Metal to insulator transition in epitaxial graphene induced by molecular doping.
Phys Rev Lett
; 101(8): 086402, 2008 Aug 22.
Article
en En
| MEDLINE
| ID: mdl-18764644
ABSTRACT
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator, is one of the key challenges of modern electronics. By employing angle-resolved photoemission spectroscopy we find that a reversible metal to insulator transition and a fine-tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2008
Tipo del documento:
Article
País de afiliación:
Estados Unidos