Edge states in coupled non-Hermitian resonators.

Small perturbations may dramatically influence the physical properties of a single non-Hermitian cavity. However, how these small perturbations interplay with bulk-edge properties is still to be demonstrated by experimentation. Here, we experimentally demonstrate edge states in coupled non-Hermitian resonators, based on a chain of all-dielectric coupled resonators where each resonator consists of two target particles. The evanescent coupling between the cavity and the target particles leads to tunable asymmetric backscattering, which plays a key role in the appearance of edge states in the bulk bandgap. We also demonstrate that these observed edge states are robust against weak disorders introduced to the system. Our study may inspire further explorations of the non-Hermitian bulk-edge properties.

2D Material Infrared Photonics and Plasmonics.

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 µm to 1000 µm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Broadband Enhancement of Cherenkov Radiation Using Dispersionless Plasmons.

As one of leading technologies in detecting relativistic particles, Cherenkov radiation plays an essential role in modern high-energy and particle physics. However, the limited photon yield in transparent dielectrics makes efficient Cherenkov radiation only possible with high-energy particles (at least several MeV). This restriction hinders applications of Cherenkov radiation in free-electron light source, bio-imaging, medical therapy, etc. Broadband enhancement of Cherenkov radiation is highly desired for all these applications, but still widely acknowledged as a scientific challenge. To this end, a general approach is reported to enhance the photon yield of Cherenkov radiation using dispersionless plasmons. Broadband dispersionless plasmons can be realized by exploiting either the acoustic nature of terahertz plasmons in a graphene-based heterostructure or the nonlocal property of optical plasmons in a metallodielectric structure. When coupled to moving electrons, such dispersionless plasmons give rise to a radiation enhancement rate more than two orders of magnitude (as compared with conventional Cherenkov radiation) over an ultrabroad frequency band. Moreover, since the phase velocity of dispersionless plasmons can be made as small as the Fermi velocity, giant radiation enhancements can be readily induced by ultralow-energy free electrons (e.g., with a kinetic energy down to 3 eV), without resorting to relativistic particles.

Observation of Topological Edge States in Thermal Diffusion.

Topological band theory predicts that bulk materials with nontrivial topological phases support topological edge states. This phenomenon is universal for various wave systems and is widely observed for electromagnetic and acoustic waves. Here, the notion of band topology is extended from wave to diffusion dynamics. Unlike wave systems that are usually Hermitian, diffusion systems are anti-Hermitian with purely imaginary eigenvalues corresponding to decay rates. By direct probe of the temperature diffusion, the Hamiltonian of a thermal lattice is experimentally retrieved, and the emergence of topological edge decays is observed within the gap of bulk decays. The results of this work show that such edge states exhibit robust decay rates, which are topologically protected against disorder. This work constitutes a thermal analogue of topological insulators and paves the way to exploring defect-immune heat dissipation.

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

All-inorganic perovskite CsPbX3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.