From single atoms to self-assembled quantum single-atomic nanowires: noble metal atoms on black phosphorene monolayers.

Transition metal (TM) nanostructures, such as one dimensional (1D) nanowires with/without substrates, usually possess drastically different properties from their bulk counterparts, due to their distinct stacking and electronic confinement. Correspondingly, it is of great importance to establish the dominant driving force in forming 1D single-metal-atom-wires (SMAWs). Here, with first-principles calculations, taking the black phosphorene (BP) monolayer as a prototype 2D substrate, we investigate the energetic and kinetic properties of all the 5d-TM atoms on the 2D substrate to reveal the mechanism of formation of SMAWs. In contrast to other 5d- and 4d-TMs, noble metal elements Pd and Pt are found to prefer to grow along the trough in an atom-by-atom manner, self-assembling into SMAWs with a significant magic growth behavior. This is due to distinct binding energies and diffusion barriers along the trough, i.e., zig-zag direction, as compared to other directions of the BP. The present findings are valuable in the fabrication and modulation of 1D nanostructures which can be anticipated to possess desirable functionalities for potential applications such as in nanocatalysis, nanosensors, and related areas.

Sub-surface alloying largely influences graphene nucleation and growth over transition metal substrates.

Sub-surface alloying (SSA) can be an effective approach to tuning surface functionalities. Focusing on Rh(111) as a typical substrate for graphene nucleation, we show strong modulation by SSA atoms of both the energetics and kinetics of graphene nucleation simulated by first-principles calculations. Counter-intuitively, when the sub-surface atoms are replaced by more active solute metal elements to the left of Rh in the periodic table, such as the early transition metals (TMs), Ru and Tc, the binding between a C atom and the substrate is weakened and two C atoms favor dimerization. Alternatively, when the alloying elements are the late TMs to the right of Rh, such as the relatively inert Pd and Ag, the repulsion between the two C atoms is enhanced. Such distinct results can be well addressed by the delicately modulated activities of the surface host atoms in the framework of the d-band theory. More specifically, we establish a very simple selection rule for optimizing the metal substrate for high quality graphene growth: the introduction of an early (late) solute TM in the SSA lowers (raises) the d-band center and the activity of the top-most host metal atoms, weakening (strengthening) the C-substrate binding, meanwhile both energetically and kinetically facilitating (hindering) the graphene nucleation, and simultaneously promoting (suppressing) the orientation disordering the graphene domains. Importantly, our preliminary theoretical results also show that such a simple rule is also proposed to be operative for graphene growth on the widely invoked Cu(111) catalytic substrate.

Negative Differential Friction Predicted in 2D Ferroelectric In2 Se3 Commensurate Contacts.

At the macroscopic scale, the friction force (f) is found to increase with the normal load (N), according to the classic law of Da Vinci-Amontons, namely, f = µN, with a positive definite friction coefficient (µ). Here, first-principles calculations are employed to predict that, the static force f, measured by the corrugation in the sliding potential energy barrier, is lowered upon increasing the normal load applied on one layer of the recently discovered ferroelectric In2 Se3 over another commensurate layer of In2 Se3 . That is, a negative differential friction coefficient µ can be realized, which thus simultaneously breaking the classic Da Vinci-Amontons law. Such a striking and counterintuitive observation can be rationalized by the delicate interplay of the interfacial van der Waals repulsive interactions and the electrostatic energy reduction due to the enhancement of the intralayer SeIn ionic bonding via charge redistribution under load. The present findings are expected to play an instrumental role in design of high-performance solid lubricants and mechanical-electronic nanodevices.

Role of Ag-doping in small transition metal clusters from first-principles simulations.

First-principles calculations are used to systematically investigate the geometric and electronic structures of both pure TM(n) (n=2-4) and Ag-modulated AgTM(n-1) (n=2-4; 3d-transition metal (TM): from Sc to Cu; 4d-TM: from Y to Ag elements) clusters. Some new ground state structures are found for the pure TM(n) clusters, such as a low symmetry configuration for Cr(3), which is found to be about 0.20 eV more stable than the previously reported C(2v) symmetry. In the most cases, Ag-doping can significantly elongate the bond lengths of the clusters and induce geometric distortions of the small clusters from the high dimensional to the low dimensional configurations. Importantly, introduction of Ag significantly changes the electronic structures of the small clusters and modulates the density of states in the proximity of the Fermi levels, which also varies with the size and the type of the cluster. The results contribute to future design of effective bimetallic alloy Ag/TM catalysts.

Strain Engineering of a Defect-Free, Single-Layer MoS2 Substrate for Highly Efficient Single-Atom Catalysis of CO Oxidation.

Single-atom catalysts (SACs) are of great scientific and technical importance due to their low cost, high site density, and high specificity to enhance chemical reactions. Nevertheless, a major issue that severely limits the practical exploration of SACs is their instability, i.e., the preference of sintering and clustering over a defect-free substrate during operation. Here, we employ first-principles calculations to investigate how substrate engineering can stabilize SACs by strain-tuning the electronic interactions between the metal and the substrate using two Pd adatoms on a defect-free, single-layer MoS2 as a typical example. It is identified that the Pd2 dimer is prone to dissociate and form highly efficient SACs for CO oxidation due to the enhanced charge transfer and orbital hybridization with the MoS2 substrate under a suitable tensile strain. The straining induces a semiconductive-to-metallic phase transition of the substrate. Moreover, low-cost elements, such as Ag, Ni, Cu, and Cr, can also be stabilized into high-performance SACs for CO oxidation with tunable reaction barriers by straining. The present findings offer a new avenue to inhibit the transition metal atoms from clustering into nanoclusters/particles and provide a clear guidance for the development of highly cost-efficient and stable SACs on defect-free substrates.

Ab initio studies on the reaction of O2 with Ba(n) (n=2,5) clusters.

Ab initio theoretical calculations have been performed to study the reaction of O(2) with Ba(n) (n=2,5) clusters. Our results show that O(2) can easily chemisorb and dissociate on small Ba(n) clusters and there is no obvious energy barrier in the process of the dissociation. The local magnetic moment contributed by oxygen must vanish during the intermediate states before the O(2) dissociation. Correspondingly, local magnetic moment only decreases from 2 mu(B) to about 1 mu(B) if O(2) molecularly adsorbs onto Ba(5) cluster. The electronic structure analysis indicates that the charge transfer from Ba(n) cluster to O(2) as well as the orbital hybridization between the cluster and the oxygen molecule may play a key role in O(2) dissociation.