Improvements on the uniformity of large-area microlens arrays in Fused Silica.

The uniformity of large microlens arrays in Fused Silica is governed by the production process. It comprises photolithographic patterning of a spin-coated layer of photoresist on a 200mm wafer with a molten resist reflow process and subsequent dry etching. By investigating systematic influences throughout the production process we show how to steer the lens production process with a single degree of freedom to improve the uniformity of the final microlens array. To enable this we describe the optical performance of microlenses with only one parameter: the principal aberration component. It is the result of principal component analysis of the chosen optical merit function. We present the case of manufactured microlens arrays with element sizes >100 mm × 100 mm where uniformity was improved by a factor of 2.

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography.

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is optical proximity correction. This method relies on a deliberate sub-resolution modification of photomask features to counteract such shape distortions, with the goal to improve pattern fidelity and uniformity of printed features. While previously considered for masks featuring only rectangular shapes in horizontal or vertical orientation, called Manhatten geometries, we demonstrate here the capabilities of computational mask aligner lithography by extending optical proximity correction to non-Manhattan geometries. We combine a rigorous simulation method for light propagation with a particle-swarm optimization to identify suitable mask patterns adapt to each occurring feature in the mask. The improvement in pattern quality is demonstrated in experimental prints. Our method extends the use of proximity lithography in optical manufacturing, as required in a multitude of micro-optical devices.

Printing sub-micron structures using Talbot mask-aligner lithography with a 193 nm CW laser light source.

A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged as a viable path. Here, by combining the Talbot effect with a continuous wave laser source emitting at 193 nm, we demonstrate successfully the fabrication of periodic arrays in silicon substrates with sub-micron feature sizes. The excellent coherence and the superior brilliance of this light source, compared to more traditional mercury lamps and excimer lasers as light source, enables the efficient beam shaping and a reduced minimum feature size at a fixed gap of 20 µm. We present a comprehensive study of proximity printing with this system, including simulations and selected experimental results of prints in up to the fourth Talbot plane. This printing technology can be used to manufacture optical metasurfaces, bio-sensor arrays, membranes, or microchannel plates.

Mask-aligner lithography using a continuous-wave diode laser frequency-quadrupled to 193 nm.

We present a mask-aligner lithographic system operated with a frequency-quadrupled continuous-wave diode laser emitting at 193 nm. For this purpose, a 772 nm diode laser is amplified by a tapered amplifier in the master-oscillator power-amplifier configuration. The emission wavelength is upconverted twice, using LBO and KBBF nonlinear crystals in second-harmonic generation enhancement cavities. An optical output power of 10 mW is achieved. As uniform exposure field illumination is crucial in mask-aligner lithography, beam shaping is realized with optical elements made from fused silica and CaF2 featuring a diffractive non-imaging homogenizer. A tandem setup of shaped random diffusers, one static and one rotating, is used to control speckle formation. We demonstrate first experimental soft contact and proximity prints for a field size of 1 cm2 with a standard binary photomask and proximity prints with a two-level phase mask, both printed into 120 nm layers of photoresist on unstructured silicon substrates.

Speckle orientation in paraxial optical systems.

The statistical properties of speckles in paraxial optical systems depend on the system parameters. In particular, the speckle orientation and the lateral dependence (x and y) of the longitudinal speckle size can vary significantly. For example, the off-axis longitudinal correlation length remains equal to the on-axis size for speckles in a Fourier transform system, while it decreases dramatically as the observation position moves off axis in a Fresnel system. In this paper, we review the speckle correlation function in general linear canonical transform (LCT) systems, clearly demonstrating that speckle properties can be controlled by introducing different optical components, i.e., lenses and sections of free space. Using a series of numerical simulations, we examine how the correlation function changes for some typical LCT systems. The integrating effect of the camera pixel and the impact this has on the measured first- and second-order statistics of the speckle intensities is also examined theoretically. A series of experimental results are then presented to confirm several of these predictions. First, the effect the pixel size has on the measured first-order speckle statistics is demonstrated, and second, the orientation of speckles in a Fourier transform system is measured, showing that the speckles lie parallel to the optical axis.