Dielectric functions of solution-processed GdAlO(x)/Si films measured with vacuum ultra-violet spectroscopic ellipsometry.

The dielectric functions of amorphous GdAlO(x) (GAO) films grown by the sol-gel process were investigated from 1.12 to 8.5 eV as a function of annealing temperature using spectroscopic ellipsometry (SE). A GAO precursor sol with a molar ratio of Gd:Al = 1:1 was prepared. Thin layers were formed by spin-coating on p-type Si substrates. The layers were sintered at 400 degrees C for 2 h in an ambient atmosphere, then rapid-thermal-annealed (RTA) at 700 or 800 degrees C for 1 min in an N2 ambient. The optical properties were measured via variable angle SE, at room temperature. The angle of incidence was varied from 50 to 70 degrees in 10 degrees steps. The dielectric functions of the resulting GAO films were obtained from the measured pseudodielectric functions by multilayer-structure calculations using the Tauc-Lorentz (TL) dispersion relation. The real and imaginary parts of the dielectric functions were found to increase with increasing RTA temperature. The film thicknesses and TL parameters (threshold energy E(g) and broadening C) decrease with increasing RTA temperature.