Your browser doesn't support javascript.
loading
Room-temperature photoconductivity far below the semiconductor bandgap.
Huang, Zhiming; Tong, Jinchao; Huang, Jingguo; Zhou, Wei; Wu, Jing; Gao, Yanqing; Lu, Jinxing; Lin, Tie; Wei, Yanfeng; Chu, Junhao.
Afiliación
  • Huang Z; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, PR China; Key laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, PR China.
Adv Mater ; 26(38): 6594-8, 2014 Oct.
Article en En | MEDLINE | ID: mdl-25178479
A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials.
Palabras clave

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2014 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2014 Tipo del documento: Article