Chemical Conformation Induced Transport Carrier Switching in Molecular Junction based on Carboxylic-Terminated Thiol Molecules.

The paper demonstrates the effect of the chemical conformation of the -COOH group on the transport characteristic including conductance, rectification, and length effect in molecular junctions (MJs) formed by self-assembled monolayers of carboxylic-terminated thiol molecules. For an alkyl chain shorter than C11, the transport mechanism was attributed to a direct off-resonant tunneling of a hole carrier, located at the Au-S interface, whereas a hopping mechanism was assigned to the alkyl chain longer than the C11 chain located at the -COOH group. The hopping mechanism may be operated by electron transport associated with the breaking of the -OH bonding likely driven by a voltage. Importantly, at the C11 alkyl chain, we observed that the transport carrier operating in MJs could change from a hole carrier into an electron carrier. The result strongly proves that the chemical conformation should be considered in analyzing molecular electronics and provides a basis for the rational design of molecular electronic devices.

Hopping Conductance in Molecular Wires Exhibits a Large Heavy-Atom Kinetic Isotope Effect.

We report a large kinetic isotope effect (KIE) for intramolecular charge transport in π-conjugated oligophenyleneimine (OPI) molecules connected to Au electrodes. 13C and 15N substitution on the imine bonds produces a conductance KIE of ∼2.7 per labeled atom in long OPI wires >4 nm in length, far larger than typical heavy-atom KIEs for chemical reactions. In contrast, isotopic labeling in shorter OPI wires <4 nm does not produce a conductance KIE, consistent with a direct tunneling mechanism. Temperature-dependent measurements reveal that conductance for a long 15N-substituted OPI wire is activated, and we propose that the exceptionally large conductance KIEs imply a thermally assisted, through-barrier polaron tunneling mechanism. In general, observation of large conductance KIEs opens up considerable opportunities for understanding microscopic conduction mechanisms in π-conjugated molecules.

Highly Efficient Long-Range Electron Transport in a Viologen-Based Molecular Junction.

Thin layers of viologen-based oligomers with thicknesses between 3 and 14 nm were deposited on gold electrodes by electrochemical reduction of a diazonium salt, and then a Ti/Au top contact was applied to complete a solid-state molecular junction (MJ). MJs show symmetric J- V curves and highly efficient long-range transport, with an attenuation factor as small as 0.25 nm-1. This is attributed both to the fact that the viologen LUMO energy lies between the energies of the Fermi levels of the two contacts and to strong electronic coupling between molecules and contacts. As a consequence, resonant tunneling is likely to be the dominant transport mechanism within these MJs, but the temperature dependence of the transport properties suggests that activated redox hopping plays a role at high temperature.

Robust Bipolar Light Emission and Charge Transport in Symmetric Molecular Junctions.

Molecular junctions consisting of a Ru(bpy)3 oligomer between conducting carbon contacts exhibit an exponential dependence of junction current on molecular layer thickness (d) similar to that observed for other aromatic devices when d < 4 nm. However, when d > 4 nm, a change in transport mechanism occurs which coincides with light emission in the range of 600-900 nm. Unlike light emission from electrochemical cells or solid-state films containing Ru(bpy)3, emission is bipolar, occurs in vacuum, has rapid rise time (<5 ms), and persists for >10 h. Light emission directly indicates simultaneous hole and electron injection and transport, possibly resonant due to the high electric field present (>3 MV/cm). Transport differs fundamentally from previous tunneling and hopping mechanisms and is a clear "molecular signature" relating molecular structure to electronic behavior.

Control of Rectification in Molecular Junctions: Contact Effects and Molecular Signature.

Thin layers of oligomers with thickness between 7 and 9 nm were deposited on flat gold electrode surfaces by electrochemical reduction of diazonium reagents, then a Ti(2 nm)/Au top contact was applied to complete a solid-state molecular junction. The molecular layers investigated included donor molecules with relatively high energy HOMO, molecules with high HOMO-LUMO gaps and acceptor molecules with low energy LUMO and terminal alkyl chain. Using an oligo(bisthienylbenzene) based layer, a molecule whose HOMO energy level in a vacuum is close to the Fermi level of the gold bottom electrode, the devices exhibit robust and highly reproducible rectification ratios above 1000 at low voltage (2.7 V). Higher current is observed when the bottom gold electrode is biased positively. When the molecular layer is based on a molecule with a high HOMO-LUMO gap, i.e., tetrafluorobenzene, no rectification is observed, while the direction of rectification is reversed if the molecular layer consists of naphtalene diimides having low LUMO energy level. Rectification persisted at low temperature (7 K), and was activationless between 7 and 100 K. The results show that rectification is induced by the asymmetric contact but is also directly affected by orbital energies of the molecular layer. A "molecular signature" on transport through layers with thicknesses above those used when direct tunneling dominates is thus clearly observed, and the rectification mechanism is discussed in terms of Fermi level pinning and electronic coupling between molecules and contacts.

Probing the Effect of the Density of Active Molecules in Large-Area Molecular Junctions.

The effect of the density of active molecules in molecular junctions (MJs) has been investigated by using a host/guest strategy. Mixed layers consisting of oligothiophene (BTB) encapsulated by ß-cyclodextrin (BTB@ß-CD) were generated. Cyclodextrins were then removed, and the pinholes generated were filled with BTB to obtain BTB@BTB films. MJs based on mixed BTB@ß-CD and BTB@BTB layers, as well as single-component BTB MJs, were compared. The variation of ln J vs thickness is similar for all systems while the Jo of BTB@ß-CD MJs is 20 times lower than that of BTB MJs. After ß-cyclodextrin has been removed, and the pinholes filled, Jo increases and reaches the same value as for the BTB MJs, showing that the conductance scales with the number of active molecules. This strategy provides a unique method for investigating molecular interactions in direct tunneling MJs as well as the possibility of fabricating new functionalized MJs based on mixed layers.

Quantitative analysis of weak current rectification in molecular tunnel junctions subject to mechanical deformation reveals two different rectification mechanisms for oligophenylene thiols versus alkane thiols.

Metal-molecule-metal junctions based on alkane thiol (CnT) and oligophenylene thiol (OPTn) self-assembled monolayers (SAMs) and Au electrodes are expected to exhibit similar electrical asymmetry, as both junctions have one chemisorbed Au-S contact and one physisorbed, van der Waals contact. Asymmetry is quantified by the current rectification ratio RR apparent in the current-voltage (I-V) characteristics. Here we show that RR < 1 for CnT and RR > 1 for OPTn junctions, in contrast to expectation, and further, that RR behaves very differently for CnT and OPTn junctions under mechanical extension using the conducting probe atomic force microscopy (CP-AFM) testbed. The analysis presented in this paper, which leverages results from the previously validated single level model and ab initio quantum chemical calculations, allows us to explain the puzzling experimental findings for CnT and OPTn in terms of different current rectification mechanisms. Specifically, in CnT-based junctions the Stark effect creates the HOMO level shifting necessary for rectification, while for OPTn junctions the level shift arises from position-dependent coupling of the HOMO wavefunction with the junction electrostatic potential profile. On the basis of these mechanisms, our quantum chemical calculations allow quantitative description of the impact of mechanical deformation on the measured current rectification. Additionally, our analysis, matched to experiment, facilitates direct estimation of the impact of intramolecular electrostatic screening on the junction potential profile. Overall, our examination of current rectification in benchmark molecular tunnel junctions illuminates key physical mechanisms at play in single step tunneling through molecules, and demonstrates the quantitative agreement that can be obtained between experiment and theory in these systems.