RESUMEN
High-power, narrow-linewidth light sources in the visible and UV spectra are in growing demand, particularly as quantum information and sensing research proliferates. Vertical external-cavity surface-emitting lasers (VECSELs) with intra-cavity frequency conversion are emerging as an attractive platform to fill these needs. Using such a device, we demonstrate 3.5 MHz full-width half-maximum Rydberg-state spectroscopy via electromagnetically induced transparency (EIT). The laser's 690 mW of output power at a wavelength of 475 nm enables large Rabi frequencies and strong signal-to-noise ratio in shorter measurement times. In addition, we characterize the frequency stability of the VECSEL using the delayed self-heterodyne technique and direct comparison with a commercial external-cavity diode laser (ECDL). We measure the pre-doubled light's Lorentzian linewidth to be 2π × 5.3(2) kHz, and the total linewidth to be 2π × 23(2) kHz. These measurements provide evidence that intra-cavity frequency-doubled VECSELs can perform precision spectroscopy at and below the MHz level, and are a promising tool for contemporary, and future, quantum technologies.
RESUMEN
High-power and narrow-linewidth laser light is a vital tool for atomic physics, being used for example in laser cooling and trapping and precision spectroscopy. Here we produce Watt-level laser radiation at 457.75 nm and 460.86 nm of respective relevance for the cooling transitions of cadmium and strontium atoms. This is achieved via the frequency doubling of a kHz-linewidth vertical-external-cavity surface-emitting laser (VECSEL), which is based on a novel gain chip design enabling lasing at > 2 W in the 915-928 nm region. Following an additional doubling stage, spectroscopy of the 1S0 â 1P1 cadmium transition at 228.87 nm is performed on an atomic beam, with all the transitions from all eight natural isotopes observed in a single continuous sweep of more than 4 GHz in the deep ultraviolet. The absolute value of the transition frequency of 114Cd and the isotope shifts relative to this transition are determined, with values for some of these shifts provided for the first time.
RESUMEN
A vertical external-cavity surface-emitting laser (VECSEL) with a twisted-mode configuration is demonstrated. This architecture is particularly advantageous for power scaling of single-frequency VECSELs employing multiple gain mirrors in folded cavities. In such a configuration, some of the gain mirrors are inherently at the fold, and the lasing spectrum becomes unstable. This is caused by four waves interfering, destabilizing the standing wave pattern at the quantum wells. We show that the lasing spectrum can be narrowed by employing a twisted-mode configuration, which stabilizes the standing-wave pattern at the gain mirror. Furthermore, single-frequency output of more than 10 W at 1178 nm is demonstrated for a VECSEL employing two gain mirrors in a standing-wave cavity. In comparison, the output power for operation with one gain mirror only was 7.4 W when operating in single frequency. The choice of wavelength for the work reported in this paper is motivated by the opportunity to demonstrate compact VECSEL-based guide star lasers for adaptive optics via frequency doubling to the sodium D2 resonance at 589 nm.
RESUMEN
We studied and compared single-side pumping (SSP) and double-side pumping (DSP) of a semiconductor membrane external-cavity surface-emitting laser (MECSEL). The MECSEL-active region was based on an AlGaAs quantum well structure embedded between two silicon carbide (SiC) wafer pieces that were used as transparent intra-cavity (IC) heat spreaders creating a symmetrical cooling environment. The gain structure targeted emission at 780 nm, a wavelength region that is important for many applications, and where the development of high-brightness high-power laser sources is gaining more momentum. By DSP at 20°C heat sink temperature, we could reduce the laser threshold from 0.79 to 0.69 W of absorbed pump power, while the maximum output power was increased from 3.13 to 3.22 W. The differential efficiency was improved from 31.9% to 34.4%, which represents a record value for SiC-cooled vertically emitting semiconductor lasers. The improvements are enabled by a reduced thermal resistance of the gain element by 9% compared to SSP. The beam quality was measured to be M2<1.09. Finally, we demonstrate a maximum tuning range from 767 to 811 nm. This wavelength range was not addressed by any MECSEL or vertical external-cavity surface-emitting laser device before and extends the available wavelengths for semiconductor based high-quality beam and high-power laser sources to a wavelength window relevant for quantum technology, spectroscopy, or medicine.
RESUMEN
An optically pumped vertical-external-cavity surface-emitting laser (VECSEL) for direct emission in the 740-790 nm wavelength region is reported. The gain structure is based on 12 AlGaAs quantum wells. We demonstrate wavelength tuning between 747 nm and 788 nm and free-running operation with a maximum power of 4.24 W (pump power limited) for a heat sink temperature of 14°C. This laser system addresses a spectral gap not currently covered by VECSEL technology and represents the most powerful VECSEL reported within the 7XX-nm wavelength region.
RESUMEN
The longest wavelength (~1.4 µm) emitted by a diamond Raman laser pumped by a semiconductor disk laser (SDL) is reported. The output power of the intracavity-pumped Raman laser reached a maximum of 2.3 W with an optical conversion efficiency of 3.4% with respect to the absorbed diode pump power. Narrow Stokes emission (FWHM <0.1 nm) was attained using etalons to limit the fundamental spectrum to a single etalon peak. Tuning of the Raman laser over >40 nm was achieved via rotation of an intracavity birefringent filter that tuned the SDL oscillation wavelength.
RESUMEN
A high-power optically-pumped vertical-external-cavity surface-emitting laser (VECSEL) generating 10.5 W of cw output power at 615 nm is reported. The gain mirror incorporated 10 GaInNAs quantum wells and was designed to have an emission peak in the 1230 nm range. The fundamental emission was frequency doubled to the red spectral range by using an intra-cavity nonlinear LBO crystal. The maximum optical-to-optical conversion efficiency was 17.5%. The VECSEL was also operated in pulsed mode by directly modulating the pump laser to produce light pulses with duration of ~1.5 µs. The maximum peak power for pulsed operation (pump limited) was 13.8 W. This corresponded to an optical-to-optical conversion efficiency of 20.4%.
RESUMEN
A proof-of-principle study of a 1.97-µm Tm:Lu2O3 ceramic disk laser, intracavity pumped by a 1.2-µm semiconductor disk laser, is presented. The demonstrated concept allows for improved pump absorption and takes advantage of the broad wavelength coverage provided by semiconductor disk laser technology. For thin disk lasers the small thickness of the gain element typically leads to inefficient pump light absorption. This problem is usually solved by using a complex multi-pass pump arrangement. In this study we address this challenge with a new laser concept of an intracavity pumped ceramic thin disk laser. The output power at 1.97 µm was limited to 250 mW due to heat spreader-less mounting scheme of the ceramic gain disk.