-Type Thermoelectric Power Factor.

Thermoelectrics directly converts waste heat into electricity and is considered a promising means of sustainable energy generation. While most of the recent advances in the enhancement of the thermoelectric figure of merit (ZT) resulted from a decrease in lattice thermal conductivity by nanostructuring, there have been very few attempts to enhance electrical transport properties, i.e., the power factor. Here we use nanochemistry to stabilize bulk bismuth telluride (Bi2Te3) that violates phase equilibrium, namely, phase-pure n-type K0.06Bi2Te3.18. Incorporated potassium and tellurium in Bi2Te3 far exceed their solubility limit, inducing simultaneous increase in the electrical conductivity and the Seebeck coefficient along with decrease in the thermal conductivity. Consequently, a high power factor of ∼43 µW cm-1 K-2 and a high ZT > 1.1 at 323 K are achieved. Our current synthetic method can be used to produce a new family of materials with novel physical and chemical characteristics for various applications.

Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4.

Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers.

Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm(2)/(V s). This material possesses an extremely large anisotropy, Γ = ρ(c)/ρ(ab) ≈ 10(4), comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O(6+δ). The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 10(6) m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties.

Crystal Growth, Structures, and Properties of the Complex Borides, LaOs2Al2B and La2Os2AlB2.

Single crystals of two novel quaternary metal borides, LaOs2Al2B and La2Os2AlB2, have been grown from La/Ni eutectic fluxes. LaOs2Al2B crystallizes in tetragonal space group P4/mmm with the CeCr2Si2C-type structure, and lattice parameters a = 4.2075(6) Å and c = 5.634(1) Å. La2Os2AlB2 exhibits a new crystal structure in monoclinic space group C2/c with lattice parameters a = 16.629(3) Å, b = 6.048(1) Å, c = 10.393(2) Å, and ß = 113.96(3)°. Both structures are three-dimensional frameworks with unusual coordination (for solid-state compounds) of the boron atoms by transition metal atoms. The boron atom is square planar in LaOs2Al2B, whereas it exhibits linear and T-shaped geometries in La2Os2AlB2. Electrical resistivity measurements reveal poor metal behavior (ρ300 K ∼ 900 µΩ cm) for La2Os2AlB2, consistent with the electronic band structure calculations, which also predict a metallic character for LaOs2Al2B.

Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4.

EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non-centrosymmetric structure in the tetragonal I4̄2m space group with unit cell parameters a=6.9016(5) Šand c=8.7153(9) Å. The compound features an indirect optical band gap E(g)=0.26(2) eV, and electronic-structure calculations show that the energy gap originates primarily from hybridization of the Ir 5d orbitals, with small contributions from the Ge 4p and In 5p orbitals. The strong spin-orbit coupling arising from the Ir atoms, and the lack of inversion symmetry leads to significant spin splitting, which is described by the Dresselhaus term, at both the conduction- and valence-band edges. The magnetic Eu(2+) ions present in the structure, which do not play a role in gap formation, order antiferromagnetically at 2.5 K.

Ba2HgS5--a molecular trisulfide salt with dumbbell-like (HgS2)2- ions.

Ba2HgS5 was synthesized by cooling a molten mixture of BaS, HgS, and elemental sulfur. It crystallizes in the orthorhombic Pnma space group with a = 12.190(2) Å, b = 8.677(2) Å, c = 8.371(2) Å, and dcalc = 4.77 g cm(-3). Its crystal structure consists of isolated dumbbell-shaped (HgS2)(2-) and v-shaped S3(2-) ions. These molecular anions are charge-balanced by Ba(2+) cations. Raman spectroscopy shows three strong bands originating from symmetric, asymmetric, and bending vibrational modes of the S3(2-) ions. X-ray photoelectron spectroscopic analysis confirms the presence of the trisulfide species. Ba2HgS5 has a bandgap of ∼2.4 eV. Electronic band structure calculations show that the bandgap is defined essentially by the p-orbitals of the sulfur atoms of the S3(2-) group.

LiPbSb3S6: a semiconducting sulfosalt with very low thermal conductivity.

The new semiconductor LiPbSb3S6 crystallizes in the space group P21/c. The structure is a member of the lillianite homologous series and is composed of layers of PbS archetype Sb/Li-S separated by trigonal-prismatic-coordinated Pb/Li. Electronic band structure calculations indicate an indirect band gap, with direct gaps lying very close in energy. LiPbSb3S6 has one of the lowest thermal conductivities seen in a crystalline material, ∼0.24 W m(-1) K(-1) at room temperature, and a high resistivity, ∼4 × 10(9) Ω·cm, and exhibits strong light absorption with a nearly direct band gap of 1.6 eV.

Mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te): syntheses, crystal structures, band structures, and optical properties.

Three quaternary mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te), are reported along with their syntheses, crystal structures, electronic band structures, and optical properties. The compounds are structurally similar with a layer comprised of a hole perforated sheet network of [Hg3Q2](2+) (Q = S and Te) that forms by fused cyclohexane, chairlike Hg6Q6 rings. The cationic charge in the network is balanced by edge-sharing monocapped trigonal-prismatic anions of [Bi2Cl8](2-) that form a two-dimensional network located between layers. Compound 1, Hg3S2Bi2Cl8, crystallizes in the monoclinic space group C12/m1 with a = 12.9381(9) Å, b = 7.3828(6) Å, c = 9.2606(6) Å, and ß = 116.641(5)°. Compound 2, Hg3Te2Bi2Cl8, crystallizes in the monoclinic space group C12/c1 with a = 17.483(4) Å, b = 7.684(2) Å, c = 13.415(3) Å, and ß = 104.72(3)°. The crystals of the Hg3Se2Bi2Cl8 analogue exhibit complex modulations and structural disorder, which complicated its structural refinement. Compounds 1 and 2 melt incongruently and show band gaps of 3.26 and 2.80 eV, respectively, which are in a good agreement with those from band-structure density functional theory calculations.

Thallium mercury chalcobromides, TlHg6Q4Br5 (Q = S, Se).

The new compounds TlHg6Q4Br5 (Q = S, Se) are reported along with their syntheses, crystal structures, and thermal and optical properties, as well as electronic band structure calculations. Both compounds crystallize in the tetragonal I4/m space group with a = 14.145(1) Å, c = 8.803(1) Å, and dcalc = 7.299 g/cm(3) for TlHg6S4Br5 (compound 1) and a = 14.518(2) Å, c = 8.782(1) Å, and dcalc = 7.619 g/cm(3) for TlHg6Se4Br5 (compound 2). They consist of cuboid Hg12Q8 building units interconnected by trigonal pyramids of BrHg3, forming a three-dimensional structure. The interstitial spaces are filled with thallium and bromide ions. Compounds 1 and 2 melt incongruently and show band gaps of 3.03 and 2.80 eV, respectively, which agree well with the calculated ones. First-principles electronic structure calculations at the density functional theory level reveal that both compounds have indirect band gaps, but there also exist direct transitions at energies similar to the indirect gaps.

KAg11(VO4)4 as a candidate p-type transparent conducting oxide.

For a material to be a good p-type transparent conducting oxide (TCO), it must simultaneously satisfy several design principles regarding its bulk and defect phase thermochemistry, its optical absorption spectrum, and its electric transport properties. Recently, we predicted Ag3VO4 to be p-type but with low conductivity and an optical band gap not large enough for transparency. To improve on the transport and optical properties of Ag3VO4, we searched an extended material space including quaternary compounds based on Ag, V, O, and an additional atom for a new candidate p-type TCO. From this set of quaternary materials, we selected KAg11(VO4)4, a known oxide with a crystal structure related to that of Ag3VO4. Notably, one could expect a possible enhancement of the concentration of hole producing Ag-vacancy defects in KAg11(VO4)4 due to its different local geometries of Ag atoms (2- and 3-fold coordinated) with respect to the 4-fold coordinated Ag atoms in Ag3VO4. By performing first-principles calculations, we found that KAg11(VO4)4 is an intrinsic p-type conductor and can be synthesized under conditions similar to those predicted for the synthesis of Ag3VO4. However, we predict that the intrinsic hole content in KAg11(VO4)4 is similar to that in Ag3VO4 even though KAg11(VO4)4 contains 2- and 3-fold coordinated Ag, hole producing sites with a lower defect formation energy than the 4-fold coordinated one. Our calculation demonstrates that the advantage from lower coordination number of the Ag atom in KAg11(VO4)4 can be offset by the change in the range of Ag chemical potential in which synthesis is allowed due to the oxide phases that Ag forms with K and that energetically compete with KAg11(VO4)4.

Rationally Designed Eco-Friendly Solvent System for High-Performance, Large-Area Perovskite Solar Cells and Modules.

The important but remained issue to be addressed to achieve the mass production of perovskite solar modules include a large-area fabrication of high-quality perovskite film with eco-friendly, viable production methods. Although several efforts are made to achieve large-area fabrication of perovskite, the development of eco-friendly solvent system, which is precisely designed to be fit to scale-up methods are still challenging. Herein, this work develops the eco-friendly solvent/co-solvent system to produce a high-quality perovskite layer with a bathing in eco-friendly antisolvent. The new co-solvent/additive, methylsulfonylmethane (MSM), efficiently improves the overall solubility and has a suitable binding strength to the perovskite precursor, resulting in a high-quality perovskite film with antisolvent bathing method in large area. The resultant perovskite solar cells showed high power conversion efficiency of over 24% (in reverse scan), with a good long-term stability under continuous light illumination or damp-heat condition. MSM is also beneficial to produce a perovskite layer at low-temperature or high-humidity. MSM-based solvent system is finally applied to large-area, resulting in highly efficiency perovskite solar modules with PCE of 19.9% (by aperture) or 21.2% (by active area) in reverse scan. These findings contribute to step forward to a mass production of perovskite solar modules with eco-friendly way.

CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.

CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI(3) is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.

Nanometer-scale loop currents and induced magnetic dipoles in carbon nanotubes with defects.

In metallic carbon nanotubes with defects, the electric current flow is expected to have characteristic spatial patterns depending on the nature of the defects. Here, we show, using first-principles transport calculations, that locally rotating loop currents in nanometer scale can be generated near defects in carbon nanotubes by quantum interference of conducting and quasi-bound states of electrons. The loop currents appear at energies near transmission dips, having opposite directions at lower- and higher-energy sides of the transmission dips and disappearing exactly at the centers of the dips. Temporal modulations of gate voltage around a transmission dip can produce oscillating magnetic dipoles, inducing magnetic fields that reflect characteristics of defects. This generation of loop currents and magnetic dipoles by quantum interference can generally occur in any nanostructure and it is potentially useful for novel electronic and magnetic nanodevices.