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3.
Phys Rev Lett ; 67(16): 2231-2234, 1991 Oct 14.
Artículo en Inglés | MEDLINE | ID: mdl-10044372
7.
Phys Rev B Condens Matter ; 36(15): 8165-8168, 1987 Nov 15.
Artículo en Inglés | MEDLINE | ID: mdl-9942622
11.
Science ; 276(5313): 773-6, 1997 May 02.
Artículo en Inglés | MEDLINE | ID: mdl-9115197

RESUMEN

A quantum-cascade long-wavelength infrared laser based on superlattice active regions has been demonstrated. In this source, electrons injected by tunneling emit photons corresponding to the energy gap (minigap) between two superlattice conduction bands (minibands). A distinctive design feature is the high oscillator strength of the optical transition. Pulsed operation at a wavelength of about 8 micrometers with peak powers ranging from approximately 0.80 watt at 80 kelvin to 0.2 watt at 200 kelvin has been demonstrated in a superlattice with 1-nanometer-thick AlInAs barriers and 4.3-nanometer-thick GaInAs quantum wells grown by molecular beam epitaxy. These results demonstrate the potential of strongly coupled superlattices as infrared laser materials for high-power sources in which the wavelength can be tailored by design.

12.
Science ; 286(5440): 749-752, 1999 Oct 22.
Artículo en Inglés | MEDLINE | ID: mdl-10531055

RESUMEN

A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers) in the midinfrared region of the spectrum from a single quantum cascade laser structure. The two wavelengths are excited independently of each other and separated in time. This may have considerable impact on various semiconductor laser applications including trace gas analysis in remote sensing applications with differential absorption spectroscopy.

13.
Science ; 280(5369): 1556-64, 1998 Jun 05.
Artículo en Inglés | MEDLINE | ID: mdl-9616111

RESUMEN

High-power and highly directional semiconductor microcylinder lasers based on an optical resonator with deformed cross section are reported. In the favorable directions of the far-field, a power increase of up to three orders of magnitude over the conventional circularly symmetric lasers was obtained. A "bow-tie"-shaped resonance is responsible for the improved performance of the lasers in the higher range of deformations, in contrast to "whispering-gallery"-type modes of circular and weakly deformed lasers. This resonator design, although demonstrated here in midinfrared quantum-cascade lasers, should be applicable to any laser based on semiconductors or other high-refractive index materials.

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