RESUMEN
The energy distribution functions of ions in the cathodic arc plasma using composite AlCr cathodes were measured as a function of the background gas pressure in the range 0.5 to 3.5 Pa for different cathode compositions and gas atmospheres. The most abundant aluminium ions were Al+ regardless of the background gas species, whereas Cr2+ ions were dominating in Ar and N2 and Cr+ in O2 atmospheres. The energy distributions of the aluminium and chromium ions typically consisted of a high-energy fraction due to acceleration in the expanding plasma plume from the cathode spot and thermalised ions that were subjected to collisions in the plasma cloud. The fraction of the latter increased with increasing background gas pressure. Atomic nitrogen and oxygen ions showed similar energy distributions as the aluminium and chromium ions, whereas the argon and molecular nitrogen and oxygen ions were formed at greater distance from the cathode spot and thus less subject to accelerating gradients. In addition to the positively charged metal and gas ions, negatively charged oxygen and oxygen-containing ions were observed in O2 atmosphere. The obtained results are intended to provide a comprehensive overview of the ion energies and charge states in the arc plasma of AlCr composite cathodes in different gas atmospheres as such plasmas are frequently used to deposit thin films and coatings.
RESUMEN
The oxidation resistance of Hf0.28B0.72 and Hf0.11Al0.20B0.69 thin films was investigated comparatively at 700 °C for up to 8 h. Single-phase solid solution thin films were co-sputtered from HfB2 and AlB2 compound targets. After oxidation at 700 °C for 8 h an oxide scale thickness of 31 ± 2 nm was formed on Hf0.11Al0.20B0.69 which corresponds to 14% of the scale thickness measured on Hf0.28B0.72. The improved oxidation resistance can be rationalized based on the chemical composition and the morphology of the formed oxide scales. On Hf0.28B0.72 the formation of a porous, O, Hf, and B-containing scale and the formation of crystalline HfO2 is observed. Whereas on Hf0.11Al0.20B0.69 a dense, primarily amorphous scale containing O, Al, B as well as approximately 3 at% of Hf forms, which reduces the oxidation kinetics significantly by passivation. Benchmarking Hf0.11Al0.20B0.69 with Ti-Al-based boride and nitride thin films with similar Al concentrations reveals superior oxidation behavior of the Hf-Al-based thin film. The incorporation of few at% of Hf in the oxide scale decelerates oxidation kinetics at 700 °C and leads to a reduction in oxide scale thickness of 21% and 47% compared to Ti0.12Al0.21B0.67 and Ti0.27Al0.21N0.52, respectively. Contrary to Ti-Al-based diborides, Hf0.11Al0.20B0.69 shows excellent oxidation behavior despite B-richness.
RESUMEN
A vacancy-ordered MXene, Mo1.33CTz, obtained from the selective etching of Al and Sc from the parent i-MAX phase (Mo2/3Sc1/3)2AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (Mo2/3Y1/3)2AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY2.3 alloy instead of elemental Al and Y for the synthesis of (Mo2/3Y1/3)2AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, Mo3Al2C. Furthermore, through a modified etching procedure, we obtain a Mo1.33CTz MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm-3) and gravimetric (436 F g-1) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the Mo1.33CTz MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications.
RESUMEN
The demand to discover new materials is scientifically as well as industrially a continuously present topic, covering all different fields of application. The recent scientific work on thin film materials has shown, that especially for nitride-based protective coatings, computationally-driven understanding and modelling serves as a reliable trend-giver and can be used for target-oriented experiments. In this study, semi-automated density functional theory (DFT) calculations were used, to sweep across transition metal diborides in order to characterize their structure, phase stability and mechanical properties. We show that early transition metal diborides (TiB2, VB2, etc.) tend to be chemically more stable in the AlB2 structure type, whereas late transition metal diborides (WB2, ReB2, etc.) are preferably stabilized in the W2B5-x structure type. Closely related, we could prove that point defects such as vacancies significantly influence the phase stability and even can reverse the preference for the AlB2 or W2B5-x structure. Furthermore, investigations on the brittle-ductile behavior of the various diborides reveal, that the metastable structures are more ductile than their stable counterparts (WB2, TcB2, etc.). To design thin film materials, e.g. ternary or layered systems, this study is important for application oriented coating development to focus experimental studies on the most perspective systems.