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Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.
RESUMEN
This corrects the article DOI: 10.1103/PhysRevLett.109.170402.
RESUMEN
In terms of the exact quantum master equation solution for open electronic systems, the coherent dynamics of two charge states described by two parallel quantum dots with one fully polarized electron on either dot is investigated in the presence of spin-orbit interaction. We demonstrate that the double dot system can stay in a dynamically decoherence free space. The coherence between two double dot charge states can be precisely manipulated through a spin-orbit coupling. The effects of the temperature, the finite bandwidth of lead, and the energy deviations during the coherence manipulation are also explored.
RESUMEN
We present a general theory of non-Markovian dynamics for open systems of noninteracting fermions (bosons) linearly coupled to thermal environments of noninteracting fermions (bosons). We explore the non-Markovian dynamics by connecting the exact master equations with the nonequilibirum Green's functions. Environmental backactions are fully taken into account. The non-Markovian dynamics consists of nonexponential decays and dissipationless oscillations. Nonexponential decays are induced by the discontinuity in the imaginary part of the self-energy corrections. Dissipationless oscillations arise from band gaps or the finite band structure of spectral densities. The exact analytic solutions for various non-Markovian thermal environments show that non-Markovian dynamics can be largely understood from the environmental-modified spectra of open systems.
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The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics. Here, we report spin photovoltaic effects in vdW heterostructures of 2D magnet chromium triiodide (CrI3) sandwiched by graphene contacts. The photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarizationresolved absorption measurements reveal that these observations originate from magnetic ordercoupled and, thus, helicity-dependent charge-transfer excitons. The photocurrent displays multiple plateaus as the magnetic field is swept, associated with different CrI3 spin configurations. Giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photospintronics by engineering magnetic vdW heterostructures.
RESUMEN
Van der Waals heterostructures of two-dimensional (2D) materials provide a powerful approach toward engineering various quantum phases of matter. Examples include topological matter such as quantum spin Hall (QSH) insulator and correlated matter such as exciton superfluid. It can be of great interest to realize these vastly different quantum phases matter on a common platform; however, their distinct origins tend to restrict them to material systems of incompatible characters. Here, we show that heterobilayers of 2D valley semiconductors can be tuned through interlayer bias between an exciton superfluid, a quantum anomalous Hall insulator, and a QSH insulator. The tunability between these distinct phases results from the competition of Coulomb interaction with the interlayer quantum tunneling that has a chiral form in valley semiconductors. Our findings point to exciting opportunities for harnessing both protected topological edge channels and bulk superfluidity in an electrically configurable platform.
RESUMEN
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3 Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.