Strong and ductile titanium-oxygen-iron alloys by additive manufacturing.

Titanium alloys are advanced lightweight materials, indispensable for many critical applications1,2. The mainstay of the titanium industry is the α-ß titanium alloys, which are formulated through alloying additions that stabilize the α and ß phases3-5. Our work focuses on harnessing two of the most powerful stabilizing elements and strengtheners for α-ß titanium alloys, oxygen and iron1-5, which are readily abundant. However, the embrittling effect of oxygen6,7, described colloquially as 'the kryptonite to titanium'8, and the microsegregation of iron9 have hindered their combination for the development of strong and ductile α-ß titanium-oxygen-iron alloys. Here we integrate alloy design with additive manufacturing (AM) process design to demonstrate a series of titanium-oxygen-iron compositions that exhibit outstanding tensile properties. We explain the atomic-scale origins of these properties using various characterization techniques. The abundance of oxygen and iron and the process simplicity for net-shape or near-net-shape manufacturing by AM make these α-ß titanium-oxygen-iron alloys attractive for a diverse range of applications. Furthermore, they offer promise for industrial-scale use of off-grade sponge titanium or sponge titanium-oxygen-iron10,11, an industrial waste product at present. The economic and environmental potential to reduce the carbon footprint of the energy-intensive sponge titanium production12 is substantial.

Quantifying short-range order using atom probe tomography.

Medium- and high-entropy alloys are an emerging class of materials that can exhibit outstanding combinations of strength and ductility for engineering applications. Computational simulations have suggested the presence of short-range order (SRO) in these alloys, and recent experimental evidence is also beginning to emerge. Unfortunately, the difficulty in quantifying the SRO under different heat treatment conditions has generated much debate on the atomic preferencing and implications of SRO on mechanical properties. Here we develop an approach to measure SRO using atom probe tomography. This method balances the limitations of atom probe tomography with the threshold values of SRO to map the regimes where the required atomistic neighbourhood information is preserved and where it is not. We demonstrate the method with a case study of the CoCrNi alloy and use this to monitor SRO changes induced by heat treatments. These species-specific SRO measurements enable the generation of computational simulations of atomic neighbourhood models that are equivalent to the experiment and can contribute to the further understanding and design of medium- and high-entropy alloys and other materials systems where SRO may occur.

Realization of High Magnetization in Artificially Designed Ni/NiO Layers through Exchange Coupling.

High-magnetization materials play crucial roles in various applications. However, the past few decades have witnessed a stagnation in the discovery of new materials with high magnetization. In this work, Ni/NiO nanocomposites are fabricated by depositing Ni and NiO thin layers alternately, followed by annealing at specific temperatures. Both the as-deposited samples and those annealed at 373 K exhibit low magnetization. However, the samples annealed at 473 K exhibit a significantly enhanced saturation magnetization exceeding 607 emu cm-3 at room temperature, surpassing that of pure Ni (480 emu cm-3 ). Material characterizations indicate that the composite comprises NiO nanoclusters of size 1-2 nm embedded in the Ni matrix. This nanoclustered NiO is primarily responsible for the high magnetization, as confirmed by density functional theory calculations. The calculations also indicate that the NiO clusters are ferromagnetically coupled with Ni, resulting in enhanced magnetization. This work demonstrates a new route toward developing artificial high-magnetization materials using the high magnetic moments of nanoclustered antiferromagnetic materials.

Minimizing and Controlling Hydrogen for Highly Efficient Formamidinium Lead Triiodide Solar Cells.

Formamidinium lead triiodide (FAPbI3) currently holds the record conversion efficiency in the single-junction perovskite solar cell. Iodine management is known to be essential to suppress defect-induced nonradiative losses in FAPbI3 active layers. However, the origin of nonradiative losses and the underlying mechanism of suppressing such losses by iodine-concentration management remain unknown. Here, through first-principles simulation, we demonstrate that native point defects are not responsible for the nonradiative losses in FAPbI3. Instead, hydrogen ions, which can be abundant under both iodine-rich and iodine-poor conditions in FAPbI3, act as efficient nonradiative recombination centers and are proposed to be responsible for the suppressed power conversion efficiency. Moreover, iodine-moderate synthesis conditions can favor the formation of electrically inactive molecular hydrogen, which can dramatically suppress the detrimental hydrogen ions. This work identifies the dominant nonradiative recombination centers in the widely used FAPbI3 layers and rationalizes how the prevailing iodine management reduces the nonradiative losses. Minimizing the unintentional hydrogen incorporation in the perovskite is critical for achieving high device performance.

Effects of thermal annealing on the distribution of boron and phosphorus in p-i-n structured silicon nanocrystals embedded in silicon dioxide.

Thermal annealing temperature and time dictate the microstructure of semiconductor materials such as silicon nanocrystals (Si NCs). Herein, atom probe tomography (APT) and density functional theory (DFT) calculations are used to understand the thermal annealing temperature effects on Si NCs grown in a SiO2matrix and the distribution behaviour of boron (B) and phosphorus (P) dopant atoms. The APT results demonstrate that raising the annealing temperature promotes growth and increased P concentration of the Si NCs. The data also shows that the thermal annealing does not promote the incorporation of B atoms into Si NCs. Instead, B atoms tend to locate at the interface between the Si NCs and SiO2matrix. The DFT calculations support the APT data and reveal that oxygen vacancies regulate Si NC growth and dopant distribution. This study provides the detailed microstructure of p-type, intrinsic, and n-type Si NCs with changing annealing temperature and highlights how B and P dopants preferentially locate with respect to the Si NCs embedded in the SiO2matrix with the aid of oxygen vacancies. These findings will be useful towards future optoelectronic applications.

Strain-mediated bandgap engineering of straight and bent semiconductor nanowires.

Accurate simulation of semiconductor nanowires (NWs) under strain is challenging, especially for bent NWs. Here, we propose a simple yet efficient unit-cell model to simulate strain-mediated bandgap modulation in both straight and bent NWs. This is with consideration that uniaxlly bent NWs experience continuous compressive and tensile strains through their cross-sections. A systematic investigation of a series of III-V and II-VI semiconductors NWs in both wurtzite and zinc blende polytypes is performed using hybrid density functional theory methods. The results reveal three common trend in bandgap evolution upon application of strain. Existing experimental measurements corroborate with our predictions concerning bandgap evolution as well as direct-indirect bandgap transitions upon strain. By examining the variation of previous theoretical studies, our result further highlights the significance of geometrical relaxtion in NW simulation. This simplified model is expected to be applicable to investigations of the electronic, optoelectronic, and sensorial properties of all semiconductor NWs.

Integrative Atom Probe Tomography Using Scanning Transmission Electron Microscopy-Centric Atom Placement as a Step Toward Atomic-Scale Tomography.

Current reconstruction methodologies for atom probe tomography (APT) contain serious geometric artifacts that are difficult to address due to their reliance on empirical factors to generate a reconstructed volume. To overcome this limitation, a reconstruction technique is demonstrated where the analyzed volume is instead defined by the specimen geometry and crystal structure as determined by transmission electron microscopy (TEM) and diffraction acquired before and after APT analysis. APT data are reconstructed using a bottom-up approach, where the post-APT TEM image is used to define the substrate upon which APT detection events are placed. Transmission electron diffraction enables the quantification of the relationship between atomic positions and the evaporated specimen volume. Using an example dataset of ZnMgO:Ga grown epitaxially on c-plane sapphire, a volume is reconstructed that has the correct geometry and atomic spacings in 3D. APT data are thus reconstructed in 3D without using empirical parameters for the reverse projection reconstruction algorithm.

High mobility in α-phosphorene isostructures with low deformation potential.

The exceptionally low deformation potential is proposed as the key determinant for the high carrier mobility in α-phosphorene. This is related to its unique corrugated two-dimensional structure. Herein, we present a systematic first-principles density functional theory study on ten α-phosphorene isostructures by calculating the three key parameters of the carrier mobility. An electron mobility in the armchair direction with a value comparable to α-phosphorene is found in α-PAs, α-PCH, and α-AsCH, due to the structure-caused low deformation potential. The highest carrier mobility is predicted in α-graphane because of a two-orders-of-magnitude smaller deformation potential than the other isostructures. The low deformation potential can be correlated to the separation of charge carriers from neighbouring unit cells. This study highlights a feasible route to generating high mobility materials through deformation potential engineering.

What should the density of amorphous solids be?

A survey of published literature reveals a difference in the density of amorphous and crystalline solids (organic and inorganic) on the order of 10%-15%, whereas for metallic alloys, it is found to be typically less than 5%. Standard geometric models of atomic packing can account for the polymeric and inorganic glasses without requiring changes in interatomic separations (bond lengths). By contrast, the relatively small difference in density between crystalline and glassy metals (and metallic alloys) implies variations in interatomic separations due to merging orbitals giving rise to reduced atomic volumes. To test this hypothesis, quantum density functional theory computations were carried out on ordered and irregular clusters of aluminum. The results point to decreasing interatomic distances with decreasing coordination, from which one can deduce that the geometrical method of random hard sphere packing significantly underestimates the densities of amorphous metallic alloys.

Breaking the icosahedra in boron carbide.

Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and characterization of individual ionization events gives unexpected evidence of the destruction of individual icosahedra. Statistical analyses of the ions created during the field evaporation process have been used to deduce relative atomic bond strengths and show that the icosahedra in boron carbide are not as stable as anticipated. Combined with quantum mechanics simulations, this result provides insight into the structural instability and amorphization of boron carbide. The temporal, spatial, and compositional information provided by atom probe tomography makes it a unique platform for elucidating the relative stability and interactions of primary building blocks in hierarchically crystalline materials.

Assessing the Spatial Accuracy of the Reconstruction in Atom Probe Tomography and a New Calibratable Adaptive Reconstruction.

We define a measure for the accuracy of tomographic reconstruction in atom probe tomography, named here the spatial error index. We demonstrate that this index can be used to compare rigorously the spatial accuracy of various different approaches to the calculation of tomographic reconstruction. This is useful, for example, to evaluate the performance of alternate tomographic reconstruction approaches, and ensures that the comparisons are independent of individual data quality or other instrumental parameters. We then introduce a new "adaptive reconstruction" formalism that uses a progression of reconstruction parameters based on a per-atom correction from the cube root of the inverse of the voltage, along with linear correction factors linked to the evaporation sequence. We apply the measure for spatial accuracy to this new reconstruction protocol.

Introducing a Crystallography-Mediated Reconstruction (CMR) Approach to Atom Probe Tomography.

Current approaches to reconstruction in atom probe tomography produce results that exhibit substantial distortions throughout the analysis depth. This is largely because of the need to apply a multitude of assumptions when estimating the evolution of the tip shape, and other pseudo-empirical reconstruction factors, which vary both across the face of the tip and throughout the analysis depth. We introduce a new crystallography-mediated reconstruction to improve the spatial accuracy and dramatically reduce these in-depth variations. To achieve this, we developed a barycentric transform to directly relate atomic positions in detector space to real space. This is mediated by novel crystallographic analysis techniques, including: (1) calculating the orientation of a crystal directly from the field evaporation map, (2) tracking pole locations throughout the evaporation sequence, and (3) accounting for the evolving tip radius in a manner that removes the dependence on the geometric field factor. By improving the in-depth spatial accuracy of the atom probe reconstruction, a greater accuracy of the atomic neighborhood relationships is available. This is critical in modern materials science and engineering, where an understanding of the solid solution architecture, precipitate dispersions, and descriptions of the interfaces between phases or grains are key inputs to microstructure-property relationships.

Quantitative Determination of How Growth Conditions Affect the 3D Composition of InGaAs Nanowires.

Covering a broad optical spectrum, ternary InxGa1-xAs nanowires, grown by bottom-up methods, have been receiving increasing attention due to the tunability of the bandgap via In composition modulation. However, inadequate knowledge about the correlation between growth and properties restricts our ability to take advantage of this phenomenon for optoelectronic applications. Here, three different InGaAs nanowires were grown under different experimental conditions and atom probe tomography was used to quantify their composition, allowing the direct observation of the nanowire composition associated with the different growth conditions.

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

Correlating Atom Probe Crystallographic Measurements with Transmission Kikuchi Diffraction Data.

Correlative microscopy approaches offer synergistic solutions to many research problems. One such combination, that has been studied in limited detail, is the use of atom probe tomography (APT) and transmission Kikuchi diffraction (TKD) on the same tip specimen. By combining these two powerful microscopy techniques, the microstructure of important engineering alloys can be studied in greater detail. For the first time, the accuracy of crystallographic measurements made using APT will be independently verified using TKD. Experimental data from two atom probe tips, one a nanocrystalline Al-0.5Ag alloy specimen collected on a straight flight-path atom probe and the other a high purity Mo specimen collected on a reflectron-fitted instrument, will be compared. We find that the average minimum misorientation angle, calculated from calibrated atom probe reconstructions with two different pole combinations, deviate 0.7° and 1.4°, respectively, from the TKD results. The type of atom probe and experimental conditions appear to have some impact on this accuracy and the reconstruction and measurement procedures are likely to contribute further to degradation in angular resolution. The challenges and implications of this correlative approach will also be discussed.

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires.

Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.

Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution.

Reversible ferroelectric domain (FD) manipulation with a high spatial resolution is critical for memory storage devices based on thin film ferroelectric materials. FD can be manipulated using techniques that apply heat, mechanical stress, or electric bias. However, these techniques have some drawbacks. Here we propose to use an electron beam with an omnidirectional electric field as a tool for erasable stable ferroelectric nanodomain manipulation. Our results suggest that local accumulation of charges contributes to the local electric field that determines domain configurations.

Determination of Young's Modulus of Ultrathin Nanomaterials.

Determination of the elastic modulus of nanostructures with sizes at several nm range is a challenge. In this study, we designed an experiment to measure the elastic modulus of amorphous Al2O3 films with thicknesses varying between 2 and 25 nm. The amorphous Al2O3 was in the form of a shell, wrapped around GaAs nanowires, thereby forming an effective core/shell structure. The GaAs core comprised a single crystal structure with a diameter of 100 nm. Combined in situ compression transmission electron microscopy and finite element analysis were used to evaluate the elastic modulus of the overall core/shell nanowires. A core/shell model was applied to deconvolute the elastic modulus of the Al2O3 shell from the core. The results indicate that the elastic modulus of amorphous Al2O3 increases significantly when the thickness of the layer is smaller than 5 nm. This novel nanoscale material can be attributed to the reconstruction of the bonding at the surface of the material, coupled with the increase of the surface-to-volume ratio with nanoscale dimensions. Moreover, the experimental technique and analysis methods presented in this study may be extended to measure the elastic modulus of other materials with dimensions of just several nanometers.

Resolving the morphology of niobium carbonitride nano-precipitates in steel using atom probe tomography.

Atom probe is a powerful technique for studying the composition of nano-precipitates, but their morphology within the reconstructed data is distorted due to the so-called local magnification effect. A new technique has been developed to mitigate this limitation by characterizing the distribution of the surrounding matrix atoms, rather than those contained within the nano-precipitates themselves. A comprehensive chemical analysis enables further information on size and chemistry to be obtained. The method enables new insight into the morphology and chemistry of niobium carbonitride nano-precipitates within ferrite for a series of Nb-microalloyed ultra-thin cast strip steels. The results are supported by complementary high-resolution transmission electron microscopy.