1.
Nano Lett
; 14(7): 3864-8, 2014 Jul 09.
Artículo
en Inglés
| MEDLINE
| ID: mdl-24915057
RESUMEN
Effective negative capacitance has been postulated in ferroelectrics because there is a hysteresis in plots of polarization-electric field. Compelling experimental evidence of effective negative capacitance is presented here at room temperature in engineered devices, where it is stabilized by the presence of a paraelectric material. In future integrated circuits, the incorporation of such negative capacitance into MOSFET gate stacks would reduce the subthreshold slope, enabling low power operation and reduced self-heating.