RESUMEN
Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well (QW) structure is commonly adopted as one of the core elements in modern electric and optoelectronic devices. Here, the time dependent photoconductivity spectra along the active InGaAs QW channel in a dual and symmetric Si δ-doped AlGaAs/InGaAs/AlGaAs QW structure are systematically studied under various temperatures (T = 80-300 K) and various incident photon energies (E in = 1.10-1.88 eV) and intensities. In addition to positive photoconductivity, negative photoconductivity (NPC) was observed and attributed to two origins. For T = 180-240 K with E in = 1.51-1.61 eV, the trapping of the photo-excited electrons by the interface states located inside the conduction band of InGaAs QW layer is one of the origins for NPC curves. For T = 80-120 K with E in = 1.10-1.63 eV, the photoexcitation of the excess 'supersaturated' electrons within the active InGaAs QW caused by the short cooling process is another origin.
RESUMEN
The pristine and diethylenetriamine (DETA)-doped tungsten disulfide quantum dots (WS2 QDs) with an average lateral size of about 5 nm have been synthesized using pulsed laser ablation (PLA). Introduction of the synthesized WS2 QDs on the InGaAs/AlGaAs quantum wells (QWs) can improve the photoluminescence (PL) of the InGaAs/AlGaAs QW as high as 6 fold. On the basis of the time-resolved PL and Kelvin probe measurements, the PL enhancement is attributed to the carrier transfer from the pristine or DETA-doped WS2 QDs to the InGaAs/AlGaAs QW. A heterostructure band diagram is proposed for explaining the carrier transfer, which increases the hole densities in the QW and enhances its PL intensity. This study is expected to be beneficial for the development of the InGaAs-based optoelectronic devices.
RESUMEN
Temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (tS = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n2D(T)] was observed for tS = 10 and 15 nm but not for tS = 5 nm. A model involving two different activation barriers encountered respectively by electrons in the active QW and by electrons in the δ-doped layers is proposed to account for the hysteresis behavior. However, for small enough tS (= 5 nm ≤ 2.5 s, where s = 2.0 nm is the standard deviation of the Gaussian fit to the Si-δ-doped profile), the distribution of Si dopants near active QW acted as a specific form of "modulation doping" and can not be regarded as an ideal δ-doping. These Si dopants nearby the active QW effectively increase the magnitude of n2D, and hence no hysteresis curve was observed. Finally, effects from tS on the T-dependence of electron mobility in active QW channel are also discussed.