Bright triplet excitons in caesium lead halide perovskites.

Nanostructured semiconductors emit light from electronic states known as excitons. For organic materials, Hund's rules state that the lowest-energy exciton is a poorly emitting triplet state. For inorganic semiconductors, similar rules predict an analogue of this triplet state known as the 'dark exciton'. Because dark excitons release photons slowly, hindering emission from inorganic nanostructures, materials that disobey these rules have been sought. However, despite considerable experimental and theoretical efforts, no inorganic semiconductors have been identified in which the lowest exciton is bright. Here we show that the lowest exciton in caesium lead halide perovskites (CsPbX3, with X = Cl, Br or I) involves a highly emissive triplet state. We first use an effective-mass model and group theory to demonstrate the possibility of such a state existing, which can occur when the strong spin-orbit coupling in the conduction band of a perovskite is combined with the Rashba effect. We then apply our model to CsPbX3 nanocrystals, and measure size- and composition-dependent fluorescence at the single-nanocrystal level. The bright triplet character of the lowest exciton explains the anomalous photon-emission rates of these materials, which emit about 20 and 1,000 times faster than any other semiconductor nanocrystal at room and cryogenic temperatures, respectively. The existence of this bright triplet exciton is further confirmed by analysis of the fine structure in low-temperature fluorescence spectra. For semiconductor nanocrystals, which are already used in lighting, lasers and displays, these excitons could lead to materials with brighter emission. More generally, our results provide criteria for identifying other semiconductors that exhibit bright excitons, with potential implications for optoelectronic devices.

Effect of Anisotropic Confinement on Electronic Structure and Dynamics of Band Edge Excitons in Inorganic Perovskite Nanowires.

Inorganic lead halide perovskite nanostructures show promise as the active layers in photovoltaics, light emitting diodes, and other optoelectronic devices. They are robust in the presence of oxygen and water, and the electronic structure and dynamics of these nanostructures can be tuned through quantum confinement. Here we create aligned bundles of CsPbBr3 nanowires with widths resulting in quantum confinement of the electronic wave functions and subject them to ultrafast microscopy. We directly image rapid one-dimensional exciton diffusion along the nanowires, and we measure an exciton trap density of roughly one per nanowire. Using transient absorption microscopy, we observe a polarization-dependent splitting of the band edge exciton line, and from the polarized fluorescence of nanowires in solution, we determine that the exciton transition dipole moments are anisotropic in strength. Our observations are consistent with a model in which splitting is driven by shape anisotropy in conjunction with long-range exchange.

Exciton Fine Structure in Perovskite Nanocrystals.

The bright emission observed in cesium lead halide perovskite nanocrystals (NCs) has recently been explained in terms of a bright exciton ground state [ Becker et al. Nature 2018 , 553 , 189 - 193 ], a claim that would make these materials the first known examples in which the exciton ground state is not an optically forbidden dark exciton. This unprecedented claim has been the subject of intense experimental investigation that has so far failed to detect the dark ground-state exciton. Here, we review the effective-mass/electron-hole exchange theory for the exciton fine structure in cubic and tetragonal CsPbBr3 NCs. In our calculations, the crystal field and the short-range electron-hole exchange constant were calculated using density functional theory together with hybrid functionals and spin-orbit coupling. Corrections associated with long-range exchange and surface image charges were calculated using measured bulk effective mass and dielectric parameters. As expected, within the context of the exchange model, we find an optically inactive ground exciton level. However, in this model, the level order for the optically active excitons in tetragonal CsPbBr3 NCs is opposite to what has been observed experimentally. An alternate explanation for the observed bright exciton level order in CsPbBr3 NCs is offered in terms of the Rashba effect, which supports the existence of a bright ground-state exciton in these NCs. The size dependence of the exciton fine structure calculated for perovskite NCs shows that the bright-dark level inversion caused by the Rashba effect is suppressed by the enhanced electron-hole exchange interaction in small NCs.

Ultrathin Amorphous Titania on Nanowires: Optimization of Conformal Growth and Elucidation of Atomic-Scale Motifs.

Due to its chemical stability, titania (TiO2) thin films increasingly have significant impact when applied as passivation layers. However, optimization of growth conditions, key to achieving essential film quality and effectiveness, is challenging in the few-nanometers thickness regime. Furthermore, the atomic-scale structure of the nominally amorphous titania coating layers, particularly when applied to nanostructured supports, is difficult to probe. In this Letter, the quality of titania layers grown on ZnO nanowires is optimized using specific strategies for processing of the nanowire cores prior to titania coating. The best approach, low-pressure O2 plasma treatment, results in significantly more-uniform titania films and a conformal coating. Characterization using X-ray absorption near edge structure (XANES) reveals the titania layer to be highly amorphous, with features in the Ti spectra significantly different from those observed for bulk TiO2 polymorphs. Analysis based on first-principles calculations suggests that the titania shell contains a substantial fraction of under-coordinated Ti4+ ions. The best match to the experimental XANES spectrum is achieved with a "glassy" TiO2 model that contains ∼50% of under-coordinated Ti4+ ions, in contrast to bulk crystalline TiO2 that only contains 6-coordinated Ti4+ ions in octahedral sites.

Quasicubic model for metal halide perovskite nanocrystals.

We present an analysis of quantum confinement of carriers and excitons, and exciton fine structure, in metal halide perovskite (MHP) nanocrystals (NCs). Starting with coupled-band k · P theory, we derive a nonparabolic effective mass model for the exciton energies in MHP NCs valid for the full size range from the strong to the weak confinement limits. We illustrate the application of the model to CsPbBr3 NCs and compare the theory against published absorption data, finding excellent agreement. We then apply the theory of electron-hole exchange, including both short- and long-range exchange interactions, to develop a model for the exciton fine structure. We develop an analytical quasicubic model for the effect of tetragonal and orthorhombic lattice distortions on the exchange-related exciton fine structure in CsPbBr3, as well as some hybrid organic MHPs of recent interest, including formamidinium lead bromide (FAPbBr3) and methylammonium lead iodide (MAPbI3). Testing the predictions of the quasicubic model using hybrid density functional theory (DFT) calculations, we find qualitative agreement in tetragonal MHPs but significant disagreement in the orthorhombic modifications. Moreover, the quasicubic model fails to correctly describe the exciton oscillator strength and with it the long-range exchange corrections in these systems. Introducing the effect of NC shape anisotropy and possible Rashba terms into the model, we illustrate the calculation of the exciton fine structure in CsPbBr3 NCs based on the results of the DFT calculations and examine the effect of Rashba terms and shape anisotropy on the calculated fine structure.

Ap-type dopable ultrawide-bandgap oxide.

A major shortcoming of ultrawide-bandgap (UWBG) semiconductors is unipolar doping, in which eithern-type orp-type conductivity is typically possible, but not both within the same material. For UWBG oxides, the issue is usually thep-type conductivity, which is inhibited by a strong tendency to form self-trapped holes (small polarons) in the material. Recently, rutile germanium oxide (r-GeO2), with a band gap near 4.7 eV, was identified as a material that might break this paradigm. However, the predicted acceptor ionization energies are still relatively high (∼0.4 eV), limitingp-type conductivity. To assess whether r-GeO2is an outlier due to its crystal structure, the properties of a set of rutile oxides are calculated and compared. Hybrid density functional calculations indicate that rutile TiO2and SnO2strongly trap holes at acceptor impurities, consistent with previous work. Self-trapped holes are found to be unstable in r-SiO2, a metastable polymorph that has a band gap near 8.5 eV. Group-III acceptor ionization energies are also found to be lowest among the rutile oxides and approach those of GaN. Acceptor impurities have sufficiently low formation energies to not be compensated by donors such as oxygen vacancies, at least under O-rich limit conditions. Based on the results, it appears that r-SiO2has the potential to exhibit the most efficientp-type conductivity when compared to other UWBG oxides.

Shallow versus deep nature of Mg acceptors in nitride semiconductors.

We investigate the properties of Mg acceptors in nitride semiconductors with hybrid functional calculations. We find that although the thermodynamic transition level is relatively close to the valence band in GaN (260 meV), Mg(Ga) exhibits key features of a deep acceptor: the hole is localized on a N atom neighboring the Mg impurity, inducing a large local lattice distortion and giving rise to broad blue luminescence. We show that the ultraviolet photoluminescence peak attributed to Mg acceptors in GaN is likely related to Mg-H complexes, explaining the results of photoluminescence and electron paramagnetic resonance experiments. Predictions for Mg acceptors in AlN and InN are also presented.

First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO.

We present a theoretical study of the broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multidimensional vibrational problem can be mapped onto an effective one-dimensional configuration coordinate diagram. Our approach is implemented based on density functional theory with a hybrid functional, resulting in luminescence line shapes for important defects in GaN and ZnO that show unprecedented agreement with experiment. We find clear trends concerning effective parameters that characterize luminescence bands of donor- and acceptor-type defects, thus facilitating their identification.

Dark and Bright Excitons in Halide Perovskite Nanoplatelets.

Semiconductor nanoplatelets (NPLs), with their large exciton binding energy, narrow photoluminescence (PL), and absence of dielectric screening for photons emitted normal to the NPL surface, could be expected to become the fastest luminophores amongst all colloidal nanostructures. However, super-fast emission is suppressed by a dark (optically passive) exciton ground state, substantially split from a higher-lying bright (optically active) state. Here, the exciton fine structure in 2-8 monolayer (ML) thick Csn - 1 Pbn Br3n + 1 NPLs is revealed by merging temperature-resolved PL spectra and time-resolved PL decay with an effective mass model taking quantum confinement and dielectric confinement anisotropy into account. This approach exposes a thickness-dependent bright-dark exciton splitting reaching 32.3 meV for the 2 ML NPLs. The model also reveals a 5-16 meV splitting of the bright exciton states with transition dipoles polarized parallel and perpendicular to the NPL surfaces, the order of which is reversed for the thinnest NPLs, as confirmed by TR-PL measurements. Accordingly, the individual bright states must be taken into account, while the dark exciton state strongly affects the optical properties of the thinnest NPLs even at room temperature. Significantly, the derived model can be generalized for any isotropically or anisotropically confined nanostructure.

Rashba exciton in a 2D perovskite quantum dot.

The Rashba effect has been proposed to give rise to a bright exciton ground state in halide perovskite nanocrystals (NCs), resulting in very fast radiative recombination at room temperature and extremely fast radiative recombination at low temperature. In this paper we find the dispersion of the "Rashba exciton", i.e., the exciton whose bulk dispersion reflects large spin-orbit Rashba terms in the conduction and valence bands and thus has minima at non-zero quasi-momenta. Placing Rashba excitonsin quasi-2D cylindrical quantum dots, we calculate size-dependent levels of confined excitons and their oscillator transition strengths. We consider the implications of this model for two-dimensional hybrid organic-inorganic perovskites, discuss generalizations of this model to 3D NCs, and establish criteria under which a bright ground exciton state could be realized.

Correction: Rashba exciton in a 2D perovskite quantum dot.

Correction for 'Rashba exciton in a 2D perovskite quantum dot' by Michael W. Swift et al., Nanoscale, 2021, 13, 16769-16780, DOI: 10.1039/D1NR04884H.

Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth.

We develop a microscopic theoretical model of AlN, GaN, and InN film growth by atomic layer epitaxy. To make the model realistic, we take into account the atomic hydrogen that is created by the hydrogen plasma commonly used in plasma-assisted atomic layer epitaxy. This growth technique relies on separate deposition steps for nitrogen and the group-III cation. Our model addresses the processes that occur after a complete monolayer of nitrogen has formed, that is, the deposition, adsorption, surface diffusion, island nucleation, and island growth of group-III cations. According to our model, the three nitrides grow in a standard and qualitatively similar manner: during a brief nucleation phase, a modest attractive interaction leads to stable island nuclei consisting of just a few atoms. These then grow in place at a nearly constant island density and with an island size distribution which obeys an expected universal scaling relationship that depends only on the critical island size.

Band Alignment of ScxAl1-xN/GaN Heterojunctions.

ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of epitaxial growth of ScAlN on GaN has unlocked prospects for new high-power transistors and nonvolatile memory technologies fabricated from these materials. An understanding of the band alignments between ScAlN and GaN is crucial in order to control the electronic and optical properties of engineered devices. To date, there have been no experimental studies of the band offsets between ScAlN and GaN. This work presents optical characterization of the band gap of molecular beam epitaxy grown ScxAl1-xN using spectroscopic ellipsometry and measurements of the band offsets of ScxAl1-xN with GaN using X-ray photoemission spectroscopy, along with a comparison to first-principles calculations. The band gap is shown to continuously decrease as a function of increasing ScN alloy fraction with a negative bowing parameter. Furthermore, a crossover from straddling (type-I) to staggered (type-II) band offsets is demonstrated as Sc composition increases beyond approximately x = 0.11. These results show that the ScAlN/GaN valence band alignment can be tuned by changing the Sc alloy fraction, which can help guide the design of heterostructures in future ScAlN/GaN-based devices.

Atomic Layer Epitaxy of Aluminum Nitride: Unraveling the Connection between Hydrogen Plasma and Carbon Contamination.

Atomistic control over the growth of semiconductor thin films, such as aluminum nitride, is a long-sought goal in materials physics. One promising approach is plasma-assisted atomic layer epitaxy, in which separate reactant precursors are employed to grow the cation and anion layers in alternating deposition steps. The use of a plasma during the growth-most often a hydrogen plasma-is now routine and generally considered critical, but the precise role of the plasma is not well-understood. We propose a theoretical atomistic model and elucidate its consequences using analytical rate equations, density functional theory, and kinetic Monte Carlo statistical simulations. We show that using a plasma has two important consequences, one beneficial and one detrimental. The plasma produces atomic hydrogen in the gas phase, which is important for removing methyl radicals left over from the aluminum precursor molecules. However, atomic hydrogen also leads to atomic carbon on the surface and, moreover, opens a channel for trapping these carbon atoms as impurities in the subsurface region, where they remain as unwanted contaminants. Understanding this dual role leads us to propose a solution for the carbon contamination problem which leaves the main benefit of the plasma largely unaffected.