RESUMEN
Actin plays critical roles in various cellular functions, including cell morphogenesis, differentiation, and movement. The assembly of actin monomers into double-helical filaments is regulated in surrounding microenvironments. Graphene is an attractive nanomaterial that has been used in various biomaterial applications, such as drug delivery cargo and scaffold for cells, due to its unique physical and chemical properties. Although several studies have shown the potential effects of graphene on actin at the cellular level, the direct influence of graphene on actin filament dynamics has not been studied. Here, we investigate the effects of graphene on actin assembly kinetics using spectroscopy and total internal reflection fluorescence microscopy. We demonstrate that graphene enhances the rates of actin filament growth in a concentration-dependent manner. Furthermore, cell morphology and spreading are modulated in mouse embryo fibroblast NIH-3T3 cultured on a graphene surface without significantly affecting cell viability. Taken together, these results suggest that graphene may have a direct impact on actin cytoskeleton remodeling.
Asunto(s)
Citoesqueleto de Actina/metabolismo , Fibroblastos/efectos de los fármacos , Grafito/farmacología , Animales , Fibroblastos/metabolismo , Cinética , Ratones , Células 3T3 NIHRESUMEN
Electrochemical capacitors or supercapacitors have achieved great interest in the recent past due to their potential applications ranging from microelectronic devices to hybrid electric vehicles. Supercapacitors can provide high power densities but their inherently low energy density remains a great challenge. The high-performance supercapacitors utilize large electrode surface area for electrochemical double-layer capacitance and/or pseudocapacitance. To enhance the performance of supercapacitors, various strategies have been adopted such as electrode nanostructuring, hybrid electrode designs using nanocomposite electrodes and hybrid supercapacitor (HSC) configurations. Nanoarchitecturing of electrode-active materials is an effective way of enhancing the performance of supercapacitors as it increases the effective electrode surface area for enhanced electrode/electrolyte interaction. In this review, we focus on the recent developments in the novel electrode materials and various hybrid designs used in supercapacitors for obtaining high specific capacitance and energy density. A family of electrode-active materials including carbon nanomaterials, transition metal-oxides, transition metal-nitrides, transition metal-hydroxides, electronically conducting polymers, and their nanocomposites are discussed in detail. The HSC configurations for attaining enhanced supercapacitor performance as well as strategies to integrate with other microelectronic devices/wearable fabrics are also included.
RESUMEN
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS2 or WS2) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary-shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO2), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS2 and 2D MoS2/WS2 vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS2/single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.
RESUMEN
When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a â¼11 times increase in Raman signal and a â¼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.
RESUMEN
Optoelectronic synapses combine the functionalities of a non-volatile memory and photodetection in the same device, paving the path for the realization of artificial retina systems which can capture, pre-process, and identify images on the same platform. Graphene/Ta2O5/graphene phototransistor exhibits synapse characteristics when visible electromagnetic radiation of wavelength 405 nm illuminates the device. The photocurrent is retained after light withdrawal when positive gate voltage is applied to the device. The device exhibits distinct conductance states, modulated by different parameters of incident light, such as pulse width and number of pulses. The conductance state can be retained for 104 s, indicating long term potentiation (LTP), similar to biological synapses. By using optical and electrical pulses, the device shows optical potentiation and electrical LTD repeatably, implying their applicability in neural networks for pattern recognition.
Asunto(s)
Grafito , Potenciación a Largo Plazo , Redes Neurales de la Computación , Óxidos , SinapsisRESUMEN
Congenital tuberculosis (CTB) is the transmission of Mycobacterium tuberculosis infection from mother to infant during the intrauterine period or delivery. An 82-day-old infant presented to Nilratan Sircar Medical College and Hospital, Kolkata, with a history of persistent fever from Day 15 of age. Over the course of more than 2 months, there were pneumonia, hepatosplenomegaly and endophthalmitis which were unresponsive to a range of antibiotics, and there had been several admissions to local hospitals. On this admission, his chest radiograph and contrast-enhanced computed tomography (CECT) of the thorax demonstrated bilateral nodules and enlarged mediastinal lymph nodes. Ultrasound and CECT of the abdomen demonstrated hepatosplenomegaly with multiple hypodense enhancing lesions. GeneXpert of a gastric lavage on Day 2 of this admission detected M. tuberculosis without rifampicin resistance. The infant was diagnosed with tuberculosis (TB) complicated by caseating hepatic granulomas, which fulfilled Cantwell's diagnostic criteria for CTB. Magnetic resonance imaging of the orbit demonstrated focal heterogeneous lesions involving the anterior portion of the left ocular bulb and vitreous, suggesting panophthalmitis, which was unresponsive to intravitreal antibiotics. Following commencement of standard anti-TB therapy from Day 90 of life, there was clinical and radiological recovery of endophthalmitis. The mother had a cachectic appearance owing to weight loss, and she had attended only one antenatal appointment. She had a positive acid-fast bacilli sputum stain but was unwilling to allow a genital tract smear. In the spectrum of CTB, TB panophthalmitis is an extremely rare presentation, and, as far as we are aware, it has not been reported in a child.Abbreviations: AFB: acid-fast bacilli; ATT: anti-tuberculous therapy; CTB: congenital tuberculosis; CECT: contrast-enhanced computed tomography; CSF: cerebrospinal fluid; ESR: erythrocyte sedimentation rate; HIV: human immunodeficiency virus; TB: tuberculosis; MRI: magnetic resonance imaging; USG: ultrasonogram.
RESUMEN
Brain-inspired computing enabled by memristors has gained prominence over the years due to the nanoscale footprint and reduced complexity for implementing synapses and neurons. The demonstration of complex neuromorphic circuits using conventional materials systems has been limited by high cycle-to-cycle and device-to-device variability. Two-dimensional (2D) materials have been used to realize transparent, flexible, ultra-thin memristive synapses for neuromorphic computing, but with limited knowledge on the statistical variation of devices. In this work, we demonstrate ultra-low-variability synapses using chemical vapor deposited 2D MoS2 as the switching medium with Ti/Au electrodes. These devices, fabricated using a transfer-free process, exhibit ultra-low variability in SET voltage, RESET power distribution, and synaptic weight update characteristics. This ultra-low variability is enabled by the interface rendered by a Ti/Au top contact on Si-rich MoS2 layers of mixed orientation, corroborated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS). TEM images further confirm the stability of the device stack even after subjecting the device to 100 SET-RESET cycles. Additionally, we implement logic gates by monolithic integration of MoS2 synapses with MoS2 leaky integrate-and-fire neurons to show the viability of these devices for non-von Neumann computing.
Asunto(s)
Molibdeno , Sinapsis , Encéfalo , Neuronas/fisiología , Sinapsis/fisiologíaRESUMEN
Neuromorphic visual systems emulating biological retina functionalities have enormous potential for in-sensor computing, with prospects of making artificial intelligence ubiquitous. Conventionally, visual information is captured by an image sensor, stored by memory units, and eventually processed by the machine learning algorithm. Here, we present an optoelectronic synapse device with multifunctional integration of all the processes required for real time object identification. Ultraviolet-visible wavelength-sensitive MoS2 FET channel with infrared sensitive PtTe2/Si gate electrode enables the device to sense, store, and process optical data for a wide range of the electromagnetic spectrum, while maintaining a low dark current. The device exhibits optical stimulation-controlled short-term and long-term potentiation, electrically driven long-term depression, synaptic weight update for multiple wavelengths of light ranging from 300 nm in ultraviolet to 2 µm in infrared. An artificial neural network developed using the extracted weight update parameters of the device can be trained to identify both single wavelength and mixed wavelength patterns. This work demonstrates a device that could potentially be used for realizing a multiwavelength neuromorphic visual system for pattern recognition and object identification.
Asunto(s)
Inteligencia Artificial , Sinapsis , Redes Neurales de la Computación , Algoritmos , Plasticidad NeuronalRESUMEN
The valorization of waste frying oil (WFO) to biodiesel has been carried out via solid base catalyzed transesterification reaction. A novel potassium tin oxide (KSO) catalyst was synthesized via polymer precursor auto combustion method. The catalyst showed the best physicochemical properties when it was calcined at 800 °C. Using KSO 800 catalyst, the highest FAME conversion (99.5%) of WFO found at moderated reaction condition within very short time (35 min); moreover, no leaching of K-species was observed in reusability test upto 5th cycle. Kinetics proved that the above catalytic reaction followed pseudo-first-order kinetics and the rate of the reaction was doubled with increasing 10 °C reaction temperature. The reaction activation energy, enthalpy of activation, entropy of activation, and Gibb's free energy of activation of the reaction were found to be 66.52 kJ/mol, 62.95 kJ/mol, -74.07 J/mol/K and 88 kJ/mol respectively. Evaluation of the green parameters revealed that KSO 800 catalyzed transesterification process approached a cleaner route with excellent efficacy in terms of turnover frequency and yield. KSO 800 helped to produce high quality biodiesel from WFO adopting faster and greener reaction pathway. Thus, KSO 800 was considered as a potential and green catalyst for transforming waste oil into biofuel.
Asunto(s)
Biocombustibles , Administración de Residuos , Catálisis , Esterificación , Aceites de Plantas , Potasio , Compuestos de EstañoRESUMEN
In recent years, there has been increasing interest in leveraging two-dimensional (2D) van der Waals (vdW) crystals for infrared (IR) photodetection, exploiting their unusual optoelectrical properties. Some 2D vdW materials with small band gap energies such as graphene and black phosphorus have been explored as stand-alone IR responsive layers in photodetectors. However, the devices incorporating these IR-sensitive 2D layers often exhibited poor performances owing to their preparation issues such as limited scalability and air instability. Herein, we explored wafer-scale 2D platinum ditelluride (PtTe2) layers for near-to-mid IR photodetection by directly growing them onto silicon (Si) wafers. 2D PtTe2/Si heterojunctions exhibited wavelength- and intensity-dependent high photocurrents in a spectral range of â¼1-7 µm, significantly outperforming stand-alone 2D PtTe2 layers. The observed superiority is attributed to their excellent Schottky junction characteristics accompanying suppressed carrier recombination as well as optical absorbance competition between 2D PtTe2 layers and Si. The direct and scalable growth of 2D PtTe2 layers was further extended to demonstrate mechanically flexible IR photodetectors.
RESUMEN
Biodiesel was prepared at laboratory scale via transesterification reaction from waste cooking oil using Sr-Ti mixed metal oxide as a heterogeneous base catalyst. The solid base catalyst was synthesized by polymer precursor method. The most efficient active phase of catalyst was explored by varying the Sr/Ti atomic ratio in mixed metals oxides. The synthesized catalyst underwent for TGA, Powder XRD, SEM, EDX, FT-IR, XPS, and BET surface area analysis to assess its physicochemical characteristics. Additionally, basicity which has been observed as the most process governing factor was also evaluated through Hammett indicator-benzoic acid titration method. The Sr-Ti mixed metals oxide with 4:1 was observed with highest catalytic activity for methanolysis reaction. Its potency was facilitated by fairly acquired BET surface area (43.6 m2/g) and basic strength (2.89 mmol/g). The appreciable values of both the parameters imparted the high catalytic activity in Sr-Ti mixed metals oxide with atomic ratio 4:1. Onward, transesterification reaction was optimized for the maximum FAME conversion through RSM using CCD. The confirmatory tests showed the consistency with the conclusions drawn from RSM study regarding optimized values of concerned process variables. Transesterification reaction turned out 98% FAME conversion exerting catalyst dose (1.0 wt%), methanol to oil molar ratio (11:1), and reaction time (80 min) at reaction temperature (65 °C) and agitation speed (600 rpm) featured by RSM study. The closeness in optimized value of anticipated and confirmatory results perceived the efficiency of CCD and approving its potency as successful tool to estimate the highest FAME conversion. Next, a pseudo-first-order kinetic model of transesterification reaction was established. In addition to this, the thermodynamic functions were also computed through Eyring plot dictating the non-spontaneity and endergonic nature of transesterification reaction. The Environment-factor (E-factor) and Turn Over Frequency (TOF) were enumerated and they approved the prepared Sr-Ti mixed metals oxide as an efficient and sustainable catalyst for biodiesel production through transesterification. Finally, all the important fuel properties of prepared biodiesel from waste cooking oil was discerned within the range laid by ASTM D-6751 standards for biodiesel which coined the compatibility of prepared methyl ester with CI engines as a substitute of diesel fuel.
Asunto(s)
Biocombustibles , Administración de Residuos , Benchmarking , Catálisis , Culinaria , Esterificación , Óxidos , Aceites de Plantas , Espectroscopía Infrarroja por Transformada de FourierRESUMEN
BACKGROUND: There has always been a strong association between mental illness and work-related disability. According to the "World Health Organization," of all disabilities, severe mental illness is associated with the highest rates of unemployment. People with mental illness and problems with substance use have especially low employment rates. AIM: To identify the employability factors among people with mental illness and substance use problems. OBJECTIVES: To assess the barriers and to identify various strategies to overcome barriers to employment for persons with mental illness and substance use problems and to identify instructors' responses about the functionality of the person who works in the vocational training center, to assess the social support experienced by the respondents. MATERIALS AND METHODS: This is a qualitative study used the purposive sampling method to conduct the study on 15 respondents (five people with mental illness, five caregivers, five instructors) from Department of Psychiatric and Neuro Rehabilitation, NIMHANS, Bengaluru. RESULTS: Various themes have identified to assess the barriers, aiding factors, and strategies to employment. Barriers to employment have categorized into individual factors, interpersonal factors, employment factors, and social factors. Health, communication, family support, treatment, and training are strategies to improve employability. Proper treatment and continuous adherence to medication, emotional support by family members and colleagues are the employment aiding factors. CONCLUSION: Identification of barriers and facilitators in the Indian context will help us to address the employability of persons with mental illness and substance use problems.
RESUMEN
Optical data sensing, processing and visual memory are fundamental requirements for artificial intelligence and robotics with autonomous navigation. Traditionally, imaging has been kept separate from the pattern recognition circuitry. Optoelectronic synapses hold the special potential of integrating these two fields into a single layer, where a single device can record optical data, convert it into a conductance state and store it for learning and pattern recognition, similar to the optic nerve in human eye. In this work, the trapping and de-trapping of photogenerated carriers in the MoS2/SiO2 interface of a n-channel MoS2 transistor was employed to emulate the optoelectronic synapse characteristics. The monolayer MoS2 field effect transistor (FET) exhibits photo-induced short-term and long-term potentiation, electrically driven long-term depression, paired pulse facilitation (PPF), spike time dependent plasticity, which are necessary synaptic characteristics. Moreover, the device's ability to retain its conductance state can be modulated by the gate voltage, making the device behave as a photodetector for positive gate voltages and an optoelectronic synapse at negative gate voltages.
RESUMEN
Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many optoelectronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 × 108 AW-1 and specific detectivity of 4.72 × 1015 Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.
RESUMEN
Platinum diselenide (PtSe2) is an emerging class of two-dimensional (2D) transition-metal dichalcogenide (TMD) crystals recently gaining substantial interest, owing to its extraordinary properties absent in conventional 2D TMD layers. Most interestingly, it exhibits a thickness-dependent semiconducting-to-metallic transition, i.e., thick 2D PtSe2 layers, which are intrinsically metallic, become semiconducting with their thickness reduced below a certain point. Realizing both semiconducting and metallic phases within identical 2D PtSe2 layers in a spatially well-controlled manner offers unprecedented opportunities toward atomically thin tailored electronic junctions, unattainable with conventional materials. In this study, beyond this thickness-dependent intrinsic semiconducting-to-metallic transition of 2D PtSe2 layers, we demonstrate that controlled plasma irradiation can "externally" achieve such tunable carrier transports. We grew wafer-scale very thin (a few nm) 2D PtSe2 layers by a chemical vapor deposition (CVD) method and confirmed their intrinsic semiconducting properties. We then irradiated the material with argon (Ar) plasma, which was intended to make it more semiconducting by thickness reduction. Surprisingly, we discovered a reversed transition of semiconducting to metallic, which is opposite to the prediction concerning their intrinsic thickness-dependent carrier transports. Through extensive structural and chemical characterization, we identified that the plasma irradiation introduces a large concentration of near-atomic defects and selenium (Se) vacancies in initially stoichiometric 2D PtSe2 layers. Furthermore, we performed density functional theory (DFT) calculations and clarified that the band-gap energy of such defective 2D PtSe2 layers gradually decreases with increasing defect concentration and dimensions, accompanying a large number of midgap energy states. This corroborative experimental and theoretical study decisively verifies the fundamental mechanism for this externally controlled semiconducting-to-metallic transition in large-area CVD-grown 2D PtSe2 layers, greatly broadening their versatility for futuristic electronics.
RESUMEN
Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.
RESUMEN
2D materials have attracted considerable attention due to their exciting optical and electronic properties, and demonstrate immense potential for next-generation solar cells and other optoelectronic devices. With the scaling trends in photovoltaics moving toward thinner active materials, the atomically thin bodies and high flexibility of 2D materials make them the obvious choice for integration with future-generation photovoltaic technology. Not only can graphene, with its high transparency and conductivity, be used as the electrodes in solar cells, but also its ambipolar electrical transport enables it to serve as both the anode and the cathode. 2D materials beyond graphene, such as transition-metal dichalcogenides, are direct-bandgap semiconductors at the monolayer level, and they can be used as the active layer in ultrathin flexible solar cells. However, since no 2D material has been featured in the roadmap of standard photovoltaic technologies, a proper synergy is still lacking between the recently growing 2D community and the conventional solar community. A comprehensive review on the current state-of-the-art of 2D-materials-based solar photovoltaics is presented here so that the recent advances of 2D materials for solar cells can be employed for formulating the future roadmap of various photovoltaic technologies.
RESUMEN
Two-dimensional (2D) platinum diselenide (PtSe2) layers are a new class of near-atom-thick 2D crystals in a van der Waals-assembled structure similar to previously explored many other 2D transition-metal dichalcogenides (2D TMDs). They exhibit distinct advantages over conventional 2D TMDs for electronics and optoelectronics applications such as metallic-to-semiconducting transition, decently high carrier mobility, and low growth temperature. Despite such superiority, much of their electrical properties have remained mostly unexplored, leaving their full technological potential far from being realized. Herein, we report 2D/three-dimensional Schottky junction devices based on vertically aligned metallic 2D PtSe2 layers integrated on Si wafers. We directly grew 2D PtSe2 layers of controlled orientation and carrier transport characteristics via a low-temperature chemical vapor deposition process and investigated 2D PtSe2/Si Schottky junction properties. We unveiled a comprehensive set of material parameters, which decisively confirm the presence of excellent Schottky junctions, i.e., high-current rectification, small ideality factor, and temperature-dependent variation of Schottky barrier heights. Moreover, we observed strong photovoltaic effects in the 2D PtSe2/Si Schottky junction devices and extended them to realize flexible photovoltaic devices. This study is believed to significantly broaden the versatility of 2D PtSe2 layers in practical and futuristic electronic devices.