Slow Noncollinear Coulomb Scattering in the Vicinity of the Dirac Point in Graphene.

The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k directions pointing radially away from the Dirac point. Our study reveals, however, that, in almost intrinsic graphene, full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps time scale. This effect is very promising for infrared and THz devices based on hot carrier effects.

Magnetoplasmons in quasineutral epitaxial graphene nanoribbons.

We present an infrared transmission spectroscopy study of the inter-Landau-level excitations in quasineutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the L(0(-1)) → L(1(0)) transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of an upper-hybrid mode between the Landau-level transition and the plasmon resonance. In the quantum regime, the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene.

Nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon.

Owing to its two-dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO2 sphere that have nonmatching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphene's strong potential in photonic near field and energy conversion devices.

Resonant excitation of graphene k-phonon and intra-landau-level excitons in magneto-optical spectroscopy [corrected].

Precise infrared magnetotransmission experiments have been performed in magnetic fields up to 32 T on a series of multilayer epitaxial graphene samples. We observe changes in the spectral features and broadening of the main cyclotron transition when the incoming photon energy is in resonance with the lowest Landau level separation and the energy of a K point optical phonon. We have developed a theory that explains and quantitatively reproduces the frequency and magnetic field dependence of the phenomenon as the absorption of a photon together with the simultaneous creation of an intervalley, intra-Landau-level exciton, and a K phonon.

How metallic are small sodium clusters?

Cryogenic cluster beam experiments have provided crucial insights into the evolution of the metallic state from the atom to the bulk. Surprisingly, one of the most fundamental metallic properties, the ability of a metal to efficiently screen electric fields, is still poorly understood in small clusters. Theory has predicted that many small Na clusters are unable to screen charge inhomogeneities and thus have permanent dipole moments. High precision electric deflection experiments on cryogenically cooled Na(N) (N<200) clusters show that the electric dipole moments are at least an order of magnitude smaller than predicted, and are consistent with zero, as expected for a metal. The polarizabilities of Na clusters also show metal sphere behavior, with fine size oscillations caused by the shell structure.

Carrier scattering from dynamical magnetoconductivity in quasineutral epitaxial graphene.

The energy dependence of the electronic scattering time is probed by Landau level spectroscopy in quasineutral multilayer epitaxial graphene. From the broadening of overlapping Landau levels we find that the scattering rate 1/τ increases linearly with energy ϵ. This implies a surprising property of the Landau level spectrum in graphene-the number of resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanisms and carrier mobilities in the graphene system investigated.

Carrier relaxation in epitaxial graphene photoexcited near the Dirac point.

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 to 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical-phonon frequency; however, owing to the presence of hot carriers, optical-phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields.

Magneto-Raman scattering study of the E2g optical phonons in multilayer epitaxial graphene grown on a carbon face of SiC is presented. At 4.2 K in magnetic field up to 33 T, we observe a series of well-pronounced avoided crossings each time the optically active inter-Landau level transition is tuned in resonance with the E2g phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.

First direct observation of a nearly ideal graphene band structure.

Angle-resolved photoemission and x-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(0001) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films causes adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K point. Each cone corresponds to an individual macroscale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

Magnetism from the atom to the bulk in iron, cobalt, and nickel clusters.

Molecular beam deflection measurements of small iron, cobalt, and nickel clusters show how magnetism develops as the cluster size is increased from several tens to several hundreds of atoms for temperatures between 80 and 1000 K. Ferromagnetism occurs even for the smallest sizes: for clusters with fewer than about 30 atoms the magnetic moments are atomlike; as the size is increased up to 700 atoms, the magnetic moments approach the bulk limit, with oscillations probably caused by surface-induced spin-density waves. The trends are explained in a magnetic shell model. A crystallographic phase transition from high moment to low moment in iron clusters has also been identified.

Time-resolved spectroscopy on epitaxial graphene in the infrared spectral range: relaxation dynamics and saturation behavior.

We present the results of pump­probe experiments on multilayer graphene samples performed in a wide spectral range, namely from the near infrared (photon energy 1.5 eV) to the terahertz (photon energy 8 meV) spectral range. In the near infrared, exciting carriers and probing at higher photon energies provides direct evidence for a hot carrier distribution. Furthermore, spectroscopic signatures of the highly doped graphene layers at the interface to SiC are observed in the near-infrared range. In the mid-infrared range, the various relaxation mechanisms, in particular scattering via optical phonons and Auger-type processes, are identified by comparing the experimental results to microscopic modeling. Changes from induced transmission to induced absorption are attributed to probing above or below the Fermi edge of the graphene layers. This effect occurs for certain photon energies in the near-infrared range, where it is related to highly doped graphene layers at the interface to SiC, and in the far-infrared range for the quasi-intrinsic graphene layers. In addition to the relaxation dynamics, the saturation of pump-induced bleaching of graphene is studied. Here a quadratic dependence of the saturation fluence on the pump photon energy in the infrared spectral range is revealed.

Scalable templated growth of graphene nanoribbons on SiC.

In spite of its excellent electronic properties, the use of graphene in field-effect transistors is not practical at room temperature without modification of its intrinsically semimetallic nature to introduce a bandgap. Quantum confinement effects can create a bandgap in graphene nanoribbons, but existing nanoribbon fabrication methods are slow and often produce disordered edges that compromise electronic properties. Here, we demonstrate the self-organized growth of graphene nanoribbons on a templated silicon carbide substrate prepared using scalable photolithography and microelectronics processing. Direct nanoribbon growth avoids the need for damaging post-processing. Raman spectroscopy, high-resolution transmission electron microscopy and electrostatic force microscopy confirm that nanoribbons as narrow as 40 nm can be grown at specified positions on the substrate. Our prototype graphene devices exhibit quantum confinement at low temperatures (4 K), and an on-off ratio of 10 and carrier mobilities up to 2,700 cm(2) V(-1) s(-1) at room temperature. We demonstrate the scalability of this approach by fabricating 10,000 top-gated graphene transistors on a 0.24-cm(2) SiC chip, which is the largest density of graphene devices reported to date.

Approaching the dirac point in high-mobility multilayer epitaxial graphene.

Multilayer epitaxial graphene is investigated using far infrared transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance-like absorption is observed at low temperature in magnetic fields below 50 mT, probing the nearest vicinity of the Dirac point. The carrier mobility is found to exceed 250,000 cm2/(V x s). In the limit of high temperatures, the well-defined Landau level quantization is observed up to room temperature at magnetic fields below 1 T, a phenomenon unusual in solid state systems. A negligible increase in the width of the cyclotron resonance lines with increasing temperature indicates that no important scattering mechanism is thermally activated.

High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy.

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.

Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene.

We show experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via first-principles calculation, we demonstrate that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point. This explains prior experimental results that showed single-layer electronic properties, even for epitaxial graphene films tens of layers thick.

Substrate-induced bandgap opening in epitaxial graphene.

Graphene has shown great application potential as the host material for next-generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is the lack of an energy gap in its electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here, we show that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe that our results highlight a promising direction for bandgap engineering of graphene.

Landau level spectroscopy of ultrathin graphite layers.

Far infrared transmission experiments are performed on ultrathin epitaxial graphite samples in a magnetic field. The observed cyclotron resonance-like and electron-positron-like transitions are in excellent agreement with the expectations of a single-particle model of Dirac fermions in graphene, with an effective velocity of c=1.03 x 10(6) m/s.

Nanomechanics of individual carbon nanotubes from pyrolytically grown arrays.

The bending modulus of individual carbon nanotubes from aligned arrays grown by pyrolysis was measured by in situ electromechanical resonance in transmission electron microscopy (TEM). The bending modulus of nanotubes with point defects was approximately 30 GPa and that of nanotubes with volume defect was 2-3 GPa. The time-decay constant of nanotube resonance in a vacuum of 10(-4) Torr was approximately 85 micros. A femtogram nanobalance was demonstrated based on nanotube resonance; it has the potential for measuring the mass of chain-structured large molecules. The in situ TEM provides a powerful approach towards nanomechanics of fiberlike nanomaterials with well-characterized defect structures.