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1.
Acetylation-mediated proteasomal degradation of core histones during DNA repair and spermatogenesis.
Cell
; 153(5): 1012-24, 2013 May 23.
Artículo
en Inglés
| MEDLINE | ID: mdl-23706739
2.
DDX5 inhibits inflammation by modulating m6A levels of TLR2/4 transcripts during bacterial infection.
EMBO Rep
; 25(2): 770-795, 2024 Feb.
Artículo
en Inglés
| MEDLINE | ID: mdl-38182816
3.
Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter.
Opt Express
; 31(2): 2931-2941, 2023 Jan 16.
Artículo
en Inglés
| MEDLINE | ID: mdl-36785295
4.
Fabricating and investigating a beveled mesa with a specific inclination angle to improve electrical and optical performances for GaN-based micro-light-emitting diodes.
Opt Lett
; 48(22): 5863-5866, 2023 Nov 15.
Artículo
en Inglés
| MEDLINE | ID: mdl-37966738
5.
Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations.
Appl Opt
; 62(13): 3431-3438, 2023 May 01.
Artículo
en Inglés
| MEDLINE | ID: mdl-37132844
6.
Influence of affinity tags and tobacco PR1a signal peptide on detection, purification and bioactivity analyses of the small oomycete apoplastic effectors.
Biotechnol Lett
; 45(1): 115-124, 2023 Jan.
Artículo
en Inglés
| MEDLINE | ID: mdl-36450976
7.
Proteasome subunit α4s is essential for formation of spermatoproteasomes and histone degradation during meiotic DNA repair in spermatocytes.
J Biol Chem
; 296: 100130, 2021.
Artículo
en Inglés
| MEDLINE | ID: mdl-33262216
8.
On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties.
Opt Express
; 30(21): 37675-37685, 2022 Oct 10.
Artículo
en Inglés
| MEDLINE | ID: mdl-36258351
9.
Improving the performance for flip-chip AlGaN-based deep ultraviolet light-emitting diodes using surface textured Ga-face n-AlGaN.
Opt Express
; 30(11): 17781-17788, 2022 May 23.
Artículo
en Inglés
| MEDLINE | ID: mdl-36221592
10.
Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction.
Opt Lett
; 47(4): 798-801, 2022 Feb 15.
Artículo
en Inglés
| MEDLINE | ID: mdl-35167528
11.
Local dielectric tunnel junction to manage the current distribution for AlGaN-based deep-ultraviolet light-emitting diodes with a thin p-GaN layer.
Opt Lett
; 47(14): 3475-3478, 2022 Jul 15.
Artículo
en Inglés
| MEDLINE | ID: mdl-35838707
12.
Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity.
Opt Lett
; 47(6): 1561-1564, 2022 Mar 15.
Artículo
en Inglés
| MEDLINE | ID: mdl-35290364
13.
A Small Cysteine-Rich Phytotoxic Protein of Phytophthora capsici Functions as Both Plant Defense Elicitor and Virulence Factor.
Mol Plant Microbe Interact
; 34(8): 891-903, 2021 Aug.
Artículo
en Inglés
| MEDLINE | ID: mdl-33819070
14.
Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?
Opt Express
; 29(19): 29651-29660, 2021 Sep 13.
Artículo
en Inglés
| MEDLINE | ID: mdl-34614706
15.
Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones.
Opt Express
; 29(19): 30532-30542, 2021 Sep 13.
Artículo
en Inglés
| MEDLINE | ID: mdl-34614776
16.
Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes.
Opt Express
; 29(20): 31201-31211, 2021 Sep 27.
Artículo
en Inglés
| MEDLINE | ID: mdl-34615218
17.
On the impact of a metal-insulator-semiconductor structured n-electrode for AlGaN-based DUV LEDs.
Appl Opt
; 60(36): 11222-11226, 2021 Dec 20.
Artículo
en Inglés
| MEDLINE | ID: mdl-35201112
18.
Numerical investigations into polarization-induced self-powered GaN-based MSM photodetectors.
Appl Opt
; 60(35): 10975-10983, 2021 Dec 10.
Artículo
en Inglés
| MEDLINE | ID: mdl-35200860
19.
Step-type quantum wells with slightly varied InN composition for GaN-based yellow micro light-emitting diodes.
Appl Opt
; 60(11): 3006-3012, 2021 Apr 10.
Artículo
en Inglés
| MEDLINE | ID: mdl-33983194
20.
On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators.
Opt Express
; 28(6): 8668-8679, 2020 Mar 16.
Artículo
en Inglés
| MEDLINE | ID: mdl-32225487