Photoinduced work function changes by isomerization of a densely packed azobenzene-based SAM on Au: a joint experimental and theoretical study.

Responsive monolayers are key building blocks for future applications in organic and molecular electronics in particular because they hold potential for tuning the physico-chemical properties of interfaces, including their energetics. Here we study a photochromic SAM based on a conjugated azobenzene derivative and its influence on the gold work function (Φ(Au)) when chemisorbed on its surface. In particular we show that the Φ(Au) can be modulated with external stimuli by controlling the azobenzene trans/cis isomerization process. This phenomenon is characterized experimentally by four different techniques, kelvin probe, kelvin probe force microscopy, electroabsorption spectroscopy and ultraviolet photoelectron spectroscopy. The use of different techniques implies exposing the SAM to different measurement conditions and different preparation methods, which, remarkably, do not alter the observed work function change (Φ(trans)-Φ(cis)). Theoretical calculations provided a complementary insight crucial to attain a deeper knowledge on the origin of the work function photo-modulation.

Addressing reliability and degradation of chemitransistor sensors by electrical tuning of the sensitivity.

Here we show that electrical tuning of the sensitivity of chemitransistor sensors, namely field-effect-transistors (FETs) exploiting nano/mesostructured sensing materials, can be used to effectively address two chief problems of state-of-the-art gas sensors, specifically fabrication reliability and degradation by aging. Both experimental evidences and theoretical calculations are provided to support such a result, using as a case-of-study junction field-effect-transistors (JFETs) exploiting mesostructured porous silicon (PS) as sensing material (PSJFETs) for the detection of nitrogen dioxide (NO(2)) at hundreds ppb. Proof of concept is given by fully compensating the effect of fabrication errors on the sensitivity of two PSJFETs integrated on the same chip, which, though identical in principle, feature sensitivities to NO(2) differing from about 30% before compensation. Although here-demonstrated for the specific case of PSJFETs, the concept of sensor reliability/aging problem compensation by sensitivity electrical-tuning can be applied to other chemitransistor sensors that exploit sensing materials different than PS.