Next generation device grade silicon-germanium on insulator.

Littlejohns, Callum G; Nedeljkovic, Milos; Mallinson, Christopher F; Watts, John F; Mashanovich, Goran Z; Reed, Graham T; Gardes, Frederic Y

Littlejohns, Callum G; Nedeljkovic, Milos; Mallinson, Christopher F; Watts, John F; Mashanovich, Goran Z; Reed, Graham T; Gardes, Frederic Y.

Afiliación

Littlejohns CG; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
Nedeljkovic M; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
Mallinson CF; The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
Watts JF; The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
Mashanovich GZ; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
Reed GT; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
Gardes FY; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.

Sci Rep ; 5: 8288, 2015 Feb 06.

Article en En | MEDLINE | ID: mdl-25656076

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2015 Tipo del documento: Article País de afiliación: Reino Unido

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