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RATIONALE: Continuously downscaling integrated circuit devices requires fabrication of shallower p-n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. METHODS: In this study to carry out low-energy implantation into single crystalline silicon and 4H-SiC samples we employ Aln - (n = 1-5) clusters with energy in the range of 5-20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time-of-flight secondary ion mass spectrometry (TOF-SIMS; IONTOF TOF.SIMS-5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. RESULTS: A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. CONCLUSIONS: The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF-SIMS depth profiling of the shallow cluster implantation is feasible.
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The optical and magneto-optical characteristics of KTb3F10 crystals in the transition region of 5D4 â 7F6 4f8 configurations of the Tb3+ ion at temperatures of 90 and 300 K were studied. The schemes of the optical transitions in the KTb3F10 crystals were constructed, and the energies of most of the Stark sublevels of the ground 7F6 and excited 5D4 multiplets of the Tb3+ ion split by the C4v symmetry crystal environment were determined. The presence of three- and two-doublet states in the energy spectra of the Tb3+ion multiplets 7F6 and 5D4, respectively, was established, which is in good agreement with theoretical predictions. The use of the wavefunctions of the Stark sublevels of multiplets split by a tetragonal crystal field and combining in the studied optical transition made it possible to explain some of the magnetic and magneto-optical features observed in the KTb3F10 single crystals.
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In the present study Ar+ cluster ions accelerated by voltages in the range of 5-10 kV are used to irradiate single crystal ZnO substrates and nanorods to fabricate self-assembled surface nanoripple arrays. The ripple formation is observed when the incidence angle of the cluster beam is in the range of 30-70°. The influence of incidence angle, accelerating voltage, and fluence on the ripple formation is studied. Wavelength and height of the nanoripples increase with increasing accelerating voltage and fluence for both targets. The nanoripples formed on the flat substrates remind of aeolian sand ripples. The ripples formed at high ion fluences on the nanorod facets resemble well-ordered parallel steps or ribs. The more ordered ripple formation on nanorods can be associated with the confinement of the nanorod facets in comparison with the quasi-infinite surface of the flat substrates.
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In this work an Ar+ cluster ion beam with energy in the range of 10-70 keV and dose of 7.2 × 1014-2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.
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A series of novel Fe-Cd co-doped ZnO nanoparticle based photocatalysts are successfully synthesized by sol-gel route and characterized using scanning electron microscopy (SEM), energy dispersive X-ray emission (EDX), transmission electron microscopy (TEM), X-ray diffraction (XRD), UV-Vis spectroscopy, X-ray photoelectron spectroscopy (XPS), and Brunauer-Emmett-Teller (BET) techniques. The photocatalytic activity of ZnO nanoparticles doped with various atomic weight fraction of Fe and Cd has been investigated under visible light irradiation using the Methylene Blue and Rhodamine B dye in aqueous solution. The FeCd (2%):ZnO (ZFC-1) exhibit the highest photocatalytic activity in terms of rate constant as KMB = 0.01153 min-1 and KRhB = 0.00916 min-1). Further, the re-usability of the ZFC-1 photocatalyst is studied which confirms that it can be reused up to five times with nearly negligible loss of the photocatalytic efficiency. Moreover, the role of photoactive species investigated using a radical scavenger technique. The present investigations show that the doping concentration plays significant role in photocatalytic performance. The visible light absorption shown by Fe-Cd co-doped ZnO nanoparticles is much higher than that of undoped body probably due to co-doping, and the charge carrier recombination is decreased effectively which yields a higher photocatalytic performance. The mechanism for the enhancement of photocatalytic activity under visible light irradiation is also proposed.
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Transition metal dichalcogenide materials have been considered as promising anode materials for rechargeable sodium-ion batteries because of their high specific capacity and low cost. Here, we demonstrate an iron sulfide Fe3S4 as a new anode material for a rechargeable sodium-ion battery. The involved conversion mechanism has been proved when the as-prepared Fe3S4 was used as the host material for sodium storage. Remarkably, a compound FeS x with quantum size generated by conversion reaction overcame the kinetic and thermodynamic constraints of chemical conversion to achieve superior cycling and rate capability. As a result, the as-prepared Fe3S4 electrode delivers a high reversible specific capacity of 548 mA h g-1 at 0.2 A g-1, together with an excellent cycling stability of 275 mA h g-1 after 3500 cycles at 20 A g-1.
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A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.