Evolution of nanostructured single-phase CoSb3 thin films by low-energy ion beam induced mixing and their thermoelectric performance.

Skutterudites are emerging as potential candidates that show high efficiency and thus provide an ideal platform for research. The properties of nanostructured films of skutterudites are different from those of the corresponding bulk. The present study reports the evolution of nanostructured single-phase CoSb3 fabricated by using low-energy ion irradiation of Co/Sb bilayer films and subsequent annealing at an optimized temperature and their Seebeck coefficients (S). The effects of ion beam parameters with annealing on the phase evolution and nanostructure modifications were studied. An increase in Xe+ ion fluence resulted in complete mixing of Co/Sb on postannealing forming flower-like nanostructures of single phase CoSb3. The temperature-dependent electrical resistivity (ρ) increases with the ion fluence because of defect creation which further increases on postannealing due to surface nanostructuring. The S of these films of CoSb3 is found to be higher and this is attributed to the formation of a uniform layer of nanostructured CoSb3 alloy thin film. The S and Hall coefficients of all these films are negative implying that they are n-type semiconductors.

Phase evolution and electrical properties of Co-Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing.

An investigation was carried out to understand the phase evolution and study the structural, morphological, optical and electrical properties of Co-Sb alloys fabricated by two different approaches: (a) thermal annealing and (b) ion-beam mixing followed by post annealing. The as-deposited and 100 MeV Ag ion beam irradiated Co/Sb bilayer thin films were subjected to thermal annealing from 200 to 400 °C for 1 hour. The Rutherford backscattering spectrometry (RBS) results showed partial mixing for the thermally annealed films and complete mixing for the irradiated and post annealed films at 400 °C. The XRD and RAMAN measurements indicated the formation of Co-Sb alloy, with ∼70% concentration of CoSb3 phase in the irradiated post annealed sample at 400 °C. The band gaps of the annealed and post irradiated annealed Co-Sb alloys were determined using UV-visible spectroscopy. Electrical and thermoelectric power measurements were performed in the temperature range of 300-420 K. It was observed that the alloys formed by ion-beam induced mixing exhibited higher electrical conductivity and thermoelectric power than the as-deposited and thermally annealed Co/Sb bilayer thin films.