III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition.

A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m-plane GaN substrates. The internal loss was determined using the variable stripe length method, where the laser structure with ALD sidewall passivation showed lower internal loss compared to the conventional shallow-ridge laser design. ALD sidewall passivation plays a critical role in device improvements; compared to the lasers without ALD sidewall passivation, the lasers with ALD sidewall passivation yield improved optoelectrical performance and longer lifetime under continuous-wave operation at high current density. This work demonstrates the importance of ALD sidewall passivation to laser performance, which enables high energy efficiency.

Metasurface Light-Emitting Diodes with Directional and Focused Emission.

Phased-array metasurfaces enable the imprinting of complex beam structures onto coherent incident light. Recent demonstrations of photoluminescent phased-array metasurfaces highlight possibilities for achieving similar control in electroluminescent light-emitting diodes (LEDs). However, phased-array metasurface LEDs have not yet been demonstrated owing to the complexities of integrating device stacks and electrodes within nanopatterned metasurfaces. Here, we demonstrate metasurface LEDs that emit directional or focused light. We first design nanoribbon elements that achieve the requisite phase control within typical LED device constraints. Subsequently, we demonstrate unidirectional emission that can be engineered at will via phased-array concepts. This control is further exhibited in metasurface LEDs that directly emit focused beams. Finally, we show that these metasurface LEDs exhibit external quantum efficiencies (EQEs) superior to those of unpatterned LEDs. These results demonstrate metasurface designs that are compatible with high-EQE metal-free LED devices and portend opportunities for new classes of metasurface LEDs that directly produce complex beam structures.

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600†nm on patterned sapphire substrates.

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm2. LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200†nm ultra-short cavity length.

Violet semipolar (20-2-1) InGaN microcavity light-emitting diodes (MC-LED) with a 200 nm ultra-short cavity length were demonstrated. The emission wavelength was 419 nm with a spectrum width of 20 nm. The external quantum efficiency (EQE) of MC-LED was constant at 0.8% for a forward current from 0.5 to 2 mA with the emitting area of 30×30 µm2. With increasing forward current, the peak wavelength and spectrum width of the emission showed almost no changes. For epitaxial growth, metal-organic chemical vapor deposition (MOCVD) was used. Substrate removal and tunnel-junction with an Ag-based electrode made possible the fabrication of the ultra-short 200 nm thick cavity MC-LED. This is more than a factor of 2 improvement compared to previous MC-LEDs of 450 nm cavity thickness sustaining 5 modes.

Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors.

We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was achieved with a reverse bias of -6 V. Carrier escape lifetimes due to carrier trapping in the quantum wells (QWs) were obtained from both simulation and experimental fitting, identifying carrier trapping as the major speed limiting factor in the InGaN/GaN MQW PDs.

Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments.

The electrical and optical improvements of AlGaInP micro-light-emitting diodes (µLEDs) using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the high surface recombination velocity and minority carrier diffusion length of the AlGaInP material system, devices without sidewall passivation suffered from high leakage and severe drop in external quantum efficiency (EQE). By employing ALD sidewall treatments, the 20×20 µm2 µLEDs resulted in greater light output power, size-independent leakage current density, and lower ideality factor. The forward current-voltage characteristic was enhanced by using surface pretreatment. Furthermore, ALD sidewall treatments recovered the EQE of the 20×20 µm2 devices more than 150%. This indicated that AlGaInP µLEDs with ALD sidewall treatments can be used as the red emitter for full-color µLED display applications.

Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition.

High performance InGaN micro-size light-emitting diodes (µLEDs) with epitaxial tunnel junctions (TJs) were successfully demonstrated using selective area growth (SAG) by metalorganic chemical vapor deposition (MOCVD). Patterned n + GaN/n-GaN layers with small holes were grown on top of standard InGaN blue LEDs to form TJs using SAG. TJ µLEDs with squared mesa ranging from 10×10 to 100×100 µm2 were fabricated. The forward voltage (Vf) in the reference TJ µLEDs without SAG is very high and decreases linearly from 4.6 to 3.7 V at 20 A/cm2 with reduction in area from 10000 to 100 µm2, which is caused by the lateral out diffusion of hydrogen through sidewall. By contrast, the Vf at 20 A/cm2 in the TJ µLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the Vf in the SAG TJ µLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG. The output power of SAG TJ µLEDs is ∼10% higher than the common µLEDs with indium tin oxide (ITO) contact.

560†nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates.

We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observations, we discuss how the management of misfit dislocations and their confinement in areas away from the active light-emitting region is necessary for improving device performance. We also discuss how the patterning of semipolar GaN on sapphire influences material properties in terms of surface roughness and undesired faceting in addition to indium segregation at the proximity of defected areas.

Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate.

We demonstrate a simple method to fabricate efficient, electrically driven, polarized, and phosphor-free white semipolar (20-21) InGaN light-emitting diodes (LEDs) by adopting a top blue quantum well (QW) and a bottom yellow QW directly grown on (20-21) semipolar bulk GaN substrate. At an injection current of 20 mA, the fabricated 0.1 mm2 size regular LEDs show an output power of 0.9 mW tested on wafer without any backside roughing, a forward voltage of 3.1 V and two emission peaks located at 427 and 560 nm. A high polarization ratio of 0.40 was measured in the semipolar monolithic white LEDs, making them promising candidates for backlighting sources in liquid crystal displays (LCDs). Furthermore, a 3dB modulation bandwidth of 410 MHz in visible light communication (VLC) was obtained in the micro-size LEDs (µLEDs) with a size of 20×20 µm2 and 40×40 µm2, which could overcome the limitation of slow frequency response of yellow phosphor in commercial white LEDs combing blue LEDs and yellow phosphor.

High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating.

Single-frequency blue laser sources are of interest for an increasing number of emerging applications but are still difficult to implement and expensive to fabricate and suffer from poor robustness. Here a novel and universal grating design to realize distributed optical feedback in visible semiconductor laser diodes (LDs) was demonstrated on a semipolar InGaN LD, and its unique effect on the laser performance was investigated. For the first time, to the best of our knowledge, a low threshold voltage, record-high power output, and ultra-narrow single-mode lasing were simultaneously obtained on the new laser structure with a thinner p-GaN layer and a third-order phase-shifted embedded dielectric grating. Under continuous-wave operation, such 450 nm lasers achieved 35 dB side-mode suppression ratio, less than 2 pm FWHM, and near 400 mW total output power at room temperature.

Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template.

We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm2 to 100 × 100 µm2, grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium composition and indicated that no indium clusters were observed in the QWs. The µLEDs showed a small wavelength blueshift of 5 nm, as the current density increased from 5 to 90 A/cm2 and exhibited a size-independent EQE of 2% by sidewall passivation using atomic-layer deposition, followed by an extremely low leakage current of ~0.1 nA at -5 V. Moreover, optical polarization behavior with a polarization ratio of 40% was observed. This work demonstrated long-wavelength µLEDs fabricated on semipolar GaN grown on foreign substrate, which are applicable for a variety of display applications at a low cost.

Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating.

A novel approach to realize DFB gratings on GaN based laser diodes is presented and continuous-wave single longitudinal mode operation is achieved. The first order gratings were fabricated on the surface of indium tin oxide (ITO) on top of the laser ridge, which combines the benefits of simplified fabrication, easy scalability to wider ridges, and no regrowth or overgrowth. Under continuous-wave operation, the laser emits with a full FWHM of 5 pm, a SMSR of 29 dB and output power from a single facet as high as 80 mW. To the best of authors' knowledge, this is also the first demonstration of a DFB-LD on semipolar InGaN/GaN system.

High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition.

Optoelectronic effects of sidewall passivation on micro-sized light-emitting diodes (µLEDs) using atomic-layer deposition (ALD) were investigated. Moreover, significant enhancements of the optical and electrical effects by using ALD were compared with conventional sidewall passivation method, namely plasma-enhanced chemical vapor deposition (PECVD). ALD yielded uniform light emission and the lowest amount of leakage current for all µLED sizes. The importance of sidewall passivation was also demonstrated by comparing leakage current and external quantum efficiency (EQE). The peak EQEs of 20 × 20 µm2 µLEDs with ALD sidewall passivation and without sidewall passivation were 33% and 24%, respectively. The results from ALD sidewall passivation revealed that the size-dependent influences on peak EQE can be minimized by proper sidewall treatment.

Microaerobic conversion of glycerol to ethanol in Escherichia coli.

Glycerol has become a desirable feedstock for the production of fuels and chemicals due to its availability and low price, but many barriers to commercialization remain. Previous investigators have made significant improvements in the yield of ethanol from glycerol. We have developed a fermentation process for the efficient microaerobic conversion of glycerol to ethanol by Escherichia coli that presents solutions to several other barriers to commercialization: rate, titer, specific productivity, use of inducers, use of antibiotics, and safety. To increase the rate, titer, and specific productivity to commercially relevant levels, we constructed a plasmid that overexpressed glycerol uptake genes dhaKLM, gldA, and glpK, as well as the ethanol pathway gene adhE. To eliminate the cost of inducers and antibiotics from the fermentation, we used the adhE and icd promoters from E. coli in our plasmid, and we implemented glycerol addiction to retain the plasmid. To address the safety issue of off-gas flammability, we optimized the fermentation process with reduced-oxygen sparge gas to ensure that the off-gas remained nonflammable. These advances represent significant progress toward the commercialization of an E. coli-based glycerol-to-ethanol process.

Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission.

Phased-array metasurfaces have been extensively used for wavefront shaping of coherent incident light. Due to the incoherent nature of spontaneous emission, the ability to similarly tailor photoluminescence remains largely unexplored. Recently, unidirectional photoluminescence from InGaN/GaN quantum-well metasurfaces incorporating one-dimensional phase profiles has been shown. However, the possibility of generating arbitrary two-dimensional waveforms-such as focused beams-is not yet realized. Here, we demonstrate two-dimensional metasurface axicons and lenses that emit collimated and focused beams, respectively. First, we develop off-axis meta-axicon/metalens equations designed to redirect surface-guided waves that dominate the natural emission pattern of quantum wells. Next, we show that photoluminescence properties are well predicted by passive transmission results using suitably engineered incident light sources. Finally, we compare collimating and focusing performances across a variety of different light-emitting metasurface axicons and lenses. These generated two-dimensional phased-array photoluminescence waveforms facilitate future development of light sources with arbitrary functionalities.

Visualization of Charge Transfer from Bacteria to a Self-Doped Conjugated Polymer Electrode Surface Using Conductive Atomic Force Microscopy.

In this work, we aim to provide a better understanding of the reasons behind electron transfer inefficiencies between electrogenic bacteria and the electrode in microbial fuel cells. We do so using a self-doped conjugated polyelectrolyte (CPE) as the electrode surface, onto which Geobacter sulfurreducens is placed, then using conductive atomic force microscopy (C-AFM) to directly visualize and quantify the electrons that are transferring from each bacterium to the electrode, thereby helping us gain a better understanding for the overpotential losses in MFCs. In doing so, we obtain images that show G. sulfurreducens can directly transfer electrons to an electrode surface without the use of pili, and that overpotential losses are likely due to cell death and poor distribution or performance of individual bacterium's OmcB cytochromes. This unique combination of CPEs with C-AFM can also be used for other studies where electron transfer loss mechanisms need to be understood on the nanoscale, allowing for direct visualization of potential issues in these systems.

Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates.

The last two decades have shown an increasing need for GaN-based laser diodes (LDs), which are currently only grown on bulk GaN substrates, which remain to date very expensive and/or only available in small sizes. The ever growing laser market will expand in the coming years, thanks to the development of automotive laser lighting, high-speed Li-Fi optical data transmission, LiDAR sensing for autonomous vehicles and smart cities, head-up displays, and AR/VR systems, in addition to biomedical and further industrial applications. These emerging technologies demand for mass-production of GaN-based lasers to be produced on large-size, low-cost, and industrially compatible substrates. To address this issue, we demonstrate the first electrically injected semipolar 440 nm LD on high-quality and low-defect-density (11-22) GaN templates grown on scalable and low-cost sapphire substrates. The LDs exhibit a threshold current density of 17 kA/cm2, a single facet output power of more than 200 mW at 2 A with a slope efficiency of 0.85 W/A, and a TE polarization having a ratio of 97.6%. These results enable the advancement of ultra-low-cost LDs while benefiting from the inherent advantages of semipolar GaN properties.

Reduction of acetate accumulation in Escherichia coli cultures for increased recombinant protein production.

The culture of Escherichia coli for the commercial production of recombinant proteins has increased significantly in recent years. The production of acetate as a byproduct retards cell growth, inhibits protein formation, and diverts carbon from biomass to protein product. Our approach to reducing acetate accumulation was to disable the phosphoenolpyruvate:sugar phosphotransferase system (PEP-PTS) by deleting the ptsHI operon in the wild-type E. coli strain GJT001. The mutation caused a severe reduction in growth rate and glucose uptake rate in glucose-supplemented M9 minimal medium, which confirmed the mutation, and eliminated acetate accumulation. The mutant strain (TC110) apparently metabolized glucose by a non-PTS mechanism that we are currently investigating, followed by phosphorylation by glucokinase. In complex medium such as 2xLB broth with 2% glucose, TC110 was able to grow quickly and still retained the phenotype of significantly reduced acetate accumulation (9.1+/-6.6 vs. 90.4+/-1.6mM in GJT001, P<0.05). The reduced acetate accumulation resulted in a significant improvement in final OD (23.5+/-0.7 in TC110 vs. 8.0+/-0.1 in GJT001, P<0.05). We tested the strains for the production of model recombinant proteins such as green fluorescent protein (GFP) and beta-galactosidase. TC110 had a 385-fold improvement in final volumetric productivity of GFP over GJT001 in shake flasks with 2xLB broth with 2% glucose. The distribution of GFP fluorescence in the cell population, as determined by flow cytometry, was much broader in GJT001 (coefficient of variation=466+/-35%) than in TC110 (coefficient of variation=55+/-1%). In corn steep liquor medium with 2% glucose, we observed a 28.5-fold improvement in final volumetric production of GFP in TC110 over GJT001. TC110 had a 7.5-fold improvement in final volumetric productivity of beta-galactosidase over GJT001 in 2xLB broth with 2% glucose medium. When tested in a batch bioreactor cultures with 2xLB broth with 2% glucose medium, the volumetric production of GFP by TC110 was 25-fold higher than that of GJT001. In summary, the ptsHI mutant of GJT001 resulted in reduced acetate accumulation, which led to significant improvements in recombinant protein production in batch bioreactors.

Engineering poly(3-hydroxybutyrate-co-3-hydroxyvalerate) copolymer composition in E. coli.

A strain of Escherichia coli was metabolically engineered to produce poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV) of specified composition between 5% and 18% HV. A gene encoding propionyl-CoA synthetase (prpE from S. enterica) was placed under the control of the IPTG-inducible tac promoter (P(taclacUV5)) while the polyhydroxyalkanoate synthesis operon (phaBCA) from R. eutropha was expressed constitutively. A strain of E. coli harboring both plasmids was grown in defined medium and PHBV was produced with specified hydroxyvalerate (HV) molar content between 5% and 18%. The molecular weight of the copolymer was approximately 700,000 across various HV contents, and average polydispersity was approximately 1.3. The majority of the PHBV production occurred during the late exponential/stationary phase. The HV content of the copolymer generally peaked early in the incubation before falling to its final value. We found that the time profiles of PrpE activity, propionyl-CoA, and acetyl-CoA were well correlated to the HV content time profile. Despite an abundance of propionyl-CoA, incorporation of HV into the copolymer was inefficient. Therefore, both the PHA operon and conditions affecting the availability of propionyl-CoA must be chosen carefully to achieve the desired HV content. The ability to engineer copolymer composition control into an E. coli strain would be useful in cases where the feedstock composition is not adjustable.

Conjugated Polyelectrolytes as Efficient Hole Transport Layers in Perovskite Light-Emitting Diodes.

Perovskite-based optoelectronic devices have been rapidly developing in the past 5 years. Since the first report, the external quantum efficiency (EQE) of perovskite light-emitting diodes (PeLEDs) has increased rapidly through the control of morphology and structure from 0.1% to more than 11%. Here, we report the use of various conjugated polyelectrolytes (CPEs) as the hole injection layer in PeLEDs. In particular, we find that poly[2,6-(4,4-bis-potassium butanylsulfonate)-4 H-cyclopenta-[2,1- b;3,4- b']-dithiophene)] (PCPDT-K) transfers holes effectively, blocks electron transport from the perovskite to the underlying ITO layer, and reduces luminescence quenching at the perovskite/PCPDT-K interface. Our optimized PeLEDs with PCPDT-K show enhanced EQE by a factor of approximately 4 compared to control PeLEDs with PEDOT:PSS, reaching EQE values of 5.66%, and exhibit improved device stability.