RESUMEN
Owing to the advantages of organic field-effect transistors (OFETs) in the versatility of organic synthesis, multiparameter measurement, and signal amplification, sensors based on OFETs have received increasing attention for detecting volatile organic compounds (VOCs). However, false device operation and gas-sensing measurements often occur to vitiate the advantages of OFETs and even output error gas-sensing signals. In this work, by experimentally and theoretically studying the effects of VOC adsorption on the operational characteristics of the OFET, the proper operations of OFETs in gas-sensing measurements were clarified. The multiparameter measurements of OFETs showed that the source-drain current was the optimized parameter for achieving high responsivity, and other OFET parameters could be used for fingerprint analysis. By operating OFETs in the near-threshold region, the amplification effect was switched to enhance the responsivity by orders of magnitude to VOCs, while in the overthreshold region, the OFETs had a low signal-to-noise ratio. Besides, a counteraction effect and an uncertainty effect were discovered, leading to error gas-sensing signals. A theoretical study was carried out to reveal the dependency of the gas-sensing properties of OFETs on VOC adsorption. A series of rules were proposed for guiding the measurements of OFET sensors by taking full advantage of transistors in gas-sensing applications.
RESUMEN
As one of the most influential environmental factors, drought stress greatly impacts the development and production of plants. Triploid-induced Passiflora edulis Sims 'Mantianxing' is an important new cultivar for multi-resistance variety selective breeding, which is one of the P. edulis breeding essential targets. However, the performance of triploid 'Mantianxing' under drought stress is unknown. In order to study the drought resistance of triploid 'Mantianxing', our study compared drought-related indicators in diploids and triploids under natural drought experiments, including morphological, physiological, and biochemical characteristics. Results showed that triploid P. edulis 'Mantianxing' showed variable responses to drought treatment. Compared with diploids, triploids showed higher photosynthesis and chlorophyll fluorescence, osmotic adjustment substances, and antioxidant enzyme activity under drought stress and faster chlorophyll biosynthesis and growth recovery after rewatering. Generally speaking, these results indicate that the drought resistance of triploid P. edulis is superior to diploid. This study provides scientific information for breeding stress tolerance variety of P. edulis 'Mantianxing' new cultivar.
RESUMEN
The source-drain electrode with a MoO3 interfacial modification layer (IML) is considered the most promising method to solve electrical contact issues impeding organic thin-film transistors (OTFTs) from commercialization. However, this method raises many concerns because MoO3 might diffuse into organic materials, which causes device instability. In this work, we observed a significant device stability degradation by damaging on/off switching performance caused by MoO3 diffusion. To prevent the MoO3 diffusion, a source-drain electrode with a multilayered interface contact (MIC) consisting of a top-down stack of metal, MoO3 IML, and organic buffer layer (OBL) is proposed. In the MIC device, the MoO3 IML serves well for its intended functions of reducing contact resistance and suppressing minority carrier injection to the OTFT channel. The inclusion of OBL to the MIC helps block MoO3 diffusion and thereby leads to better device stability and an increased on/off ratio. Through combinations with several organic compounds as a buffer layer, the MoO3 diffusion related electrical behaviors of OTFTs are systematically studied. Key parameters related to MoO3 diffusion such as the Fick coefficient and bias-stress stability such as carrier trapping time are extracted from numerical device analysis. Finally, we summarize a general rule of material selection for making robust source-drain contact.
RESUMEN
Bias-stress instability has been a challenging problem and a roadblock for developing stable p-type organic field-effect transistors (OFETs). This device instability is hypothesized because of electron-correlated charge carrier trapping, neutralization, and recombination at semiconductor/dielectric interfaces and in semiconductor channels. Here, in this paper, a strategy is demonstrated to improve the bias-stress stability by constructing a multilayered drain electrode with energy-level modification layers (ELMLs). Several organic small molecules with high lowest unoccupied molecular orbital (LUMO) energy levels are experimented as ELMLs. The energy-level offset between the Fermi level of the drain electrode and the LUMOs of the ELMLs is shown to construct the interfacial barrier, which suppresses electron injection from the drain electrode into the channel, leading to significantly improved bias-stress stability of OFETs. The mechanism of the ELMLs on the bias-stress stability is studied by quantitative modeling analysis of charge carrier dynamics. Of all injection models evaluated, it is found that Fowler-Nordheim tunneling describes best the observed experimental data. Both theory and experimental data show that, by using the ELMLs with higher LUMO levels, the electron injection can be suppressed effectively, and the bias-stress stability of p-type OFETs can thereby be improved significantly.