Low loss Ge-on-Si waveguides operating in the 8-14 µm atmospheric transmission window.

Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range.

Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks.

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3-5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips.

Analysis of Ge micro-cavities with in-plane tensile strains above 2.

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 µm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.

Extending the emission wavelength of Ge nanopillars to 2.25 µm using silicon nitride stressors.

The room temperature photoluminescence from Ge nanopillars has been extended from 1.6 µm to above 2.25 µm wavelength through the application of tensile stress from silicon nitride stressors deposited by inductively-coupled-plasma plasma-enhanced chemical-vapour-deposition. Photoluminescence measurements demonstrate biaxial equivalent tensile strains of up to ∼ 1.35% in square topped nanopillars with side lengths of 200 nm. Biaxial equivalent strains of 0.9% are observed in 300 nm square top pillars, confirmed by confocal Raman spectroscopy. Finite element modelling demonstrates that an all-around stressor layer is preferable to a top only stressor, as it increases the hydrostatic component of the strain, leading to an increased shift in the band-edge and improved uniformity over top-surface only stressors layers.

Detection of incremental and decremental bars at different locations across Mach bands and related stimuli.

Two-alternative forced-choice procedures were used to measure the detectability of bright and dark bars at various locations across luminance patterns that produced Mach bands. Detection performance was significantly affected by both dark and bright Mach bands: poor detection performance was observed at locations near, but not in, the Mach bands; relatively good detection performance at locations within the Mach bands was caused by reliable changes in the width, depth, or symmetry of the bands produced by the signal bars. The changes were apparent with signals of lower luminance than that needed for detection in the plateau regions far from the bands, but, because the cues were not sufficiently reliable to allow errorless performance, unusually shaped psychometric functions were obtained.