RESUMEN
Owing to great luminescent monochromaticity, high stability, and independent of automatic color filter, low dimensional ultraviolet light-emitting diodes (LEDs) via the hyperpure narrow band have attracted considerable interest for fabricating miniatured display equipments, solid state lighting sources, and other ultraviolet photoelectrical devices. In this study, a near-ultraviolet LED composed of one Ga-doped ZnO microwire (ZnO:Ga MW) and p-GaN layer was fabricated. The diode can exhibit bright electroluminescence (EL) peaking at 400.0 nm, with a line width of approximately 35 nm. Interestingly, by introducing platinum nanoparticles (PtNPs), we achieved an ultraviolet plasmonic response; an improved EL, including significantly enhanced light output; an observed blueshift of main EL peaks of 377.0 nm; and a reduction of line width narrowing to 10 nm. Working as a powerful scalpel, the decoration of PtNPs can be employed to tailor the spectral line profiles of the ultraviolet EL performances. Also, a rational physical model was built up, which could help us study the carrier transportation, recombination of electrons and holes, and dynamic procedure of luminescence. This method offers a simple and feasible way, without complicated fabricating technology such as an added insulating layer or core shell structure, to realize hyperpure ultraviolet LED. Therefore, the proposed engineering of energy band alignment by introducing PtNPs can be employed to build up high performance, high spectral purity luminescent devices in the short wavelengths.
RESUMEN
Introducing nanostructured metals with ultraviolet plasmonic characters has attracted much attention for fabricating high performance optoelectronic devices in the shorter wavelength spectrum. In this work, platinum nanoparticles (PtNPs) with controlled plasmonic responses in ultraviolet wavelengths were successfully synthesized. To demonstrate the promising availability, PtNPs with desired sizes were deposited on a hexagonal ZnO microwire via Ga-doping (PtNPs@ZnO:Ga MW). Under ultraviolet illumination, typical near-band-edge emission of ZnO:Ga MW was considerably enhanced; meanwhile, the photocurrent is much larger than that of the bare MW. Thereby, the enhanced phenomena of a ZnO:Ga MW is related to localized surface plasmon resonances of the decorated PtNPs. A single MW with a hexagonal cross-section can be a potential platform to construct a whispering gallery mode (WGM) cavity due to its total inner wall reflection. Given this, the influence of PtNPs via ultraviolet plasmons on lasing features of the ZnO:Ga MW was tested. The lasing characteristics are significantly enhanced, including lasing output enhancement, a clear reduction of the threshold and the improvement of the quality factor. To exploit the working principle, PtNPs serving as powerful ultraviolet plasmons can couple with ZnO:Ga excitons, accelerating radiative recombination. Since fabricating stable, typical nanostructured metals with ultraviolet plasmons remains a challenging issue, the results illustrated in the work may offer a low-cost and efficient scheme for achieving plasmon-enhanced wide-bandgap semiconductor based ultraviolet optoelectronic devices with excellent performances.
RESUMEN
Ultraviolet light-emitting materials and devices with high-efficiency are required for many applications. One promising way to enhance the ultraviolet luminescence efficiency is by incorporating plasmonic nanostructures. However, a large energy mismatch between the plasmons and the light emitters greatly limits the direct realization of light enhancement. In this work, a single Ga-doped ZnO microwire prepared with large-sized Ag nanoparticle (the diameter d â¼ 200 nm) deposition (AgNPs@ZnO:Ga MW) was utilized to construct a high-performance heterojunction diode, with p-GaN serving as the hole injection layer. In addition to enhanced optical output, the emission spectra also revealed that typical near-band-edge (NBE) emission with higher wavelength stability centered around 378.0 nm was achieved, accompanied by narrowing of the spectral linewidth to around 10 nm. Thus, the interfacial and p-GaN emissions were successfully suppressed. The spectral profile of the emission spectra of the heterojunction diodes precisely matched the photoluminescence spectrum of the single ZnO:Ga MW, which indicates that the single ZnO:Ga MW can act as the active region for the radiative recombination of electrons and holes in the diode operation. In the emission mechanism, hybrid quadrupole plasmons induce the generation of hot electrons, which are then injected into the conduction band of the neighboring ZnO:Ga and are responsible for the NBE-type emission of the single MW based heterojunction diode. This novel emission enhancement and modulation principle can aid in the design and development of new types of luminescent materials and devices with high-efficiency, spectral stability and spectral purity.