Closed-Form Weak Localization Magnetoconductivity in Quantum Wells with Arbitrary Rashba and Dresselhaus Spin-Orbit Interactions.

We derive a closed-form expression for the weak localization (WL) corrections to the magnetoconductivity of a 2D electron system with arbitrary Rashba α and Dresselhaus ß (linear) and ß_{3} (cubic) spin-orbit interaction couplings, in a perpendicular magnetic field geometry. In a system of reference with an in-plane z[over ^] axis chosen as the high spin-symmetry direction at α=ß, we formulate a new algorithm to calculate the three independent contributions that lead to WL. The antilocalization is counterbalanced by the term associated with the spin relaxation along z[over ^], dependent only on α-ß. The other term is generated by two identical scattering modes characterized by spin-relaxation rates which are explicit functions of the orientation of the scattered momentum. Excellent agreement is found with data from GaAs quantum wells, where, in particular, our theory correctly captures the shift of the minima of the WL curves as a function of α/ß. This suggests that the anisotropy of the effective spin-relaxation rates is fundamental to understanding the effect of the spin-orbit coupling in transport.

Template-Assisted Scalable Nanowire Networks.

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.