1.
Rapid Commun Mass Spectrom
; 32(19): 1746-1750, 2018 10 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-29971856
2.
Nanoscale Res Lett
; 7(1): 558, 2012 Oct 08.
Artículo
en Inglés
| MEDLINE
| ID: mdl-23043754
RESUMEN
We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail.