Three-dimensional optical trapping and orientation of microparticles for coherent X-ray diffraction imaging.

Optical trapping has been implemented in many areas of physics and biology as a noncontact sample manipulation technique to study the structure and dynamics of nano- and mesoscale objects. It provides a unique approach for manipulating microscopic objects without inducing undesired changes in structure. Combining optical trapping with hard X-ray microscopy techniques, such as coherent diffraction imaging and crystallography, provides a nonperturbing environment where electronic and structural dynamics of an individual particle in solution can be followed in situ. It was previously shown that optical trapping allows the manipulation of micrometer-sized objects for X-ray fluorescence imaging. However, questions remain over the ability of optical trapping to position objects for X-ray diffraction measurements, which have stringent requirements for angular stability. Our work demonstrates that dynamic holographic optical tweezers are capable of manipulating single micrometer-scale anisotropic particles in a microfluidic environment with the precision and stability required for X-ray Bragg diffraction experiments-thus functioning as an "optical goniometer." The methodology can be extended to a variety of X-ray experiments and the Bragg coherent diffractive imaging of individual particles in solution, as demonstrated here, will be markedly enhanced with the advent of brighter, coherent X-ray sources.

Multifunctional UV and Gas Sensors Based on Vertically Nanostructured Zinc Oxide: Volume Versus Surface Effect.

This article reports that it is possible to make multifunctional sensing devices with ZnO infiltrated polymers while the sensing interactions could occur throughout the polymer. As such, we find that infiltrated devices with SU-8 polymer can result in highly sensitive UV sensors. Mesh dielectric core devices were found to make sensitive gas sensors with a better than 5 ppm sensitivity for formaldehyde and NO2. A new type of p-n junction device is further demonstrated that is sensitive to UV illumination, thus making it an enhanced UV sensor. Sensing devices relying on volume interactions, such as light absorption, can significantly benefit from the infiltrated polymer. In contrast, devices that rely on surface interactions, such as gas sensors, do not gain performance in any significant way with or without the infiltrated polymer.

Gigahertz Acoustic Vibrations of Elastically Anisotropic Indium-Tin-Oxide Nanorod Arrays.

Active control of light is important for photonic integrated circuits, optical switches, and telecommunications. Coupling light with acoustic vibrations in nanoscale optical resonators offers optical modulation capabilities with high bandwidth and small footprint. Instead of using noble metals, here we introduce indium-tin-oxide nanorod arrays (ITO-NRAs) as the operating media and demonstrate optical modulation covering the visible spectral range (from 360 to 700 nm) with ∼20 GHz bandwidth through the excitation of coherent acoustic vibrations in ITO-NRAs. This broadband modulation results from the collective optical diffraction by the dielectric ITO-NRAs, and a high differential transmission modulation up to 10% is achieved through efficient near-infrared, on-plasmon-resonance pumping. By combining the frequency signatures of the vibrational modes with finite-element simulations, we further determine the anisotropic elastic constants for single-crystalline ITO, which are not known for the bulk phase. This technique to determine elastic constants using coherent acoustic vibrations of uniform nanostructures can be generalized to the study of other inorganic materials.

Development characteristics of polymethyl methacrylate in alcohol/water mixtures: a lithography and Raman spectroscopy study.

Poly methyl methacrylate (PMMA) is the most widely used resist in electron beam lithography. This paper reports on a lithography and Raman spectroscopy study of development characteristics of PMMA in methanol, ethanol and isopropanol mixtures with water as developers. We have found that ethanol/water mixtures at a 4:1 volume ratio are an excellent, high resolution, non-toxic developer for exposed PMMA. We have also found that the proper methodology to use so that contrast data can be compared to techniques used in polymer science is not to rinse the developed resist but to immediately dry with nitrogen. Our results show how powerful simple lithographic techniques can be used to study ternary polymer solvent solutions when compared to other techniques used in the literature. Raman data show that both tightly bonded -OH groups and non-hydrogen bonded -OH groups play a role in the development of PMMA. Tightly hydrogen bonded -OH groups show pure Lorentzian Raman absorption only in the concentration ranges where ethanol/water and IPA/water mixtures are effective developers of PMMA, pointing to possible ordering or reduced amorphization due to the liquid state. The impact of understanding these interactions may open doors to a new developers of other electron beam resists that can reduce the toxicity of the waste stream.

Plasmonic amplifiers: engineering giant light enhancements by tuning resonances in multiscale plasmonic nanostructures.

The unique ability of plasmonic nanostructures to guide, enhance, and manipulate subwavelength light offers multiple novel applications in chemical and biological sensing, imaging, and photonic microcircuitry. Here the reproducible, giant light amplification in multiscale plasmonic structures is demonstrated. These structures combine strongly coupled components of different dimensions and topologies that resonate at the same optical frequency. A light amplifier is constructed using a silver mirror carrying light-enhancing surface plasmons, dielectric gratings forming distributed Bragg cavities on top of the mirror, and gold nanoparticle arrays self-assembled into the grating grooves. By tuning the resonances of the individual components to the same frequency, multiple enhancement of the light intensity in the nanometer gaps between the particles is achieved. Using a monolayer of benzenethiol molecules on this structure, an average SERS enhancement factor ∼108 is obtained, and the maximum enhancement in the interparticle hot-spots is ∼3 × 10¹°, in good agreement with FDTD calculations. The high enhancement factor, large density of well-ordered hot-spots, and good fidelity of the SERS signal make this design a promising platform for quantitative SERS sensing, optical detection, efficient solid state lighting, advanced photovoltaics, and other emerging photonic applications.

The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns.

We present a set of universal curves that predict the range and intensity of backscattered electrons which can be used in conjunction with electron beam lithography to create high fidelity nanoscale patterns. The experimental method combines direct write dose, backscattered dose, and a self-reinforcing pattern geometry to measure the dose provided by backscattered electrons to a nanoscale volume on the substrate surface at various distances from the electron source. Electron beam lithography is used to precisely control the number and position of incident electrons on the surface of the material. Atomic force microscopy is used to measure the height of the negative electron beam lithography resist. Our data shows that the range and the intensity of backscattered electrons can be predicted using the density and the atomic number of any solid material, respectively. The data agrees with two independent Monte Carlo simulations without any fitting parameters. These measurements are the most accurate electron range measurements to date.

Highly sensitive room temperature carbon monoxide detection using SnO2 nanoparticle-decorated semiconducting single-walled carbon nanotubes.

We demonstrate a practical sensing platform, consisting of SnO(2) nanoparticle-decorated semiconducting single-walled carbon nanotubes assembled on gold electrodes via a dielectrophoretic process, for highly sensitive CO detection with fast response at room temperature. The highest sensitivity obtained was 0.27 and the response time was ∼2 s for 100 ppm CO detection. The lower detection limit was ∼1 ppm. These results indicate that the sensing performance of our device is among the best of CO sensors implemented with SWNTs. Further, we observed a significant increase in sensitivity to 0.67 after subjecting the device to an electrical breakdown at 8 V. We also proposed a theoretical model to reveal the relationship between the sensitivity and the gas concentration. The new model not only resulted in a nice fit to our data, but also allowed us to estimate the contact resistance between an individual SWNT and the gold electrodes.

Geometric control of rippling in supported polymer nanolines.

We study the swelling behavior of finlike polymer line gratings supported on a rigid substrate and show that the edge-supported polymer laminae undergo a rippling instability with a well-defined ripple wavelength λ transverse to the plane of the solid supporting substrate and a ripple amplitude that monotonically decreases from its maximum at the free-edge. These ripple patterns develop due to inhomogeneous compressive strains that arise from the geometric constraints that progressively suppress swelling near the supporting substrate where the laminae are clamped. By experimentally examining the influence of swelling strain and pattern geometry on the observed rippling instability, we find that the ripple wavelength λ scales with line width w for sufficiently long gratings, which is consistent with a simple theory. These trends were validated for polymer nanoline test patterns having w between (50 to 250) nm and a height-to-width aspect-ratio in the range 0.5 to 5. Our results suggest that line geometry, rather than material properties, governs the onset of rippling and suggest simple rules for their control.

Nanopatterning of ultrananocrystalline diamond nanowires.

We report the fabrication of horizontally aligned ultrananocrystalline diamond (UNCD) nanowires (NWs) via two different approaches. First, with the top-down approach by using electron beam lithography (EBL) and reactive ion etching (RIE) with a photo resist layer as an etch mask. Using this approach, we demonstrate fabrication of 50 µm long UNCD NWs with widths as narrow as 40 nm. We further present an alternative approach to grow UNCD NWs at pre-defined positions through a selective seeding process. No RIE was needed either to etch the NWs or to remove the mask. In this case, we achieved UNCD NWs with lengths of 50 µm and smallest width of 90 nm respectively. Characterization of these nanowires by using scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows that the UNCD NWs are well defined and fully released, with no indication of residual stress. Characterization using visible and ultraviolet (UV) Raman spectroscopy indicates that in both fabrication approaches, UNCD NWs maintain their intrinsic diamond structure.

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis.

Resistance switching in metal-insulator-metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. In this work, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ∼15 nm thick ultraporous (pore size ∼5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al2O3 system, that the ultraporous films result in ultrahigh on/off ratio (>109) at ultralow switching voltages (∼±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 104 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.

Reduced graphene oxide for room-temperature gas sensors.

We demonstrated high-performance gas sensors based on graphene oxide (GO) sheets partially reduced via low-temperature thermal treatments. Hydrophilic graphene oxide sheets uniformly suspended in water were first dispersed onto gold interdigitated electrodes. The partial reduction of the GO sheets was then achieved through low-temperature, multi-step annealing (100, 200, and 300 degrees C) or one-step heating (200 degrees C) of the device in argon flow at atmospheric pressure. The electrical conductance of GO was measured after each heating cycle to interpret the level of reduction. The thermally-reduced GO showed p-type semiconducting behavior in ambient conditions and was responsive to low-concentration NO2 and NH3 gases diluted in air at room temperature. The sensitivity can be attributed mainly to the electron transfer between the reduced GO and adsorbed gaseous molecules (NO2/NH3). Additionally, the contact between GO and the Au electrode is likely to contribute to the overall sensing response because of the adsorbates-induced Schottky barrier variation. A simplified model is used to explain the experimental observations.

Switchable geometric frustration in an artificial-spin-ice-superconductor heterosystem.

Geometric frustration emerges when local interaction energies in an ordered lattice structure cannot be simultaneously minimized, resulting in a large number of degenerate states. The numerous degenerate configurations may lead to practical applications in microelectronics1, such as data storage, memory and logic2. However, it is difficult to achieve very high degeneracy, especially in a two-dimensional system3,4. Here, we showcase in situ controllable geometric frustration with high degeneracy in a two-dimensional flux-quantum system. We create this in a superconducting thin film placed underneath a reconfigurable artificial-spin-ice structure5. The tunable magnetic charges in the artificial-spin-ice strongly interact with the flux quanta in the superconductor, enabling switching between frustrated and crystallized flux quanta states. The different states have measurable effects on the superconducting critical current profile, which can be reconfigured by precise selection of the spin-ice magnetic state through the application of an external magnetic field. We demonstrate the applicability of these effects by realizing a reprogrammable flux quanta diode. The tailoring of the energy landscape of interacting 'particles' using artificial-spin-ices provides a new paradigm for the design of geometric frustration, which could illuminate a path to control new functionalities in other material systems, such as magnetic skyrmions6, electrons and holes in two-dimensional materials7,8, and topological insulators9, as well as colloids in soft materials10-13.

Silicon compatible Sn-based resistive switching memory.

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) - which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO2 or Al2O3)/inert cathode device - possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. Herein, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO2, we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. The time to threshold is shown to be a function of both the voltage stress (Vstress) as well as the initial leakage current (I0) through the device.

Quantitative Three-Dimensional Characterization of Block Copolymer Directed Self-Assembly on Combined Chemical and Topographical Prepatterned Templates.

Characterization of the three-dimensional (3D) structure in directed self-assembly (DSA) of block copolymers is crucial for understanding the complex relationships between the guiding template and the resulting polymer structure so DSA could be successfully implemented for advanced lithography applications. Here, we combined scanning transmission electron microscopy (STEM) tomography and coarse-grain simulations to probe the 3D structure of P2VP-b-PS-b-P2VP assembled on prepatterned templates using solvent vapor annealing. The templates consisted of nonpreferential background and raised guiding stripes that had PS-preferential top surfaces and P2VP-preferential sidewalls. The full 3D characterization allowed us to quantify the shape of the polymer domains and the interface between domains as a function of depth in the film and template geometry and offered important insights that were not accessible with 2D metrology. Sidewall guiding was advantageous in promoting the alignment and lowering the roughness of the P2VP domains over the sidewalls, but incommensurate confinement from the increased topography could cause roughness and intermittent dislocations in domains over the background region at the bottom of the film. The 3D characterization of bridge structures between domains over the background and breaks within domains on guiding lines sheds light on possible origins of common DSA defects. The positional fluctuations of the PS/P2VP interface between domains showed a depth-dependent behavior, with high levels of fluctuations near both the free surface of the film and the substrate and lower fluctuation levels in the middle of the film. This research demonstrates how 3D characterization offers a better understanding of DSA processes, leading to better design and fabrication of directing templates.

Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat.

Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocks of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. The ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.

Directed Self-Assembly of Colloidal Particles onto Nematic Liquid Crystalline Defects Engineered by Chemically Patterned Surfaces.

In exploiting topological defects of liquid crystals as the targeting sites for trapping colloidal objects, previous work has relied on topographic features with uniform anchoring to create defects, achieving limited density and spacing of particles. We report a generalizable strategy to create topological defects on chemically patterned surfaces to assemble particles in precisely defined locations with a tunable interparticle distance at nanoscale dimensions. Informed by experimental observations and numerical simulations that indicate that liquid crystals, confined between a homeotropic-anchoring surface and a surface with lithographically defined planar-anchoring stripes in a homeotropic-anchoring background, display splay-bend deformation, we successfully create pairs of defects and subsequently trap particles with controlled spacing by designing patterns of intersecting stripes aligned at 45° with homeotropic-anchoring gaps at the intersections. Application of electric fields allows for dynamic control of trapped particles. The tunability, responsiveness, and adaptability of this platform provide the opportunities for assembly of colloidal structures toward functional materials.

Large optical nonlinearity of ITO nanorods for sub-picosecond all-optical modulation of the full-visible spectrum.

Nonlinear optical responses of materials play a vital role for the development of active nanophotonic and plasmonic devices. Optical nonlinearity induced by intense optical excitation of mobile electrons in metallic nanostructures can provide large-amplitude, dynamic tuning of their electromagnetic response, which is potentially useful for all-optical processing of information and dynamic beam control. Here we report on the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband, on-plasmon-resonance optical pumping, which enables modulation of the full-visible spectrum with large absolute change of transmission, favourable spectral tunability and beam-steering capability. Furthermore, we observe a transient response in the microsecond regime associated with slow lattice cooling, which arises from the large aspect-ratio and low thermal conductivity of ITO-NRAs. Our results demonstrate that all-optical control of light can be achieved by using heavily doped wide-bandgap semiconductors in their transparent regime with speed faster than that of noble metals.

Effect of Stereochemistry on Directed Self-Assembly of Poly(styrene-b-lactide) Films on Chemical Patterns.

We demonstrated here for the first time that the stereochemistry of polylactide (PLA) blocks affected the assembly behaviors of PS-b-PLA on chemical patterns. Two PS-b-PLA block copolymers, where the PLA block is either racemic (PDLLA) or left-handed (PLLA), were synthesized and directed to assemble on chemical patterns with a wide range of Ls/L0. PS-b-PDLLA was stretched up to 70% on chemical patterns, while PS-b-PLLA was only stretched by 20%. The assembly behavior of PS-b-PDLLA was different from AB diblock copolymer, but similar to that of ABA triblock copolymer. The high stretchability might be attributed to the formation of stereocomplexes in PDLLA blocks. Compared to ABA triblock copolymers, stereocomplexed diblock copolymers have much faster assembly kinetics. This observation provides a new concept to achieve large process windows by the introduction of specific interactions, for example, H-bonding, supramolecular interaction, and sterecomplexation, between polymer chains.

Rewritable artificial magnetic charge ice.

Artificial ices enable the study of geometrical frustration by design and through direct observation. However, it has proven difficult to achieve tailored long-range ordering of their diverse configurations, limiting both fundamental and applied research directions. We designed an artificial spin structure that produces a magnetic charge ice with tunable long-range ordering of eight different configurations. We also developed a technique to precisely manipulate the local magnetic charge states and demonstrate write-read-erase multifunctionality at room temperature. This globally reconfigurable and locally writable magnetic charge ice could provide a setting for designing magnetic monopole defects, tailoring magnonics, and controlling the properties of other two-dimensional materials.

Direct growth of vertically-oriented graphene for field-effect transistor biosensor.

A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring changes in the electrical signal from the FET sensor upon the antibody-antigen binding. The novel biosensor with unique graphene morphology shows high sensitivity (down to ~2 ng/ml or 13 pM) and selectivity towards specific proteins. The PECVD growth of VG presents a one-step and reliable approach to prepare graphene-based electronic biosensors.