Electroluminescent vertical tunneling junctions based on WSe2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields.

We experimentally demonstrate the creation of defects in monolayer WSe2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.

Recent Advances in Electroluminescent Metallic Nanoclusters: From Materials to Devices.

Metallic nanoclusters (MNCs) were developed rapidly in recent decades, owing to their unique electronic structures and excited state characteristics, leading to their wide applications. Luminescence as one of the most important functions for MNCs has also been used to realize biodetection, displays, and lighting, through either electrochemiluminescence (ECL) or electroluminescence (EL). Both emissive properties and electrochemical activities of MNCs were utilized to enhance ECL and EL through facilitating exciton formation and radiation, rendering the rapid emerging of the latter in the last ten years. Through ligand modification, radiative excited-state components were increased to realize state-of-the-art photo- and electroluminescence efficiencies up to ∼100% and ∼30%, as well as ultralow biodetection limits. Nonetheless, material selection space and processing technologies are still limited. Herein, we overview and discuss recent advances of MNCs-based ECL and EL, through both aspects of materials/systems and devices, which would enlighten continuous innovations in optoelectronic MNCs.

Matrix-Free Thermally Activated Delayed Fluorescent Carbon Dots-Based Electroluminescent Light-Emitting Diodes Exceeding 5.6% External Quantum Efficiency.

Carbon dots (CDs) are promising luminescent emission layer materials for next generation electroluminescent light emitting diodes (EL-LEDs) due to their many advantages, such as environmental friendliness, low cost, and high stability. However, limited by the spin-forbidden properties of the triplet transition, it is difficult to improve the external quantum efficiency (EQE) of fluorescent CDs-based EL-LEDs. Meanwhile, traditional thermally activated delayed fluorescent (TADF) CDs prepared using coating strategies are difficult to utilize in EL-LEDs due to the nonconductivity of the coating agent. Herein, we successfully developed matrix-free TADF CDs with yellow emission and achieved a device EQE of 5.68%, which is the highest value reported in CDs-based EL-LEDs. In addition, we also developed white EL-LEDs with an EQE of 1.70%. This study highlights the importance of interactions between precursors in modulating the electroluminescence properties of TADF emitters and provides an effective design principle for matrix-free TADF CDs.

An Electrically Pumped Topological Polariton Laser.

With a seminal work of Raghu and Haldane in 2008, concepts of topology have been introduced into optical systems, where some of the most promising routes to an application are efficient and highly coherent topological lasers. While some attempts have been made to excite such structures electrically, the majority of published experiments use a form of laser excitation. In this paper, we use a lattice of vertical resonator polariton micropillars to form an exponentially localized topological Su-Schrieffer-Heeger defect. Upon electrical excitation, the system unequivocally shows polariton lasing from the topological defect using a carefully placed gold contact. Despite the presence of doping and electrical contacts, the polariton band structure clearly preserves its topological properties. At high excitation power the Mott density is exceeded, leading to highly efficient lasing in the weak coupling regime. This work is an important step toward applied topological lasers using vertical resonator microcavity structures.

Efficient, Color-Stable, Pure-Blue Light-Emitting Diodes Based on Aromatic Ligand-Engineered Perovskite Nanoplatelets.

Perovskite nanoplatelets (NPLs) show great potential for high-color-purity light-emitting diodes (LEDs) due to their narrow line width and high exciton binding energy. However, the performance of perovskite NPL LEDs lags far behind perovskite quantum dot-/film-based LEDs, owing to their material instability and poor carrier transport. Here, we achieved efficient and stable pure blue-emitting CsPbBr3 NPLs with outstanding optical and electrical properties by using an aromatic ligand, 4-bromothiophene-2-carboxaldehyde (BTC). The BTC ligands with thiophene groups can guide two-dimensional growth and inhibit out-of-plane ripening of CsPbBr3 NPLs, which, meanwhile, increases their structural stability via strongly interacting with PbBr64- octahedra. Moreover, aromatic structures with delocalized π-bonds facilitate charge transport, diminish band tail states, and suppress Auger processes in CsPbBr3 NPLs. Consequently, the LEDs demonstrate efficient and color-stable blue emissions at 465 nm with a narrow emission line width of 17 nm and a maximum external quantum efficiency (EQE) of 5.4%, representing the state-of-the-art CsPbBr3 NPL LEDs.

Solution Synthesis and Light-Emitting Applications of One-Dimensional Lead-Free Cerium(III) Metal Halides.

Combining rare earth elements with the halide perovskite structure offers valuable insights into designing nonlead (Pb) luminescent materials. However, most of these compositions tend to form zero-dimensional (0D) networks of metal-halide polyhedra, with higher-dimensional (1D, 2D, and 3D) structures receiving relatively less exploration. Herein, we present synthesis and optical properties of Cs3CeCl6·3H2O, characterized by its unique 1D crystal structure. The conduction band minimum of Cs3CeCl6·3H2O becomes less localized as a result of the increased structural dimension, making it possible for the materials to achieve an efficient electrical injection. For both Cs3CeCl6·3H2O single crystals and nanocrystals, we also observed remarkable luminescence with near-unity photoluminescence quantum yield and exceptional phase stability. Cs3CeCl6·3H2O single crystals demonstrate an X-ray scintillation light yield of 31900 photons/MeV, higher than that of commercial LuAG:Ce (22000 photons/MeV); electrically driven light-emitting diodes fabricated with Cs3CeCl6·3H2O nanocrystals yield the characteristic emission of Ce3+, indicating their potential use in next-generation violet-light-emitting devices.

Determining Transmission Characteristics from Shot-Noise-Driven Electroluminescence in Single-Molecule Junctions.

Biased metal-molecule-metal junctions emit light through electroluminescence, a phenomenon at the intersection of molecular electronics and nanoplasmonics. This can occur when the junction plasmon mode is excited by inelastic electron current fluctuations. Here, we simultaneously measure the conductance and electroluminescence intensity from single-molecule junctions with time resolution in a solution environment at room temperature. We use current versus bias data to determine the molecular junction transport parameters and then relate these to the expected current shot noise. We find that the electroluminescence signal accurately matches the theoretical prediction of shot-noise-driven emission in a large fraction of the molecular junctions studied. This introduces a novel experimental method for qualitatively estimating finite-frequency shot noise in single-molecule junctions under ambient conditions. We further demonstrate that electroluminescence can be used to obtain the level alignment of the frontier orbital dominating transport in the molecular junction.

Stretchable and Breathable Electroluminescent Displays Based on Ultrathin Nanocomposite Designs.

Stretchable electroluminescent devices represent an emerging optoelectronic technology for future wearables. However, their typical construction on sub-millimeter-thick elastomers has limited moisture permeability, leading to discomfort during long-term skin attachment. Although breathable textile displays may partially address this issue, they often have distinct visual appearances with discrete emissions from fibers or fiber junctions. This study introduces a convenient procedure to create stretchable, permeable displays with continuous luminous patterns. The design utilizes ultrathin nanocomposite devices embedded in a porous elastomeric microfoam to achieve high moisture permeability. These displays also exhibit excellent deformability, low-voltage operation, and excellent durability. Additionally, the device is decorated with fluorinated silica nanoparticles to achieve self-cleaning and washable capabilities. The practical implementation of these nanocomposite devices is demonstrated by creating an epidermal counter display that allows intimate integration with the human body. These developments provide an effective design of stretchable and breathable displays for comfortable wearing.

Narrowband Electroluminescence from Color Centers in Hexagonal Boron Nitride.

Defects in wide bandgap materials have emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of single emitters may lead to scalable on-chip devices and therefore is highly sought after. However, most wide bandgap materials are not amenable to efficient doping, posing challenges for electrical excitation and on-chip integration. Here, we demonstrate narrowband electroluminescence from visible and near-infrared color centers in hexagonal boron nitride (hBN). We harness van der Waals tunnel junctions of graphene-hBN-graphene. Charge carriers are electrically injected into hBN, exciting localized defects that emit nonclassical light, as characterized by the second order correlation measurement. Remarkably, the devices operate at room temperature and produce robust, narrowband emission spanning from visible to the near-infrared. Our work marks an important milestone in vdW materials and their promising attributes for integrated quantum technologies and on-chip photonic circuits.

Interfacial Triboelectricity Lights Up Phosphor-Polymer Elastic Composites: Unraveling the Mechanism of Mechanoluminescence in Zinc Sulfide Microparticle-Embedded Polydimethylsiloxane Films.

Composites comprising copper-doped zinc sulfide phosphor microparticles embedded in polydimethylsiloxane (ZnS:Cu-PDMS) have received significant attention over the past decade because of their bright and durable mechanoluminescence (ML); however, the underlying mechanism of this unique ML remains unclear. This study reports empirical and theoretical findings that confirm this ML is an electroluminescence (EL) of the ZnS:Cu phosphor induced by the triboelectricity generated at the ZnS:Cu microparticle-PDMS matrix interface. ZnS:Cu microparticles that exhibit bright ML are coated with alumina, an oxide with strong positive triboelectric properties; the contact separation between this oxide coating and PDMS, a polymer with strong negative triboelectric properties, produces sufficient interfacial triboelectricity to induce EL in ZnS:Cu microparticles. The ML of ZnS:Cu-PDMS composites varies on changing the coating material, exhibiting an intensity that is proportional to the amount of interfacial triboelectricity generated in the system. Finally, based on these findings, a mechanism that explains the ML of phosphor-polymer elastic composites (interfacial triboelectric field-driven alternating-current EL model) is proposed in this study. It is believed that understanding this mechanism will enable the development of new materials (beyond ZnS:Cu-PDMS systems) with bright and durable ML.

Enhanced Stability and Highly Bright Electroluminescence of AgInZnS/CdS/ZnS Quantum Dots through Complete Isolation of Core and Shell via a CdS Interlayer.

An approach for synthesizing AgInZnS/CdS/ZnS core-shell-shell quantum dots (QDs) that demonstrate exceptional stability and electroluminescence (EL) performance is introduced. This approach involves incorporating a cadmium sulfide (CdS) interlayer between an AgInZnS (AIZS) core and a zinc sulfide (ZnS) shell to prevent the diffusion of Zn ions into the AIZS core and the cation exchange at the core-shell interface. Consequently, a uniform and thick ZnS shell, with a thickness of 2.9 nm, is formed, which significantly enhances the stability and increases the photoluminescence quantum yield (87.5%) of the QDs. The potential for AIZS/CdS/ZnS QDs in electroluminescent devices is evaluated, and an external quantum efficiency of 9.6% in the 645 nm is achieved. These findings highlight the importance of uniform and thick ZnS shells in improving the stability and EL performance of QDs.

Phase Engineering Reinforced Energy Transfer for High-Performance Blue Perovskite Light-Emitting Diodes.

Layered metal-halide perovskites, a category of self-assembled quantum wells, are of paramount importance in emerging photonic sources, such as lasers and light-emitting diodes (LEDs). Despite high trap density in two-dimensional (2D) perovskites, efficient non-radiative energy funneling from wide- to narrow-bandgap components, sustained by the Förster resonance energy transfer (FRET) mechanism, contributes to efficient luminescence by light or electrical injection. Herein, it is demonstrated that bandgap extension of layered perovskites to the blue-emitting regime will cause sluggish and inefficient FRET, stemming from the tiny spectral overlap between different phases. Motivated by the importance of blue LEDs and inefficient energy transfer in materials with phase polydispersity, wide-bandgap quasi-2D perovskites with narrow phase distribution, improved crystallinity, and the pure crystal orientation perpendicular to the charge transport layer are developed. Based on this emitter, high-performance blue perovskite LEDs with improved electroluminescence (EL) external quantum efficiency (EQE) of 7.9% at 478 nm, a narrow full width at half-maximum (FWHM) of 22 nm and a more stable EL spectra are achieved. These results provide an important insight into spectrally stable and efficient blue emitters and EL devices based on perovskites.

Exploring Robust Delayed Fluorescence Materials via Structural Rigidification for Realizing Organic Light-Emitting Diodes with High Efficiencies and Small Roll-Offs.

Thermally activated delayed fluorescence (TADF) materials have been widely studied for the fabrication of high-performance organic light-emitting diodes (OLEDs), but the serious efficiency roll-offs still remain unsolved in most cases. Herein, it is wish to report a series of robust green TADF compounds containing rigid xanthenone acceptor and acridine-based spiro donors. The enhancement in molecular rigidity not only endows the compounds with improved thermal stability but also results in reduced geometric vibrations and thus lowered reorganization energies. These compounds exhibit distinct merits of high thermal stabilities, excellent photoluminescence quantum efficiencies (96%-97%), large horizontal dipole orientation ratios (87.4%-92.1%) and fast TADF rates (1.4-1.5 × 106 s-1 ). The OLEDs using them as emitters furnish superb electroluminescence performances with outstanding external quantum efficiencies (ηext s) of up to 37.4% and very small efficiency roll-offs. Moreover, highly efficient hyperfluorescence OLEDs are obtained by using them as sensitizers for the green mutilresonance TADF emitter BN2, delivering excellent ηext s of up to 34.2% and improved color purity. These results disclose the high potential of these TADF compounds as emitters and sensitizers for OLEDs.

Regulating Excited States by Varying Different Acceptors of D-π-A Emitters for Efficient Non-Doped Blue Electroluminescence with High Luminance and Low Efficiency Roll-Off.

Chromophores with hybridized local and charge-transfer (HLCT) excited state are promising for the realization of high performance blue organic light-emitting diodes (OLEDs). The rational manipulation of HLCT excited state for efficient emitters remains challenging. Herein, we present three donor-π-acceptor (D-π-A) molecules (mPAN, mPANPH, and mPNAPH) with phenanthro[9,10-d]imidazole (PI) and pyridinyl as donor and π-bridge respectively. Changes in various kinds of polycyclic aromatic derivative acceptors (anthracene, 9-phenylanthracene, and 1-phenylnaphthalene) could manipulate the excited states and optoelectronic properties. Theoretical calculations reveal that the S1 state of mPNAPH exhibits HLCT nature while the other two molecules show local excited (LE) state dominated feature. The photophysical properties also demonstrate this characteristic. Therefore, compared with mPAN and mPANPH, mPNAPH has higher photoluminescence quantum yield (PLQY) whether in solutions or neat films. Ultimately, the non-doped devices based on these emitters show high luminance larger than 35000 cd m-2 , and high maximum external quantum efficiencies (EQEmax s) larger than 5 % with low efficiency roll-off. In particular, the mPNAPH-based device displays an excellent performance of pure blue emission at 456 nm with Commission Internationale de L'Eclairage coordinate of (0.15, 0.16) and EQEmax of 6.13 % that benefited from the HLCT state and high-lying reverse intersystem crossing process.

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals.

Room temperature lateral p+-i-n+light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+and n+contact regions made it possible to reduce the impurity activation temperature from 800 °Ð¡-1100 °Ð¡ to 600 °Ð¡, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55µm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55µm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

Three new red neutral and ionic iridium(III) complexes based on the same main ligand and auxiliary ligand but with different counterions for solution-processed organic light-emitting diodes.

Three new neutral and ionic phosphorescent iridium(III) complexes were successfully prepared using 1-(6-methoxynaphthalen-2-yl)isoquinoline as the main ligand, while the auxiliary ligand was 2-(2-1H-imidazolyl)pyridine. Three complexes (Ir1, Ir2, Ir3) showed red emission, peaking at 610, 609, and 615 nm, respectively, and they exhibited good solubility and excellent photophysical properties in different solvents, which is suitable to prepare organic light-emitting diodes (OLEDs) by solution method. Among the three OLEDs prepared by iridium(III) complexes using the solution method, the device based on Ir2 possessed better electroluminescent properties, and its maximum brightness, current efficiency (CE), power efficiency (PE), and the maximum external quantum efficiency (EQE) were 507.2 cd m-2 , 0.14 cd A-1 , 0.06 lm W-1 , and 0.14%. respectively, proving that the three complexes have a certain of potential for OLEDs applications and are expected to expand the applications of iridium(III) complexes for OLEDs.

Detection of pathogenic gram-negative bacteria using an antimicrobial peptides-modified bipolar electrode-electrochemiluminescence platform.

Real-time, label-free detection of gram-negative bacteria with high selectivity and sensitivity is demonstrated using a bipolar electrode-electrochemiluminescence (BPE-ECL) platform. This platform utilizes anode luminescence and cathode modification of antimicrobial peptides (AMPs) to effectively capture bacteria. Magainin I, basic AMP from Xenopus skin, boasting an α-helix structure, exhibits a preferential affinity for the surface of gram-negative pathogens. The covalent attachment of the peptide's C-terminal carboxylic acid to the free amines of a previously thiolated linker ensures its secure immobilization onto the surface of the interdigitated gold-plated cathode of BPE. The AMP-modified BPE sensor, when exposed to varying concentrations of gram-negative bacteria, produces reproducible ECL intensities, allowing for the detection of peptide-bacteria interactions within the range 1 to 104 CFU mL-1. Furthermore, this AMP-modified BPE sensor demonstrates a selective capacity to detect Escherichia coli O157:H7 amidst other gram-negative strains, even at a concentration of 1-CFU mL-1. This study underscores the high selectivity of Magainin I in bacterial detection, and the AMP-modified BPE-ECL system holds significant promise for rapid detection of gram-negative bacteria in various applications. The AMP-modified BPE sensor generated reproducible ECL intensity that detected peptide-bacteria interactions in the range 1 to 104 CFU mL-1. The AMP-modified BPE sensor also selectively detected E. coli O157:H7 from other gram-negative strains at a concentration of 1-CFU mL-1. In this paper, AMP demonstrated high selectivity in bacterial detection. The AMP-modified BPE-ECL system prepared has a great potential for application in the field of rapid detection of gram-negative bacteria.

Methodology for Calculating the Damaged Surface and Its Relationship with Power Loss in Photovoltaic Modules by Electroluminescence Inspection for Corrective Maintenance.

Photovoltaic panels are exposed to various external factors that can cause damage, with the formation of cracks in the photovoltaic cells being one of the most recurrent issues affecting their production capacity. Electroluminescence (EL) tests are employed to detect these cracks. In this study, a methodology developed according to the IEC TS 60904-13 standard is presented, allowing for the calculation of the percentage of type C cracks in a PV panel and subsequently estimating the associated power loss. To validate the methodology, it was applied to a polycrystalline silicon module subjected to incremental damage through multiple impacts on its rear surface. After each impact, electroluminescence images and I-V curves were obtained and used to verify power loss estimates. More accurate estimates were achieved by assessing cracks at the PV cell level rather than by substring or considering the entire module. In this context, cell-level analysis becomes indispensable, as the most damaged cell significantly influences the performance of the photovoltaic model. Subsequently, the developed methodology was applied to evaluate the conditions of four photovoltaic panels that had been in operation, exemplifying its application in maintenance tasks. The results assisted in decision making regarding whether to replace or continue using the panels.

Damage Characteristics Analysis of Laser Ablation Triple-Junction Solar Cells Based on Electroluminescence Characteristics.

To study the physical property effects of the laser on GaInP/GaAs/Ge solar cells and their sub-cell layers, a pulsed laser with a wavelength of 532 nm was used to irradiate the solar cells under various energy conditions. The working performance of the cell was measured with a source meter. The electroluminescence (EL) characteristics were assessed using an ordinary and an infrared camera. Based on the detailed balance theory, in the voltage characteristics of an ideal pristine cell, the GaInP layer made the most significant voltage contribution, followed by the GaAs layer, with the Ge layer contributing the least. When a bias voltage was applied to the pristine cell, the top GaInP cell emitted red light at 670 nm, the middle GaAs cell emitted near-infrared light at 926 nm, and the bottom Ge cell emitted infrared light at 1852 nm. In the experiment, the 532 nm laser wavelength within the response spectrum bands of the GaInP layer and the laser passed through the glass cover slip and directly interacted with the GaInP layer. The experimental results indicated that the GaInP layer first exhibited different degrees of damage under laser irradiation, and the cell voltage was substantially attenuated. The GaInP/GaAs/Ge solar cell showed a decrease in electrical and light emission characteristics. As the laser energy increased, the cell's damage intensified, gradually leading to a loss of photoelectric conversion capability, the near-complete disappearance of red light emission, and a gradual degradation of near-infrared emission properties. The EL imaging revealed varying damage states across the triple-junction gallium arsenide solar cell's sub-cells.

Passive Electroluminescence and Photoluminescence Imaging Acquisition of Photovoltaic Modules.

In photovoltaic power plant inspections, techniques for module assessment play a crucial role as they enhance fault detection and module characterization. One valuable technique is luminescence. The present paper introduces a novel technique termed passive luminescence. It enhances both electroluminescence and photoluminescence imaging acquisition in photovoltaic power plants under normal operation in high irradiance conditions. This technique is based on the development of an electronic board, which allows the polarity of the module to be changed, enabling the current generated by the photovoltaic string to be injected into the module and producing electroluminescence effects. Additionally, the board can bypass the module and set an open circuit, inducing photoluminescence emission using sunlight as an excitation source. The proper coordination of the board and an InGaAs camera with a bandpass filter has allowed for the integration of a lock-in technique, which has produced electroluminescence and photoluminescence pictures that can be used for fault detection.