RESUMEN
A novel wavy-shaped thin-film-transistor (TFT) architecture, capable of achieving 70% higher drive current per unit chip area when compared with planar conventional TFT architectures, is reported for flexible display application. The transistor, due to its atypical architecture, does not alter the turn-on voltage or the OFF current values, leading to higher performance without compromising static power consumption. The concept behind this architecture is expanding the transistor's width vertically through grooved trenches in a structural layer deposited on a flexible substrate. Operation of zinc oxide (ZnO)-based TFTs is shown down to a bending radius of 5 mm with no degradation in the electrical performance or cracks in the gate stack. Finally, flexible low-power LEDs driven by the respective currents of the novel wavy, and conventional coplanar architectures are demonstrated, where the novel architecture is able to drive the LED at 2 × the output power, 3 versus 1.5 mW, which demonstrates the potential use for ultrahigh resolution displays in an area efficient manner.
RESUMEN
Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.
RESUMEN
Zeolitic imidazolate frameworks (ZIFs) are interesting materials for use in several aspects: energy storage material, gas sensing, and photocatalysis. The thermal stability and pyrolysis process are crucial in determining the active phase of the material. A deep understanding of the pyrolysis mechanism is in demand. Therefore, the thermodynamics and combustion process with different heating rates was examined, and the kinetic parameters were computed employing thermogravimetric tests. Based on the TG analysis of combustion, pyrolysis moves to the high-temperature region with an increase in heating rate. The decomposition process can be separated into the dehydration (300-503 K) and the pyrolysis reaction (703-1100 K). Three points of the decomposition process are performed by dynamical analysis owing to shifts of slopes, but the combustion process has only one stage. The Zeolitic imidazolate framework's structure properties were examined using TDDFT-DFT/DMOl3 simulation techniques. Dynamical parameters, for instance, the possible mechanism, the pre-exponential factor, and the apparent activation energy are obtained through comparison using the Kissinger formula. The thermodynamics analysis of the Zn1-xCox-ZIF-8 materials is an effective way to explore the temperature influence on the process of pyrolysis, which can benefit several environment purifications, photocatalyst, and recent applications.
RESUMEN
The ability to incorporate rigid but high-performance nanoscale nonplanar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nanoscale, nonplanar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stacks, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 µm gate length, exhibits an ION value of nearly 70 µA/µm (VDS = 2 V, VGS = 2 V) and a low subthreshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device's performance with insignificant deterioration even at a high bending state.