Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide.

Extended defects in wide-bandgap semiconductors have been widely investigated using techniques providing either spectroscopic or microscopic information. Nano-Fourier transform infrared spectroscopy (nano-FTIR) is a nondestructive characterization method combining FTIR with nanoscale spatial resolution (∼20 nm) and topographic information. Here, we demonstrate the capability of nano-FTIR for the characterization of extended defects in semiconductors by investigating an in-grown stacking fault (IGSF) present in a 4H-SiC epitaxial layer. We observe a local spectral shift of the mid-infrared near-field response, consistent with the identification of the defect stacking order as 3C-SiC (cubic) from comparative simulations based on the finite dipole model (FDM). This 3C-SiC IGSF contrasts with the more typical 8H-SiC IGSFs reported previously and is exemplary in showing that nanoscale spectroscopy with nano-FTIR can provide new insights into the properties of extended defects, the understanding of which is crucial for mitigating deleterious effects of such defects in alternative semiconductor materials and devices.

Thermal Equation of State of Cubic Silicon Carbide at High Pressures.

We have performed in situ X-ray diffraction measurements of cubic silicon carbide (SiC) with a zinc-blende crystal structure (B3) at high pressures and temperatures using multi-anvil apparatus. The ambient volume inferred from the compression curves is smaller than that of the starting material. Using the 3rd-order Birch-Murnaghan equation of state and the Mie-Grüneisen-Debye model, we have determined the thermoelastic parameters of the B3-SiC to be K0=228±3 GPa, K0',=4.4±0.4, q=0.27±0.37, where K0, K0' and q are the isothermal bulk modulus, its pressure derivative and logarithmic volume dependence of the Grüneisen parameter, respectively. Using the 3rd-order Birch-Murnaghan EOS with the thermal expansion coefficient, the thermoelastic parameters have been found as K0=221±3 GPa, K0',=5.2±0.4, α0=0.90±0.02 ⋅ 10-5 ⋅ K-1, where α0 is the thermal expansion coefficient at room pressure and temperature. We have determined that paired B3-SiC - MgO calibrants can be used to estimate pressure and temperature simultaneously in ultrahigh-pressure experiments up to 60 GPa.

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.

The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the [Formula: see text], yet fine-tuning the defect-cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the [Formula: see text] optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies. Below-bandgap irradiation at 785-nm and 532-nm wavelengths carried out at times ranging from a few minutes to several hours results in stable enhancement of emission, believed to result from changing the relative ratio of [Formula: see text] ("dark state") to [Formula: see text] ("bright state"). The much faster change effected by 532-nm irradiation may result from cooperative charge-state conversion due to proximal defects. Thermal annealing at 100 °C, carried out over 20 min, also results in emission enhancements and may be explained by the relatively low-activation energy diffusion of carbon interstitials [Formula: see text], subsequently recombining with other defects to create additional [Formula: see text]s. These PCC-enabled experiments reveal insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improved defect-cavity interactions.

Influence of SiC and ZnO Doping on the Electrical Performance of Polylactic Acid-Based Triboelectric Nanogenerators.

Polylactic acid (PLA) is one of the most widely used materials for fused deposition modeling (FDM) 3D printing. It is a biodegradable thermoplastic polyester, derived from natural resources such as corn starch or sugarcane, with low environmental impact and good mechanical properties. One important feature of PLA is that its properties can be modulated by the inclusion of nanofillers. In this work, we investigate the influence of SiC and ZnO doping of PLA on the triboelectric performance of PLA-based tribogenerators. Our results show that the triboelectric signal in ZnO-doped PLA composites increases as the concentration of ZnO in PLA increases, with an enhancement in the output power of 741% when the ZnO concentration in PLA is 3 wt%. SiC-doped PLA behaves in a different manner. Initially the triboelectric signal increases, reaching a peak value with enhanced output power by 284% compared to undoped PLA, when the concentration of SiC in PLA is 1.5 wt%. As the concentration increases to 3 wt%, the triboelectric signal reduces significantly and is comparable to or less than that of the undoped PLA. Our results are consistent with recent data for PVDF doped with silicon carbide nanoparticles and are attributed to the reduction in the contact area between the triboelectric surfaces.

Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes.

Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using a surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin-defect-based quantum applications in mature SiC materials.

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications.

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current-voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 1016 ion/cm2 at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

Purification and preparation of pure SiC with silicon cutting waste.

Recycling silicon cutting waste (SCW) plays a pivotal role in reducing environmental impact and enhancing resource efficiency within the semiconductor industry. Herein SCW was utilized to prepare SiC and ultrasound-assisted leaching was investigated to purify the obtained SiC and the leaching factors were optimized. The mixed acids of HF/H2SO4 works efficiently on the removal of Fe and SiO2 due to that HF can react with SiO2 and Si and then expose the Fe to H+. The assistance of ultrasound can greatly improve the leaching of Fe, accelerate the leaching rate, and lower the leaching temperature. The optimal leaching conditions are HF-H2SO4 ratio of 1:3, acid concentration of 3 mol/L, temperature of 50 °C, ultrasonic frequency of 45 kHz and power of 210 W, and stirring speed of 300 rpm. The optimal leaching ratio of Fe is 99.38%. Kinetic analysis shows that the leaching process fits the chemical reaction-controlled model.

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis).

High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2-1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = -1.2 MHz) and anisotropic (b = 10-20 kHz) contributions of the electron-nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin-photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

Quantum systems in silicon carbide for sensing applications.

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

A direct experimental comparison of single-crystal CVD diamond and silicon carbide X-ray beam position monitors.

Single-crystal chemical vapour deposition (CVD) diamond detectors are an established transmissive synchrotron beamline diagnostic instrument used for beam position and beam intensity monitoring. A recently commercialized alternative is silicon carbide (4H-SiC) devices. These have the potential to provide the same diagnostic information as commercially available single-crystal CVD diamond X-ray beam position monitors, but with a much larger transmissive aperture. At Diamond Light Source an experimental comparison of the performance of single-crystal CVD diamond and 4H-SiC X-ray beam position monitors has been carried out. A quantitative comparison of their performance is presented in this paper. The single-crystal diamond and 4H-SiC beam position monitors were installed in-line along the synchrotron X-ray beam path enabling synchronous measurements at kilohertz rates of the beam motion from both devices. The results of several tests of the two position monitors' performance are presented: comparing signal uniformity across the surface of the detectors, comparing kHz intensity measurements, and comparing kHz beam position measurements from the detectors. Each test is performed with a range of applied external bias voltages. A discussion of the benefits and limitations of 4H-SiC and single-crystal CVD diamond detectors is included.

Direct synthesis of nanopatterned epitaxial graphene on silicon carbide.

This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene on silicon carbide on silicon substrates. A catalytic alloy tailored to optimal SiC graphitization is pre-patterned with common lithography and lift-off techniques to form planar graphene structures on top of an unpatterned SiC layer. This method is compatible with both electron-beam lithography and UV-lithography, and graphene gratings down to at least ∼100 nm width/space can be realized at the wafer scale. The minimum pitch is limited by the flow of the metal catalyst during the liquid-phase graphitization process. We expect that the current pitch resolution could be further improved by optimizing the metal deposition method and lift-off process.

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide.

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.

Structural, mechanical, electronic and optical properties of N-decorated single-walled silicon carbide nanotube photocatalyst for hydrogen evolution via water splitting: a DFT study.

This work investigates the fundamental photocatalytic properties of nitrogen-doped single-walled silicon carbide nanotubes (N-doped SWSiCNTs) for hydrogen evolution for the first time. Investigations of the structural, mechanical, electronic, and optical properties of the studied systems were carried out using popular density functional theory implemented in quantum ESPRESSO and Yambo codes. Analysis of the structural properties revealed high mechanical stability with the 3.6% and 7.4% N-doped SWSiCNT. The calculated band gap of the N-doped SWSiCNT with 3.6% demonstrated a value of 2.56 eV which is within the photocatalytic range of 2.3 eV-2.8 eV. The hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) potentials of the 3.6% N-doped SWSiCNT also showed good agreement with previous theoretical data. The studied material showed the best photocatalytic performance in both parallel and perpendicular directions by absorbing photons in the visible region. Therefore, the observed structural, mechanical, electronic and optical behaviors demonstrated by the 3.6% N-doped SWSiCNT exposed it as a better photocatalyst for hydrogen production under visible light.

The Estimated Temperature of the Semiconductor Diode Junction on the Basis of the Remote Thermographic Measurement.

The value of a semiconductor's diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic measurements. The accuracy of the thermographic temperature measurement of the diode case depends on the prevailing conditions. The temperature of the mold body (the black part of the diode case made of epoxy resin) depends on the place of measurement. The temperature of the place above the die is closer to the die temperature than the temperature of mold body fragments above the base plate. In addition, the difficulty of its thermographic temperature measurement increases when the surface whose temperature is being measured is in motion. Then, the temperature measured by thermography may not apply to the warmest point in the case where the die temperature is determined. Information about the difference between temperatures of the different parts of the mold body and the die may be important. For this reason, it was decided to check how much the temperature measurement error of the die diode changes if the temperature of the diode case is not measured at the point that is above the die.

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors.

While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration. We have studied the general performances of several devices, as a function of fluence, irradiated in different experimental conditions with different beams. A standard p-n junction silicon detector was also irradiated for comparison. The new detectors manifest excellent performance in terms of stability of the main parameters, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc. Experimental results evidence a radiation resistance of SiC devices more than two order of magnitude higher than Si devices. The new construction technology applied to silicon carbide material has made it possible to create very robust devices with excellent performance. These devices will soon be available for all those scientific projects where a high resistance to radiation damage is required.

A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K.

In this paper, we propose a temperature sensor based on a 4H-SiC CMOS oscillator circuit and that is able to operate in the temperature range between 298 K and 573 K. The circuit is developed on Fraunhofer IISB's 2 µm 4H-SiC CMOS technology and is designed for a bias voltage of 20 V and an oscillation frequency of 90 kHz at room temperature. The possibility to relate the absolute temperature with the oscillation frequency is due to the temperature dependency of the threshold voltage and of the channel mobility of the transistors. An analytical model of the frequency-temperature dependency has been developed and is used as a starting point for the design of the circuit. Once the circuit has been designed, numerical simulations are performed with the Verilog-A BSIM4SiC model, which has been opportunely tuned on Fraunhofer IISB's 2 µm 4H-SiC CMOS technology, and their results showed almost linear frequency-temperature characteristics with a coefficient of determination that was higher than 0.9681 for all of the bias conditions, whose maximum is 0.9992 at a VDD = 12.5 V. Moreover, we considered the effects of the fabrication process through a Monte Carlo analysis, where we varied the threshold voltage and the channel mobility with different values of the Gaussian distribution variance. For example, at VDD = 20 V, a deviation of 17.4% from the nominal characteristic is obtained for a Gaussian distribution variance of 20%. Finally, we applied the one-point calibration procedure, and temperature errors of +8.8 K and -5.8 K were observed at VDD = 15 V.

A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices.

With the growing adoption of wide bandgap devices in power electronic applications, current sensor design for switching current measurement has become more important. The demands for high accuracy, high bandwidth, low cost, compact size, and galvanic isolation pose significant design challenges. The conventional modeling approach for bandwidth analysis of current transformer sensors assumes that the magnetizing inductance remains constant, which does not always hold true in high-frequency operations. This can result in inaccurate bandwidth estimation and affect the overall performance of the current sensor. To address this limitation, this paper provides a comprehensive analysis of nonlinear modeling and bandwidth, considering the varying magnetizing inductance in a wide frequency range. A precise and straightforward arctangent-based fitting algorithm was proposed to accurately emulate the nonlinear feature, and the fitting results were compared with the magnetic core's datasheet to confirm its accuracy. This approach contributes to more accurate bandwidth prediction in field applications. In addition, the droop phenomenon of the current transformer and saturation effects are analyzed in detail. For high-voltage applications, different insulation methods are compared and an optimized insulation process is proposed. Finally, the design process is experimentally validated. The bandwidth of the proposed current transformer is around 100 MHz and the cost is around $20, making it a low-cost and high-bandwidth solution for switching current measurements in power electronic applications.

Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High Pressures.

Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure until now. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure with a slope of 25.1 MHz/GPa, which is almost two-times larger than that of nitrogen-vacancy centers in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of divacancy demonstrates that coherence time decreases as pressure increases. Based on these, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.

Tackling the Challenging Determination of Trace Elements in Ultrapure Silicon Carbide by LA-ICP-MS.

The goal of accurately quantifying trace elements in ultrapure silicon carbide (SiC) with a purity target of 5N (99.999% purity) was addressed. The unsuitability of microwave-assisted acid digestion followed by Inductively Coupled Plasma Mass Spectrometry (ICP-MS) analysis was proved to depend mainly on the contamination induced by memory effects of PTFE microwave vessels and by the purity levels of acids, even if highly pure ones were used in a clean environment. A new analytical protocol for the direct analysis of the solid material by laser ablation coupled with ICP-MS (LA-ICP-MS) was then exploited. Different samples were studied; the best results were obtained by embedding SiC (powders or grains) in epoxy resin. This technique has the great advantage of avoiding any source of external contamination, as grinding, pressing and sintering pretreatments are totally unnecessary. Two different laser wavelengths (266 and 193 nm) were tested, and best results were obtained with the 266 nm laser. The optimized protocol allows the determination of elements down to the sub-mg/kg level with a good accuracy level.

Highly Selective Photoelectroreduction of Carbon Dioxide to Ethanol over Graphene/Silicon Carbide Composites.

Using sunlight to produce valuable chemicals and fuels from carbon dioxide (CO2 ), i.e., artificial photosynthesis (AP) is a promising strategy to achieve solar energy storage and a negative carbon cycle. However, selective synthesis of C2 compounds with a high CO2 conversion rate remains challenging for current AP technologies. We performed CO2 photoelectroreduction over a graphene/silicon carbide (SiC) catalyst under simulated solar irradiation with ethanol (C2 H5 OH) selectivity of>99 % and a CO2 conversion rate of up to 17.1 mmol gcat -1 h-1 with sustained performance. Experimental and theoretical investigations indicated an optimal interfacial layer to facilitate the transfer of photogenerated electrons from the SiC substrate to the few-layer graphene overlayer, which also favored an efficient CO2 to C2 H5 OH conversion pathway.