Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

Puchtler, Tim J; Woolf, Alexander; Zhu, Tongtong; Gachet, David; Hu, Evelyn L; Oliver, Rachel A

Puchtler, Tim J; Woolf, Alexander; Zhu, Tongtong; Gachet, David; Hu, Evelyn L; Oliver, Rachel A.

Afiliación

Puchtler TJ; Department of Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge, CB3 0FS, U.K.
Woolf A; School of Engineering and Applied Science, Harvard University , Cambridge, Massachusetts 02138, United States.
Zhu T; Department of Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge, CB3 0FS, U.K.
Gachet D; Attolight AG , EPFL Innovation Park - Bâtiment D, CH-1015 Lausanne, Switzerland.
Hu EL; School of Engineering and Applied Science, Harvard University , Cambridge, Massachusetts 02138, United States.
Oliver RA; Department of Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge, CB3 0FS, U.K.

ACS Photonics ; 2(1): 137-143, 2015 Jan 21.

Article en En | MEDLINE | ID: mdl-25839048

Palabras clave

cathodoluminescence; gan; microcavities; quality factor; threading dislocations

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: ACS Photonics Año: 2015 Tipo del documento: Article País de afiliación: Reino Unido

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