Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer.
Nanotechnology
; 23(30): 305701, 2012 Aug 03.
Article
en En
| MEDLINE
| ID: mdl-22751205
ABSTRACT
Silicon nanowires (SiNWs) are promising building blocks for future electronic devices. In SiNW-based devices, reducing the contact resistance of SiNW-metal as much as possible is critically important. Here we report a simple fabrication approach for SiNW field effect transistors (FETs) with low contact resistances by employing a heavily doped carrier injection layer wrapped around SiNWs at the contact region. Both n- and p-type SiNW-FET devices with carrier injection layers were investigated, the contact resistances were one order smaller than those without carrier injection layers and only contribute less than 14.8% for n-type devices and 11.4% for p-type devices, respectively, to the total resistance. Such low contact resistance guarantees the device characteristics mainly from the channel region of SiNW-based devices.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2012
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Article