Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.

Tan, Haijie; Fan, Ye; Rong, Youmin; Porter, Ben; Lau, Chit Siong; Zhou, Yingqiu; He, Zhengyu; Wang, Shanshan; Bhaskaran, Harish; Warner, Jamie H

Tan, Haijie; Fan, Ye; Rong, Youmin; Porter, Ben; Lau, Chit Siong; Zhou, Yingqiu; He, Zhengyu; Wang, Shanshan; Bhaskaran, Harish; Warner, Jamie H.

Afiliación

Tan H; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Fan Y; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Rong Y; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Porter B; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Lau CS; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Zhou Y; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
He Z; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Wang S; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Bhaskaran H; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Warner JH; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.

ACS Appl Mater Interfaces ; 8(3): 1644-52, 2016 Jan 27.

Article en En | MEDLINE | ID: mdl-26756350

Palabras clave

2D crystals; WS2; graphene; heterostructures; surface transfer doping

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2016 Tipo del documento: Article País de afiliación: Reino Unido

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