Atomic and electronic origins of a type- C defect on Si(001)
Phys Rev Lett
; 84(18): 4128-31, 2000 May 01.
Article
en En
| MEDLINE
| ID: mdl-10990627
ABSTRACT
We present an extensive set of ab initio calculations for a type- C defect on Si(001). Various models belonging to subsurface defects are studied. A substitutional B in the second surface layer is predicted as a possible atomic origin of this defect. However, H and O coupled with second-layer vacancies and a substitutional C are not responsible for a type- C defect. We also discuss how the electronic structure of a type- C defect contributes to its specific scanning tunneling microscopy images.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Año:
2000
Tipo del documento:
Article
País de afiliación:
Japón