Understanding the relationship between molecular order and charge transport properties in conjugated polymer based organic blend photovoltaic devices.

We report a detailed characterization of the thin film morphology of all-polymer blend devices by applying a combined analysis of physical, chemical, optical, and charge transport properties. This is exemplified by considering a model system comprising poly(3-hexylthiophene) (P3HT) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT). We show that the interactions between the two conjugated polymer components can be controlled by pre-forming the P3HT into highly ordered nanowire structures prior to blending with F8BT, and by varying the molecular weight of the F8BT. As a result, it is possible to produce films containing highly ordered P3HT with hole mobilities enhanced by three orders of magnitude over the pristine blends. Raman spectroscopy under resonant excitation conditions is used to probe the molecular order of both P3HT and F8BT phases within the blend films and these morphological studies are complemented by measurements of photocurrent generation. The resultant increase in photocurrent is associated with the enhanced charge carrier mobilities. The complementary analytical method demonstrated here is applicable to a wide range of polymer blend systems for all applications where the relationships between morphology and device performance are of interest.

Quantitative nanoscale surface voltage measurement on organic semiconductor blends.

We report on the validation of a method based on Kelvin probe force microscopy (KPFM) able to measure the different phases and the relative work function of polymer blend heterojunctions at the nanoscale. The method does not necessitate complex ultra-high vacuum setup. The quantitative information that can be extracted from the topography and the Kelvin probe measurements is critically analysed. Surface voltage difference can be observed at the nanoscale on poly(3-hexyl-thiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) blends and dependence on the annealing condition and the regio-regularity of P3HT is observed.

The nature of in-plane skeleton Raman modes of P3HT and their correlation to the degree of molecular order in P3HT:PCBM blend thin films.

The nature of main in-plane skeleton Raman modes (C=C and C-C stretch) of poly(3-hexylthiophene) (P3HT) in pristine and its blend thin films with [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) is studied by resonant and nonresonant Raman spectroscopy and Raman simulations. Under resonant conditions, the ordered phase of P3HT with respect to its disordered phase is identified by (a) a large shift in the C=C mode peak position to lower wavenumber (~21 cm(-1) shift), (b) a narrower fwhm of the C=C mode (~9 cm(-1) narrower), (c) a larger intensity of the C-C mode relative to the C=C mode (~56% larger), and (d) a very small Raman dispersion (~5 cm(-1)) of the C=C mode. The behavior of the C=C and C-C modes of the ordered and disordered phases of P3HT can be explained in terms of different molecular conformations. The C=C mode of P3HT in P3HT:PCBM blend films can be reproduced by simple superposition of the two peaks observed in different phases of P3HT (ordered and disordered). We quantify the molecular order of P3HT after blending with PCBM and the subsequent thermal annealing to be 42 ± 5% and 94 ± 5% in terms of the fraction of ordered P3HT phase, respectively. The increased molecular order of P3HT in blends upon annealing correlates well with enhanced device performance (J(SC), -4.79 to -8.72 mA/cm(2) and PCE, 1.07% to 3.39%). We demonstrate that Raman spectroscopy (particularly under resonant conditions) is a simple and powerful technique to study molecular order of conjugated polymers and their blend films.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors.

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10-2 cm2 V-1 s-1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

Phase-separated thin film structures for efficient polymer blend light-emitting diodes.

We report laterally and vertically phase-separated thin film structures in conjugated polymer blends created by polymer molecular weight variation. We find that micrometer-scale lateral phase separation is critical in achieving high initial device efficiency of light-emitting diodes, whereas improved balance of charge carrier mobilities and film thickness uniformity are important in maintaining high efficiency at high voltages. The optoelectronic properties of these blend thin films and devices are strongly influenced by the polymer chain order/disorder and the interface state formed at polymer/polymer heterojunctions.

Optoelectronic and charge transport properties at organic-organic semiconductor interfaces: comparison between polyfluorene-based polymer blend and copolymer.

We report detailed studies of optoelectronic and charge transport properties at the organic-organic semiconductor interfaces formed between polymer chains (interchain) and within a polymer chain (intrachain). These interfaces are fabricated using poly(9,9-di-n-octylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB [f8-tfb]) (electron-donor) and poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT [f8-bt]) (electron-acceptor) conjugated polymers, by blending them together or by covalently attaching them via a main polymer backbone (copolymer). For optoelectronic properties, when a bulky and twisted tfb molecule is incorporated into a rigid F8BT conjugated backbone, it disturbs the conjugation of F8BT polymer, leading to a blue-shift in the lowest absorption transition. However, by acting as an effective electron donor, it assists the formation of an intrachain singlet exciton that has a strong charge-transfer character, leading to a red-shifted and longer-lived emission than that of F8BT. An extremely efficient and fast energy transfer from tfb donor to bt acceptor is observed in the copolymer (<1 ps) compared to transfer from TFB to F8BT in the blend (tens of ps). This efficient energy transfer in the copolymer is found to be associated with its low fluorescence efficiency (40-45% vs 60-65% for blend) because of the migration of radiative singlet excitons to low-energy states such as triplet and exciplex states that are nonemissive or weakly emissive. The presence of molecular-scale tfb-f8-bt interfaces in the copolymer, however, does not hinder an efficient transport of charge carriers at high drive voltages. Instead, it provides a better balance of charge carriers inside the device, which leads to slower decay of the device efficiency and thus more stable light-emitting diodes with increasing voltage than the blend devices. These distinctive optoelectronic and charge transport properties observed at different organic-organic semiconductor interfaces will provide useful input for the design rules of conjugated polymers required for improved molecular electronics.

Effects of a heavy atom on molecular order and morphology in conjugated polymer:fullerene photovoltaic blend thin films and devices.

We study the molecular order and morphology in poly(3-hexylthiophene) (P3HT) and poly(3-hexylselenophene) (P3HS) thin films and their blends with [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM). We find that substitution of the sulfur atoms in the thiophene rings of P3HT by heavy selenium atoms increases the tendency of the molecules to form better ordered phase; interestingly, their overall fraction of ordered phase is much lower than that of P3HT-based films. The higher tendency of P3HS molecules to order (aggregate) is consistent with more planar chain conformation simulated. The lower fraction of ordered phase (or the higher fraction of disordered phase) in P3HS-based films is clearly identified by in-plane skeleton Raman modes under resonant excitation conditions, such as a smaller ratio of the C═C modes associated with the ordered (∼1422 cm(-1)) and disordered (∼1446 cm(-1)) phases (I(1422 cm(-1))/I(1446 cm(-1)) = 1.4 for P3HS and 0.6 for P3HS:PCBM), compared with P3HT-based films (I(1449 cm(-1))/I(1470 cm(-1)) = 2.5 for P3HT and 1.0 for P3HT:PCBM) and a larger Raman dispersion of the C═C mode: P3HS (17 cm(-1)) versus P3HT (6 cm(-1)) and P3HS:PCBM (36 cm(-1)) versus P3HT:PCBM films (23 cm(-1)). The higher fraction of disordered phase in P3HS prevents the formation of micrometer-sized PCBM aggregates in blend films during thermal annealing. Importantly, this lower fraction but better quality of ordered phase in P3HS molecules strongly influences P3HS:PCBM photovoltaic performance, producing smaller short-circuit current (J(sc)) in pristine devices, but significantly larger increase in J(sc) after annealing compared to P3HT:PCBM devices. Our results clarify the effects of heavy atom substitution in low band gap polymers and their impact on blend morphology and device performance. Furthermore, our study clearly demonstrates resonant Raman spectroscopy as a simple, but powerful, structural probe which provides important information about "fraction/quantity of ordered phase" of molecules, not easily accessible using traditional X-ray-based techniques.