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Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices.
Kang, Byoung-Ho; Lee, Jae-Sung; Lee, Sang-Won; Kim, Sae-Wan; Lee, Jun-Woo; Gopalan, Sai-Anand; Park, Ji-Sub; Kwon, Dae-Hyuk; Bae, Jin-Hyuk; Kim, Hak-Rin; Kang, Shin-Won.
Afiliación
  • Kang BH; Center for Functional Devices Fusion Platform, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Lee JS; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Lee SW; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Kim SW; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Lee JW; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Gopalan SA; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Park JS; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Kwon DH; Department of Electronic Engineering, Kyungil University, Buho-ri, Hayang-eup, 712-701 Gyeongsan-si, Republic of Korea.
  • Bae JH; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Kim HR; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
  • Kang SW; School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.
Sci Rep ; 6: 34659, 2016 Sep 30.
Article en En | MEDLINE | ID: mdl-27686147
We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br-) in cetyl trimethylammonium bromide (CTAB). The Br- ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article