RESUMEN
Magnesium tetraborate (MgB4O7) is an example of a material that has attracted the attention of researchers in the field of ionising radiation dosimetry. Several challenges are present in order to achieve considerable advances in luminescence dosimetry. The incorporation of efficient dopants in the host matrix has been an experimentally useful but limited strategy. The lack of specific information about the introduced defects as well as their connection with the trapping and recombination processes associated with light emission may be quoted as challenging examples. Here, we demonstrate the influence of lithium incorporation on Optically Stimulated Luminescence (OSL)/Thermoluminescence (TL) signal modification/suppression of MgB4O7 by combining experimental and computational procedures. Li substitution into the Mg site leads to a signal suppression due to the probable quenching of the Fs and Fs+ centres in MgO and the formation of O''i, drastically reducing the possibility of MgO anti-Schottky defect formation in MgB4O7. When using Li-co-doped MgB4O7:Ce3+, the Li ions act as a charge balancer, facilitating the entry of Ce ions into the interstitial pores and making possible a positive synergistic effect on the luminescence and dosimetric properties. These findings provide new insights into designing more efficient dosimeters by tuning dopants.
RESUMEN
Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology.