Ultrafast Carrier Dynamics and Bandgap Renormalization in Layered PtSe2.

Carrier interactions in 2D nanostructures are of central importance not only in condensed-matter physics but also for a wide range of optoelectronic and photonic applications. Here, new insights into the behavior of photoinduced carriers in layered platinum diselenide (PtSe2 ) through ultrafast time-resolved pump-probe and nonlinear optical measurements are presented. The measurements reveal the temporal evolution of carrier relaxation, chemical potential and bandgap renormalization in PtSe2 . These results imply that few-layer PtSe2 has a semiconductor-like carrier relaxation instead of a metal-like one. The relaxation follows a triple-exponential decay process and exhibits thickness-dependent relaxation times. This occurs along with a band-filling effect, which can be controlled based on the number of layers and may be applied in saturable absorption for generating ultrafast laser pulses. The findings may provide means to study many-body physics in 2D materials as well as potentially leading to applications in the field of optoelectronics and ultrafast photonics.

Ultrafast Nonlinear Excitation Dynamics of Black Phosphorus Nanosheets from Visible to Mid-Infrared.

The recent progress on black phosphorus makes it a promising candidate material for broadband nanophotonic devices, especially operating in the mid-infrared spectral region. Here, the excited carrier dynamics and nonlinear optical response of unoxidized black phosphorus nanosheets and their wavelength dependence were systematically studied from 800 nm to 2.1 µm. The wavelength-dependent relaxation times of black phosphorus nanosheets are determined to be 360 fs to 1.36 ps with photon energies from 1.55 to 0.61 eV. In a comparative study with graphene, we found that black phosphorus has a faster carrier relaxation in near- and mid-infrared region. With regard to nonlinear optical absorption, the response of black phosphorus significantly increases from near- to mid-infrared, and black phosphorus is also confirmed to be better as saturable absorber to MoS2 in infrared region.

A general strategy for hybrid thin film fabrication and transfer onto arbitrary substrates.

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 µm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 10(4) S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices.