Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar-Blind Photodetecting Paper.

Solar-blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h-BN heterostructure, which enables the ultrahigh responsivity of a solar-blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline copper paper induced by h-BN 2D interlayer is obtained. Meanwhile, strong photon trapping takes place within the ZnO nanoarray forest through the cyclic state transition of surface oxygen ions, resulting in an extremely high absorption efficiency (> 99.5%). A flexible photodetecting paper is fabricated for switchable detections between near UV and deep UV signals by critical external bias. The device shows robust reliability, ultrahigh responsivity up to 700 A W-1 @ 265-276 nm, and high photoconductive gain of ≈2 × 103 . A negative differential resistance effect is revealed for driving the rapid transfer of up-converted electrons between adjacent energy valleys (Γ to A) above the critical bias (3.9 V). The discovered rationale and device structure are expected to bring high-efficiency deep UV detecting and future wearable applications.

Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor.

The copper nanowire (Cu NW) network is considered a promising alternative to indium tin oxide as transparent conductors for advanced optoelectronic devices. However, the fast degradation of copper in ambient conditions largely overshadows its practical applications. Here we demonstrate a facile method for epitaxial growth of hexagonal boron nitride (h-BN) of a few atomic layers on interlaced Cu NWs by low-pressure chemical vapor deposition, which exhibit excellent thermal and chemical stability under high temperature (900 °C in vacuum), high humidity (95% RH), and strong base/oxidizer solution (NaOH/H2O2). Meanwhile, their optical and electrical performances remain similar to those of the original Cu NWs (e.g., high optical transmittance (∼93%) and high conductivity (60.9 Ω/□)). A smart privacy glass is successfully fabricated based on a Cu@h-BN NW network and liquid crytal, which could rapidly control the visibility from transparent to opaque (0.26 s) and, at the same time, strongly block the mid-infrared light for energy saving by screening radiative heat. This precise engineering of epitaxial Cu@h-BN core-shell nanostructure offers broad applications in high-performance electronic and optoelectronic devices.

Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer.

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2" tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2" GaN or 4" Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 µm has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate.

One-Pot Synthesis of Superfine Core-Shell Cu@metal Nanowires for Highly Tenacious Transparent LED Dimmer.

We demonstrate a one-pot, low-cost, and scalable method for fast synthesis of superfine and uniform core-shell Cu nanowires (NWs) coated with optional metals and/or alloy. Cu NWs in high aspect ratio (>3000) were synthesized through an oleylamine-mediated solution method, and tunable shell coating was performed by injecting metal-organic precursors at the last stage of reaction. Superfine Cu@metal NWs (Ti, Zn, V, Ni, Ag, NiZn, etc) were achieved in diameter of ∼30 nm and length of ∼50 µm. Transparent conductive films were obtained by imprinting method, showing high optoelectronic performance (51 Ω/sq at 93% transmittance), high mechanical tenacity over bending, twisting, stretching, and compressing, and robust antioxidant ability (high temperature and high humidity). A transparent film dimmer for light-emitting diode (LED) lighting was fabricated with the stretchable Cu@Ti NWs network. The LED luminance could be accurately tuned by the deformation strain of Cu@Ti NWs film.

Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode.

Transparent conducting film occupies an important position in various optoelectronic devices. To replace the costly tin-doped indium oxide (ITO), promising materials, such as metal nanowires and graphene, have been widely studied. Moreover, a long-pursued goal is to consolidate these two materials together and express their outstanding properties simultaneously. We successfully achieved a direct 3D coating of a graphene layer on an interlacing Cu nanosilks network by the low pressure chemical vapor deposition method. High aspect ratio Cu nanosilks (13 nm diameter with 40 µm length) were synthesized through the nickel ion catalytic process. Large-size, transparent conducting film was successfully fabricated with Cu nanosilks ink by the imprint method. A magnetic manipulator equipped with a copper capsule was used to produce high Cu vapor pressure on Cu nanosilks and realize the graphene 3D-coating. The coated Cu@graphene nanosilks network achieved high transparency, low sheet resistance (41 Ohm sq(-1) at 95% transmittance) and robust antioxidant ability. With this technique, the transfer process of graphene is no longer needed, and a flexible, uniform and high-performance transparent conducting film could be fabricated in unlimited size.