RESUMEN
In this paper, we proposed an ultra-broadband and high absorption rate absorber based on Fe materials. The proposed absorber consists of a rectangle pillar, two rings, a SiO2 film, a Ge2Sb2Te5(GST) planar cavity, an Fe mirror, and a SiO2 substrate. The average absorption reaches 98.45% in the range of 400-4597 nm. We investigate and analyze the electric field distributions. The analysis of the physical mechanism behind the broadband absorption effect reveals that it is driven by excited surface plasmons. Furthermore, the absorber can maintain high absorption efficiency under a large incident angle. The geometrical symmetric structure possesses polarization insensitivity properties. The proposed structure allows for certain manufacturing errors, which improves the feasibility of the actual manufacture. Then, we investigate the effect of different materials on absorption. Finally, we study the matching degree between the energy absorption spectrum and the standard solar spectrum under AM 1.5. The results reveal that the energy absorption spectrum matches well with the standard solar spectrum under AM 1.5 over the full range of 400 to 6000 nm. In contrast, energy loss can be negligible. The absorber possesses ultra-broadband perfect absorption, a high absorption rate, and a simple structure which is easy to manufacture. It has tremendous application potential in many areas, such as solar energy capture, thermal photovoltaics, terminal imaging, and other optoelectronic devices.