RESUMEN
An external-cavity dumped nanosecond (ns) ultra-broad-area laser diode (UBALD) at around 966â nm with high pulse energy is demonstrated. A 1â mm UBALD is used to produce high output power and high pulse energy. A Pockels cell (PC) combines with two polarization beam splitters (PBSs) and is employed to cavity-dump a UBALD operating at 10â kHz repetition rate. At a pump current of 23â A, 11.4â ns pulses with a maximum pulse energy of ≈1.9â µJ and a maximum peak power of ≈166â W are achieved. The beam quality factor is measured to be M x 2=19.5 in the slow axis direction and M y 2=2.17 in the fast axis direction. Moreover, maximum average output power stability is confirmed, with a power fluctuation of less than 0.8% rms over 60â min. To the best of our knowledge, this is the first high-energy external-cavity dumped demonstration from an UBALD.