Multi-Wavelength-Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System.

Photoelectric memristor has attracted many attentions thanks to their promising potential in optical communication chips and artificial vision systems. However, the implementation of an artificial visual system based on memristive devices remains a considerable challenge because most photoelectric memristors cannot recognize color. Herein, multi-wavelength recognizable memristive devices based on silver(Ag) nanoparticles (NPs) and porous silicon oxide (SiOx ) nanocomposites are presented. Rely on the effects of localized surface plasmon resonance (LSPR) and optical excitation of Ag NPs in SiOx , the set voltage of the device can be gradually reduced. Moreover, the current overshoot problem is alleviated to suppress conducting filament overgrowth after visible light irradiation with different wavelengths, resulting in diverse low resistance states (LRS). Taking advantage of the characteristics of controlled switching voltage and LRS resistance distribution, color image recognition is finally realized in the present work. X-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (C-AFM) show that the light irradiation plays an important role on resistive switching (RS) process: the photo-assisted Ag ionization leads to a significant reduction of set voltage and overshoot current. This work provides an effective method toward the development of multi-wavelength-recognizable memristive devices for future artificial color vision system.

Nanoarchitectonics on Electrosynthesis and Assembly of Conjugated Metallopolymers.

In contrast to edge-on and face-on orientations, end-on uniaxial conjugated polymers have the theoretical possibility of providing a macroscopic crystalline film. However, their fabrication is insurmountable due to sluggishly thermodynamic equilibrium states. Herein, we report the programmatic pathway to fabricate nanoarchitectonics on end-on uniaxial conjugated metallopolymers by surface-initiated simultaneous electrosynthesis and assembly. Self-assembled monolayer (SAM) with bottom-up oriented electroactive molecules as a temple allows orientation, stacking, and reactive addition of monomers triggered by switching alternative redox reactions as well as crystallization of small molecules. Repeating the same reaction can repair the unreactive site on the SAM and dynamically and statistically ensure maximum iterative coverage with ideal linear coefficients between optical or electrical responses and iterative times. The resulting nanoarchitectonics on uniaxially assembled end-on polymers over centimeter-sized areas have a subnanometer-uniform morphology and exhibit ultrahigh modulus as well as an inorganic indium tin oxides and the highest conductance among conjugated molecular monolayers. Their memristive devices provide quantitative electrical and optical responses as a function of molecular length, bias, and iterative junctions. Precise processing of nanoarchitectonics as an electrically assisted assembly or printing technique can present sophisticated optoelectric functions and dimensional batch-to-batch consistency for micro-sized organic materials and electronics.

Adaptive Processing Enabled by Sodium Alginate Based Complementary Memristor for Neuromorphic Sensory System.

Adaptive processing allows sensory systems to autonomically adjust their sensitivity with exposure to a constant sensory stimulus and thus organisms to adapt to environmental variations. Bioinspired electronics with adaptive functions are highly desirable for the development of neuromorphic sensory systems (NSSs). Herein, the functions of desensitization and sensitivity changing with background intensity (i.e., Weber's law), as two fundamental cues of sensory adaptation, are biorealistically demonstrated in an Ag nanowire (NW)-embedded sodium alginate (SA) based complementary memristor. In particular, Weber's law is experimentally emulated in a single complementary memristor. Furthermore, three types of adaptive NSS unit are constructed to realize a multiple perceptual capability that processes the stimuli of illuminance, temperature, and pressure signals. Taking neuromorphic vision as an example, scotopic and photopic adaptation functions are well reproduced for image enhancement against dark and bright backgrounds. Importantly, an NSS system with multisensory integration function is demonstrated by combining light and pressure spikes, where the accuracy of pattern recognition is obviously enhanced relative to that of an individual sense. This work offers a new strategy for developing neuromorphic electronics with adaptive functions and paves the way toward developing a highly efficient NSS.

Doppler Frequency-Shift Information Processing in WOx -Based Memristive Synapse for Auditory Motion Perception.

Auditory motion perception is one crucial capability to decode and discriminate the spatiotemporal information for neuromorphic auditory systems. Doppler frequency-shift feature and interaural time difference (ITD) are two fundamental cues of auditory information processing. In this work, the functions of azimuth detection and velocity detection, as the typical auditory motion perception, are demonstrated in a WOx -based memristive synapse. The WOx memristor presents both the volatile mode (M1) and semi-nonvolatile mode (M2), which are capable of implementing the high-pass filtering and processing the spike trains with a relative timing and frequency shift. In particular, the Doppler frequency-shift information processing for velocity detection is emulated in the WOx memristor based auditory system for the first time, which relies on a scheme of triplet spike-timing-dependent-plasticity in the memristor. These results provide new opportunities for the mimicry of auditory motion perception and enable the auditory sensory system to be applied in future neuromorphic sensing.

Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision.

Exploration of optoelectronic memristors with the capability to combine sensing and processing functions is required to promote development of efficient neuromorphic vision. In this work, the authors develop a plasmonic optoelectronic memristor that relies on the effects of localized surface plasmon resonance (LSPR) and optical excitation in an Ag-TiO2 nanocomposite film. Fully light-induced synaptic plasticity (e.g., potentiation and depression) under visible and ultraviolet light stimulations is demonstrated, which enables the functional combination of visual sensing and low-level image pre-processing (including contrast enhancement and noise reduction) in a single device. Furthermore, the light-gated and electrically-driven synaptic plasticity can be performed in the same device, in which the spike-timing-dependent plasticity (STDP) learning functions can be reversibly modulated by visible and ultraviolet light illuminations. Thereby, the high-level image processing function, i.e., image recognition, can also be performed in this memristor, whose recognition rate and accuracy are obviously enhanced as a result of image pre-processing and light-gated STDP enhancement. Experimental analysis shows that the memristive switching mechanism under optical stimulation can be attributed to the oxidation/reduction of Ag nanoparticles due to the effects of LSPR and optical excitation. The authors' work proposes a new type of plasmonic optoelectronic memristor with fully light-modulated capability that may promote the future development of efficient neuromorphic vision.

Humidity Effect on Resistive Switching Characteristics of the CH3NH3PbI3 Memristor.

Organic-inorganic hybrid halide perovskites (OIHPs) with inherent mixed ionic-electronic conduction ability have been proposed as promising candidates for memristors with unique optoelectronic characteristics. Despite the great achievements toward understanding the working mechanism and exploring their functionality as water-sensitive materials, the humidity effect on the resistive switching (RS) characteristics still remains to be studied. This study investigates the humidity effect on the RS characteristics of Au/CH3NH3PbI3/FTO memristor. The memristor works well at moderate relative humidity (RH, <75%) and degrades rapidly at higher RH of 90%. An obvious decrease in low resistance states on increasing the RH level is observed, which could be attributed to water-induced reduction of the iodide migration barrier. Raman and X-ray diffraction analyses indicate that the migration barrier reduction possibly originated from the weakening of the Pb-I bond caused by the intercalation of water molecules into the crystal lattice. The humidity-sensitive RS characteristics of the memristor could extend the scope of OIHP application for sensing and security applications and also prompt researchers to pay attention to the humidity effect on memristor devices with OIHPs.